SEMICONDUCTOR DEVICE
A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.
1 . A semiconductor device, comprising:
an epitaxial structure, comprising:
a first semiconductor structure comprising a first semiconductor contact layer;
a second semiconductor structure comprising a second semiconductor contact layer; and
an active region located between the first semiconductor structure and the second semiconductor structure;
a first contact electrode located on the second semiconductor contact layer and directly contacting the first semiconductor contact layer; and
a second contact electrode located on the second semiconductor contact layer and directly contacting the second semiconductor contact layer;
wherein the first semiconductor contact layer has a conductivity type of n-type and comprises a first group III-V semiconductor material, the second semiconductor contact layer has a conductivity type of p-type and comprises a second group III-V semiconductor material, and the second group III-V semiconductor material is an indium-containing phosphide.
2 . The semiconductor device of claim 1 , wherein the second group III-V semiconductor material has an indium content in a range of 1% to 30%.
3 . The semiconductor device of claim 1 , wherein the first group III-V semiconductor material and the second group III-V semiconductor material are different.
4 . The semiconductor device of claim 3 , wherein the first group III-V semiconductor material is a binary group III-V compound semiconductor, and the second group III-V semiconductor material is a ternary group III-V compound semiconductor.
5 . The semiconductor device of claim 4 , wherein the ternary group III-V compound semiconductor is In x Ga 1-x P, wherein 0<x<1.
6 . The semiconductor device of claim 5 , wherein x is in a range of 0.05 to 0.3.
7 . The semiconductor device of claim 4 , wherein the binary group III-V compound semiconductor is GaAs.
8 . The semiconductor device of claim 1 , wherein the first semiconductor contact layer has a first thickness, and the second semiconductor contact layer has a second thickness greater than the first thickness.
9 . The semiconductor device of claim 1 , wherein the active region comprises a first confinement layer, a second confinement layer and a light-emitting region located between the first confinement layer and the second confinement layer.
10 . The semiconductor device of claim 1 , wherein the first semiconductor contact layer or the second semiconductor contact layer has a first side away from the active region and a second side closer to the active region than the first side, and a dopant concentration on the first side is higher than that on the second side.
11 . A semiconductor device, comprising:
an epitaxial structure, comprising:
a first semiconductor structure comprising a first semiconductor contact layer;
a second semiconductor structure comprising a second semiconductor contact layer; and
an active region located between the first semiconductor structure and the second semiconductor structure;
a first contact electrode located on the first semiconductor contact layer and directly contacting the first semiconductor contact layer; and
a second contact electrode located on the first semiconductor contact layer and directly contacting the second semiconductor contact layer;
wherein the first semiconductor contact layer has a conductivity type of n-type and comprises a first group III-V semiconductor material, the second semiconductor contact layer has a conductivity type of p-type and comprises a second group III-V semiconductor material, the first group III-V semiconductor material is an indium-containing phosphide and is a ternary group III-V compound semiconductor.
12 . The semiconductor device of claim 11 , wherein the first semiconductor contact layer has a plurality of pairs of first sublayers and second sublayers which are alternately stacked, each of the first sublayers comprises the first group III-V semiconductor material, and each of the second sublayers comprises a third group III-V semiconductor material different from the first group III-V semiconductor material.
13 . The semiconductor device of claim 12 , wherein the first semiconductor contact layer comprises 2 pairs to 500 pairs of the first sublayers and the second sublayers.
14 . The semiconductor device of claim 11 , wherein the first group III-V semiconductor material is Al y In 1-y P, wherein 0<y<1.
15 . The semiconductor device of claim 11 , wherein the second group III-V semiconductor material is a binary group III-V compound semiconductor.
16 . The semiconductor device of claim 15 , wherein the binary group III-V compound semiconductor is GaP.
17 . The semiconductor device of claim 11 , wherein the first semiconductor contact layer has a first thickness, the second semiconductor contact layer has a second thickness less than the first thickness.
18 . The semiconductor device of claim 12 , wherein the third group III-V semiconductor material is an indium-containing phosphide.
19 . The semiconductor device of claim 11 , wherein the first semiconductor contact layer or the second semiconductor contact layer has a first side away from the active region and a second side closer to the active region than the first side, and a dopant concentration on the first side is higher than that on the second side.
20 . The semiconductor device of claim 17 , wherein the first thickness and the second thickness are respectively in a range of 300 Å to 30000 Å.