DETECTION DEVICE

1 . A detection device comprising:

a substrate; and

a plurality of photodiodes arranged on the substrate, wherein

each of the photodiodes includes a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode that are stacked on the substrate in the order as listed, and

a plurality of the lower electrodes are each provided with a plurality of openings.

2 . The detection device according to claim 1 , wherein

the lower buffer layer includes either a hole transport layer or an electron transport layer, and

the upper buffer layer includes the other of the hole transport layer and the electron transport layer.

3 . The detection device according to claim 1 , wherein the lower buffer layer has sheet resistance of equal to or larger than 1×10 10 Ω/sq. and not larger than 1×10 13 Ω/sq.

4 . The detection device according to claim 1 , wherein the openings of the lower electrode are arranged in a first direction and are each formed in a slit shape extending in a second direction intersecting the first direction.

5 . The detection device according to claim 1 , wherein the openings of the lower electrode are arranged in a matrix having a row-column configuration.

6 . The detection device according to claim 1 , wherein the openings of the lower electrode are each formed in a slit shape and extend at a predetermined angle with respect to an arrangement direction of the photodiodes.

7 . The detection device according to claim 6 , comprising power supply wiring line coupled to the lower electrode, wherein

the openings radially extend from a contact between the power supply wiring line and the lower electrode.