SLICING MICRO-LED WAFER AND SLICING MICRO-LED CHIP
A slicing micro-light emitting diode (LED) wafer includes a driver circuit substrate, a plurality of micro-LEDs formed on the driver circuit substrate, the plurality of micro-LEDs being made from a plurality of epitaxial layer slices arranged side-by-side on the driver circuit substrate, and a bonding layer, formed at bottoms of the plurality of epitaxial layer slices and on a top surface of the driver circuit substrate, for bonding the micro-LEDs and the driver circuit substrate.
1 - 19 . (canceled)
20 . A micro-light emitting diode (LED) structure, comprising:
a substrate;
at least one micro-LED formed above the substrate, wherein the at least one micro-LED comprises:
a bottom metal layer formed above the substrate;
a light emitting layer formed above the bottom metal layer;
an insulating layer covering the light emitting layer and the bottom metal layer and including an opening exposing a portion of the light emitting layer;
a transparent conductive layer covering the insulating layer and electrically contacting the light emitting layer via the opening of the insulating layer.
21 . The micro-LED structure of claim 20 , further comprising:
a micro-lens formed above the micro-LED, and vertically aligned with the micro-LED.
22 . The micro-LED structure of claim 21 , further comprising:
a transparent conductive layer formed between the micro-lens and the micro-LED.
23 . The micro-LED structure of claim 20 , wherein a profile of the light emitting layer vertically projected on a top surface of the substrate is surrounded by a profile of the bottom metal layer vertically projected on the top surface of the substrate.
24 . The micro-LED structure of claim 20 , comprising:
a plurality of the micro-LEDs formed above the substrate.
25 . The micro-LED structure of claim 24 , comprising:
a light-isolating wall formed between adjacent micro-LEDs.
26 . The micro-LED structure of claim 25 , wherein a height of the light-isolating wall is greater than or equal to a height of the adjacent micro-LEDs.
27 . The micro-LED structure of claim 24 , wherein the plurality of the micro-LEDs are configured to emit light having the same color.
28 . The micro-LED structure of claim 24 , wherein the plurality of the micro-LEDs are configured to emit light having different colors.
29 . The micro-LED structure of claim 24 ,
wherein the plurality of the micro-LEDs are arranged in an array.
30 . The micro-LED structure of claim 24 , wherein each one of the plurality of the micro-LEDs is a red LED, a greed LED, or a blue LED.
31 . The micro-LED structure of claim 24 , wherein a pixel is formed by an array of the plurality of the micro-LEDs.
32 . The micro-LED structure of claim 24 , wherein a pixel is formed by one of the plurality of the micro-LEDs.
33 . The micro-LED structure of claim 24 , wherein a space between adjacent micro-LEDs is greater than 300 μm.
34 . The micro-LED structure of claim 24 , wherein thicknesses of the light emitting layers in the plurality of the micro-LEDs are the same.
35 . The micro-LED structure of claim 20 , wherein the light emitting layer comprises an opto-electronic device epi-structure layer.
36 . The micro-LED structure of claim 20 , wherein the light emitting layer comprises an LED epi-structure layer.
37 . The micro-LED structure of claim 20 , wherein the light emitting layer comprises an LED epi-structure layer.
38 . The micro-LED structure of claim 20 , wherein the light emitting layer comprises a vertical cavity surface emitting laser (VCSEL) epi-structure layer.
39 . The micro-LED structure of claim 20 , wherein the light emitting layer comprises a photodetector epi-structure layer.
40 . The micro-LED structure of claim 20 , wherein the insulating layer is formed at least on the sidewall surface of the light emitting layer.
41 . The micro-LED structure of claim 40 , wherein the insulating layer is further formed on the sidewall surface of the bottom metal layer.
42 . The micro-LED structure of claim 41 , wherein the insulating layer is further formed on the substrate at a side of the bottom metal layer.
43 . The micro-LED structure of claim 20 , wherein the substrate includes a driver circuit configured to drive the at least one micro-LED.
44 . The micro-LED structure of claim 43 , wherein the driver circuit is configured to separately drive each single micro-LED.
45 . The micro-LED structure of claim 20 , wherein the bottom metal layer includes a bonding material sublayer formed of Sn, Au, Ni, Pd, or Cu, or an alloy or a stack thereof.
46 . The micro-LED structure of claim 20 , wherein the bottom metal layer further comprises a reflective structure.
47 . The micro-LED structure of claim 20 , wherein the bottom metal layer further comprises an adhesion sublayer formed between the bonding material layer and the light emitting layer.
48 . The micro-LED structure of claim 20 , wherein the bottom metal layer further comprises a bonding diffusion barrier sublayer formed between the bonding material layer and the light emitting layer.
49 . The micro-LED structure of claim 20 , wherein the light emitting layer is an epitaxial layer epitaxially grown on a growth substrate.