SEMICONDUCTOR DEVICE
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.
1 . A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure; and
an active region between the first semiconductor structure and the second semiconductor structure; wherein the active region comprises a light-emitting region having N pair(s) of semiconductor stack(s), each of the semiconductor stack comprises a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1, wherein the well layer comprises a first group III-V semiconductor material comprising indium with a first percentage of indium content, the barrier layer comprises a second group III-V semiconductor material comprising indium with a second percentage of indium content, the first group III-V semiconductor material and the second group III-V semiconductor material further comprises phosphorus, and the second percentage of indium content is less than the first percentage of indium content.
2 . The semiconductor device of claim 1 , wherein the first percentage of indium content is greater than or equal to 55%.
3 . The semiconductor device of claim 1 , wherein a difference between the first percentage of indium content and the second percentage of indium content is greater than or equal to 10%.
4 . The semiconductor device of claim 1 , wherein the barrier layer has a first thickness, the well layer has a second thickness, and the first thickness is at least 2.5 times the second thickness.
5 . The semiconductor device of claim 1 , wherein N is less than or equal to 5.
6 . The semiconductor device of claim 1 , wherein the first group III-V semiconductor material and the second group III-V semiconductor material are the same.
7 . The semiconductor device of claim 6 , wherein the first group III-V semiconductor material and the second group III-V semiconductor material are quaternary group III-V semiconductor compound.
8 . The semiconductor device of claim 7 , wherein the first group III-V semiconductor material and the second group III-V semiconductor material are AlGaInP.
9 . The semiconductor device of claim 1 , wherein the barrier layer has a first thickness greater than or equal to 100 Å.
10 . The semiconductor device of claim 1 , wherein the well layer has a second thickness less than or equal to 50 Å.
11 . The semiconductor device of claim 1 , wherein the first semiconductor structure comprises a first semiconductor layer having a dopant concentration less than 3×10 18 cm −3 .
12 . The semiconductor device of claim 1 , further comprising a base located under the first semiconductor structure.
13 . The semiconductor device of claim 12 , wherein the well layer and the base are lattice-mismatched.
14 . The semiconductor device of claim 1 , wherein the first percentage of indium content is in a range of 55% to 85%, and the second percentage of indium content is in a range of 45% to 55%.
15 . The semiconductor device of claim 1 , wherein the first group III-V semiconductor material comprises gallium with a first percentage of gallium content, the second group III-V semiconductor material comprises gallium with a second percentage of gallium content greater than the first percentage of gallium content.
16 . The semiconductor device of claim 15 , wherein the first percentage of gallium content is greater than or equal to 25%.
17 . The semiconductor device of claim 1 , wherein the active region further comprises a first confinement layer and a second confinement layer, and the light-emitting region is located between the first confinement layer and the second confinement layer.
18 . The semiconductor device of claim 17 , wherein the first confinement layer has a third thickness which is at least 2 times the first thickness.
19 . The semiconductor device of claim 17 , wherein the active region further comprises an additional barrier layer located between the light-emitting region and the second confinement layer.
20 . The semiconductor device of claim 17 , wherein the first confinement layer comprising aluminum with a first percentage of aluminum content in a range of 75% to 100%.