RADIATION DETECTION APPARATUS HAVING A STABILIZED PHOTOMULTIPLIER
Apparatuses and methods as described herein can be used to help stabilize the gain of a semiconductor-based photomultiplier. In an embodiment, an apparatus can include a semiconductor-based photomultiplier. The apparatus can be configured to maintain a constant voltage output of between +/−0.002% and +/−15% of a breakdown voltage. A method for stabilizing a radiation detection device can include determining a breakdown voltage of a light source. The light source can be optically coupled to a silicon photomultiplier. The method can also include measuring a plurality of light outputs of the light source provided over a temperature range of 70 degrees and generating an individualized look-up table for the light source based on the measured plurality of light outputs over the said temperature range.
1 . An apparatus comprising a semiconductor-based photomultiplier, the apparatus maintaining a constant centroid shift at zero over a temperature range of 75° C.
2 . The apparatus of claim 1 , wherein the apparatus maintains a constant channel per energy output over temperature range of 75° C.
3 . The apparatus of claim 1 , wherein the apparatus maintains a characteristic peak of interest (POI) as measured by channel analyzer over a temperature range of 75° C.
4 . The apparatus of claim 1 , wherein the apparatus maintains a bias voltage so that the energy output is less than +/−5% of a breakdown voltage.
5 . The apparatus of claim 1 , wherein maintaining the constant voltage is performed at any temperature range between −20° C. and +55° C.
6 . The apparatus of claim 1 , wherein the apparatus further comprises a scintillation crystal.
7 . The apparatus of claim 1 , wherein the apparatus further comprises a pulse injector circuit configured to inject a first input pulse into the semiconductor-based photomultiplier during initial operation of the apparatus.
8 . The apparatus of claim 6 , wherein the apparatus further comprises a memory containing an individualized look-up table of gain stabilization for the specific scintillation crystal provided.
9 . A method for stabilizing a radiation detection device, comprising:
determining a breakdown voltage of a light source, wherein the light source is optically coupled to a silicon photomultiplier;
measuring a plurality of light outputs of the light source provided over a temperature range of 75 degrees; and
generating an individualized look-up table for the light source based on the measured plurality of light outputs over the said temperature range.
10 . The method of claim 9 , further comprising maintaining a constant voltage output of between +/−0.002% and +/−3% of the determined breakdown voltage of the light source.
11 . The method of claim 9 , further comprising injecting an input pulse into the silicon photomultiplier.
12 . The method of claim 11 , further comprising receiving an output pulse from the silicon photomultiplier.
13 . The method of claim 12 , further comprising generating a gain value based at least in part on the output pulse of the light source provided over a temperature range of 70 degrees.
14 . The method of claim 13 , wherein the temperature range is between −20° C. and +55° C.
15 . The method of claim 13 , further comprising generating a look-up table with the gain value for each degree over the temperature range.
16 . The method of claim 15 , further comprising maintaining a constant voltage output of +/−1% of the determined breakdown voltage of the light source based on the generated look-up table.
17 . The method of claim 9 , wherein the light source is a luminescent material optically coupled to the semiconductor-based photomultiplier.
18 . The method of claim 17 , wherein the apparatus further comprises a temperature sensor adjacent to an interface between the luminescent material and the semiconductor-based photomultiplier.
19 . A method for stabilizing a radiation detection device, comprising:
injecting a first input pulse into the semiconductor-based photomultiplier;
determining a breakdown voltage of a luminescent material, wherein the luminescent material is optically coupled to a silicon photomultiplier provided;
measuring a plurality of light outputs of the scintillator provided over a temperature range of 75 degrees; and
generating an individualized look-up table for the scintillator based on the measured plurality of light outputs over the said temperature range.
20 . The method of claim 19 , further comprising receiving an output pulse from the silicon photomultiplier over the temperature range of between −20° C. and +55° C.