TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH TWO-LAYER ELECTRODES
There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers comprise a first layer adjacent the diaphragm and a second layer over the first layer opposite the diaphragm.
1 . An acoustic resonator comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) having interleaved fingers on a surface of the piezoelectric layer, the interleaved fingers consisting of a first layer that directly contacts the piezoelectric layer, and a second layer on the first layer,
wherein the first layer comprises a different metal than the second layer, and the first layer has a thickness that is less than a thickness of the second layer, and
wherein the thicknesses of the first and second layers are measured in a direction on which the piezoelectric layer, the first layer and the second layer are stacked.
2 . The acoustic resonator of claim 1 , wherein a transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer.
3 . The acoustic resonator of claim 1 , wherein the thicknesses of the first and second layers are measured in a direction orthogonal to the surface of the piezoelectric layer.
4 . The acoustic resonator of claim 1 , further comprising:
a substrate having a surface,
wherein the piezoelectric layer is attached to the surface of the substrate via one or more intermediate layers and has a portion that forms a diaphragm over a cavity, and
wherein the interleaved fingers of the IDT are on the diaphragm of the piezoelectric layer.
5 . The acoustic resonator of claim 1 , wherein the IDT is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, with the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also transverse to a direction of an electric field created by the interleaved fingers.
6 . The acoustic resonator of claim 1 , wherein the thickness of the first layer is less than one-half of an acoustic wavelength within the first layer at a resonance frequency, and the thickness of the second layer is less than one-half of an acoustic wavelength within the second layer at the resonance frequency.
7 . The acoustic resonator of claim 1 , wherein the thickness of the first layer is in a range from 25% to 75% of a thickness of the piezoelectric layer, and wherein the thickness of the second layer is in a range from 25% to 75% of the thickness of the piezoelectric layer.
8 . The acoustic resonator of claim 1 , wherein the first layer comprises aluminum or titanium.
9 . The acoustic resonator of claim 1 , wherein the second layer comprises chromium or tungsten.
10 . The acoustic resonator of claim 1 , wherein the second layer has a sidewall that tapers inward as the second layer extends away from the piezoelectric layer at a range between approximately 70 and 80 degrees.
11 . A filter device comprising:
a plurality of bulk acoustic wave resonators that each comprise:
a piezoelectric layer; and
an interdigital transducer (IDT) having interleaved fingers on a surface of the piezoelectric layer, the interleaved fingers consisting of a first layer that directly contacts the piezoelectric layer, and a second layer on the first layer,
wherein the first layer comprises a different metal than the second layer, and the first layer has a thickness that is less than a thickness of the second layer, and
wherein the thicknesses of the first and second layers are measured in a direction on which the piezoelectric layer, the first layer and the second layer are stacked.
12 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, a transverse acoustic impedance of the second layer is higher than a transverse acoustic impedance of the first layer.
13 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the thicknesses of the first and second layers are measured in a direction orthogonal to the surface of the piezoelectric layer.
14 . The filter device of claim 1 , wherein each of the bulk acoustic wave resonators further comprises:
a substrate having a surface,
wherein the piezoelectric layer is attached to the surface of the substrate via one or more intermediate layers and has a portion that forms a diaphragm over a cavity, and
wherein the interleaved fingers of the IDT are on the diaphragm of the piezoelectric layer.
15 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the IDT is configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, with the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also transverse to a direction of an electric field created by the interleaved fingers.
16 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the thickness of the first layer is less than one-half of an acoustic wavelength within the first layer at a resonance frequency, and the thickness of the second layer is less than one-half of an acoustic wavelength within the second layer at the resonance frequency.
17 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the thickness of the first layer is in a range from 25% to 75% of a thickness of the piezoelectric layer, and wherein the thickness of the second layer is in a range from 25% to 75% of the thickness of the piezoelectric layer.
18 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the first layer comprises aluminum or titanium.
19 . The filter device of claim 11 , wherein, for each of the bulk acoustic wave resonators, the second layer comprises chromium or tungsten.
20 . The filter device of claim 1 , wherein, for each of the bulk acoustic wave resonators, the second layer has a sidewall that tapers inward as the second layer extends away from the piezoelectric layer at a range between approximately 70 and 80 degrees.