DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a first lower electrode and a second lower electrode separated from each other, a first common layer disposed on the first lower electrode and the second lower electrode, a first light emitting layer disposed on the first common layer and overlapping the first lower electrode in plan view, a second light emitting layer disposed on the first common layer and overlapping the second lower electrode in plan view, a barrier layer disposed on the first common layer between the first light emitting layer and the second light emitting layer, a second common layer disposed on the first light emitting layer, the second light emitting layer, and the barrier layer, and an upper electrode disposed on the second common layer.
1 . A display device comprising:
a substrate;
an insulating layer disposed above the substrate;
a first lower electrode and a second lower electrode disposed on the insulating layer and separated from each other;
a first common layer disposed on the first lower electrode and the second lower electrode;
a first light emitting layer disposed on the first common layer and overlapping the first lower electrode in plan view;
a second light emitting layer disposed on the first common layer, overlapping the second lower electrode in plan view, separated from the first light emitting layer, and formed of a material different from that of the first light emitting layer;
a barrier layer disposed on the first common layer between the first light emitting layer and the second light emitting layer and surrounding each of the first light emitting layer and the second light emitting layer in plan view;
a second common layer disposed on the first light emitting layer, the second light emitting layer, and the barrier layer; and
an upper electrode disposed on the second common layer.
2 . The display device of claim 1 , wherein
the barrier layer is formed of a material containing quantum dots.
3 . The display device of claim 2 , wherein
the barrier layer is formed of a material containing an indirect transition material.
4 . The display device of claim 3 , wherein
the indirect transition material contains silicon.
5 . The display device of claim 4 , wherein
a hole injection barrier of the barrier layer is larger than a hole injection barrier of each of the first light emitting layer and the second light emitting layer.
6 . The display device of claim 1 , wherein
a thickness of the barrier layer is equal to a thickness of each of the first light emitting layer and the second light emitting layer.
7 . The display device of claim 1 , wherein
the first common layer includes a hole injection layer, a hole transport layer, and an electron blocking layer, and
the second common layer includes a hole blocking layer, an electron transport layer, and an electron injection layer.
8 . The display device of claim 1 , further comprising:
a rib disposed on the insulating layer and including a first aperture overlapping the first lower electrode and a second aperture overlapping the second lower electrode in plan view,
wherein
the first common layer is disposed on the rib, and
the barrier layer is located directly above the rib.
9 . The display device of claim 8 , wherein
in plan view, an area of the first aperture is different from an area of the second aperture.
10 . The display device of claim 8 , wherein
the first light emitting layer is formed of a material which emits red or green light, and
the second light emitting layer is formed of a material which emits blue light.
11 . The display device of claim 1 , wherein
the first light emitting layer and the second light emitting layer are formed of a material containing quantum dots.
12 . The display device of claim 11 , wherein
the first common layer is in contact with the insulating layer at a position overlapping the barrier layer.
13 . A method of manufacturing a display device, comprising:
forming an insulating layer above a substrate;
forming a first lower electrode and a second lower electrode separated from each other, on the insulating layer;
forming a rib including a first aperture overlapping the first lower electrode and a second aperture overlapping the second lower electrode in plan view, on the insulating layer;
forming a first common layer over the first lower electrode, the second lower electrode, and the rib;
forming a first light emitting layer overlapping the first lower electrode in plan view, on the first common layer;
forming a second light emitting layer overlapping the second lower electrode in plan view, separated from the first light emitting layer, and made of a material different from that of the first light emitting layer, on the first common layer;
forming a barrier layer located on the first common layer between the first light emitting layer and the second light emitting layer and surrounding each of the first light emitting layer and the second light emitting layer in plan view;
forming a second common layer over the first light emitting layer, the second light emitting layer, and the barrier layer; and
forming an upper electrode on the second common layer.
14 . The method of claim 13 , wherein
the barrier layer is formed of a material containing quantum dots.
15 . The method of claim 14 , wherein
the barrier layer is formed of a material containing an indirect transition material.
16 . The method of claim 15 , wherein
the indirect transition material contains silicon.
17 . The method of claim 16 , wherein
a hole injection barrier of the barrier layer is larger than a hole injection barrier of each of the first light emitting layer and the second light emitting layer.
18 . The method of claim 13 , wherein
the first common layer includes a hole injection layer, a hole transport layer, and an electron blocking layer, and
the second common layer includes a hole blocking layer, an electron transport layer, and an electron injection layer.
19 . The method of claim 13 , wherein
the first light emitting layer is formed of a material which emits red or green light, and
the second light emitting layer is formed of a material which emits blue light.
20 . The method of claim 13 , wherein
the forming the barrier layer further comprising:
forming the barrier layer over the first light emitting layer, the second light emitting layer, and the first common layer;
forming a resist overlapping the barrier layer between the first light emitting layer and the second light emitting layer; and
removing the barrier layer exposed from the resist by etching using the resist as a mask.