PRETREATMENT AND POST-TREATMENT OF ELECTRODE SURFACES
A method and apparatus for fabricating electrodes used in energy storage devices are provided. In some implementations a surface of the electrode is activated for (a) a pre-treatment process to remove loosely held particles from the electrode surface; (b) a pre-treatment process to activate the surface of the electrode material for improved bonding or wetting for subsequently deposited materials; (c) a post-treatment of the pre-lithiation layer to improve subsequent bonding with additionally deposited layer, for example, passivation layers; and/or (d) a post-treatment of the pre-lithiation layer to improve/accelerate absorption of the lithium into the underlying electrode material.
1 . A method of forming a film stack for an energy storage device, comprising:
transferring a lithium metal film to a flexible substrate stack, the lithium metal film formed over a flexible polymer layer stack, the flexible polymer layer stack comprising a polymer substrate, the flexible substrate stack comprising an anode film; and
exposing portions of the lithium metal film to one or more lasers.
2 . The method of claim 1 , further comprising:
laminating the lithium metal film to the anode film.
3 . The method of claim 1 , wherein the flexible substrate stack further comprises a current collector.
4 . The method of claim 1 , wherein the polymer substrate is a continuous flexible substrate.
5 . The method of claim 1 , wherein exposing portions of the lithium metal film to one or more lasers is performed in a roll-to-roll tool.
6 . The method of claim 1 , further comprising exposing the lithium metal film to CO 2 gas to form a passivation layer.
7 . The method of claim 1 , further comprising exposing the lithium metal film to a fluorine-containing gas to form a passivation layer.
8 . The method of claim 1 , further comprising exposing the anode film to a surface treatment process selected from a corona treatment process, an atmospheric plasma treatment process, a low energy plasma treatment process, a plasma treatment process performed in a vacuum environment, or a combination thereof.
9 . The method of claim 1 , further comprising forming a surface protective film on the lithium metal film, the surface protective film is selected from a dielectric film, a metallic film, a chalcogenide film, an interleaf film, or a combination thereof.
10 . The method of claim 9 , wherein the surface protective film is the dielectric film and the dielectric film comprises titanium oxide, aluminum oxide, niobium oxide, tantalum oxide, zirconium oxide, or a combination thereof.
11 . The method of claim 9 , wherein the surface protective film is the metallic film and the metallic film is selected from tin, antimony, bismuth, gallium, germanium, copper, silver, gold, or a combination thereof.
12 . The method of claim 9 , wherein the surface protective film is the chalcogenide film and the chalcogenide film is selected from a copper chalcogenide film, a bismuth chalcogenide film, a tin chalcogenide film, a gallium chalcogenide film, a germanium chalcogenide film, an indium chalcogenide film, and a silver chalcogenide film.
13 . A film stack for an energy storage device, comprising:
a flexible polymer substrate; and
a film stack formed over the flexible polymer substrate, the film stack comprising:
a lithium metal film; and
a surface protective film selected from lithium fluoride, lithium carbonate, a dielectric film, a metallic film, a chalcogenide film, an interleaf film, or a combination thereof.
14 . The film stack of claim 13 , further comprising:
an anode film contacting the lithium metal film.
15 . The film stack of claim 14 , wherein the anode film comprises carbon, graphite, silicon, silicon oxide, silicon-containing graphite, nickel, copper, silver, tin, indium, gallium, bismuth, niobium, molybdenum, tungsten, chromium, titanium, lithium titanate, silicon, oxides thereof, composites thereof, or a combination thereof.
16 . The film stack of claim 14 , further comprising a current collector contacting the anode film.
17 . The film stack of claim 16 , wherein the surface protective film is the dielectric film and the dielectric film comprises titanium oxide, aluminum oxide, niobium oxide, tantalum oxide, zirconium oxide, or a combination thereof.
18 . The film stack of claim 16 , wherein the surface protective film is the metallic film and the metallic film is selected from tin, antimony, bismuth, gallium, germanium, copper, silver, gold, or a combination thereof.
19 . The film stack of claim 16 , wherein the surface protective film is the chalcogenide film and the chalcogenide film is selected from a copper chalcogenide film, a bismuth chalcogenide film, a tin chalcogenide film, a gallium chalcogenide film, a germanium chalcogenide film, an indium chalcogenide film, and a silver chalcogenide film.
20 . A non-transitory computer-readable medium storing instructions that, when executed by a processor, cause a computer system to perform the operations of:
transferring a lithium metal film to a flexible substrate stack, the lithium metal film formed over a flexible polymer layer stack, the flexible polymer layer stack comprising a polymer substrate, the flexible substrate stack comprising an anode film; and
exposing portions of the lithium metal film to one or more lasers.