MICRO LED AND MICRO LED DISPLAY PANEL

1 . A micro LED comprising:

a bonding layer;

an N type semiconductor layer formed on the bonding layer;

a light emitting layer formed on the N type semiconductor layer;

a P type semiconductor layer formed on the light emitting layer; and

a top conductive layer formed on the P type semiconductor layer;

wherein the bonding layer comprises:

a first metal bonding layer;

a second metal bonding layer bonded with the N type semiconductor layer; and

a transparent bonding layer formed between the first metal bonding layer and the second metal bonding layer; wherein the second metal bonding layer is semi-transparent.

2 . The micro LED according to claim 1 , wherein material of the second metal bonding layer is AuGe.

3 . The micro LED according to claim 1 , wherein a thickness of the second metal bonding layer is less than a thickness of the transparent bonding layer.

4 . The micro LED according to claim 3 , wherein the thickness of the second metal bonding layer is less than one hundredth of the thickness of the transparent bonding layer.

5 . The micro LED according to claim 4 , wherein the thickness of the second metal bonding layer is greater than one three-hundredth of the thickness of the transparent bonding layer.

6 . The micro LED according to claim 1 , wherein an inclined angle of a sidewall of the P type semiconductor layer, the light emitting layer, and the N type semiconductor layer is greater than 85 degrees.

7 . The micro LED according to claim 1 , wherein a thickness of the transparent bonding layer is one fourth of a wavelength of light emitted by the light emitting layer.

8 . The micro LED according to claim 1 , wherein the N type semiconductor layer further comprises:

a doped N type contact layer formed on the bonding layer; and

an N type cladding layer formed on the doped N type contact layer, wherein the N type cladding layer comprises a distributed Bragg reflection (DBR) structure.

9 . The micro LED according to claim 8 , wherein the DBR structure comprises a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers being alternately layered.

10 . The micro LED according to claim 9 , wherein materials of the plurality of first layers and the plurality of second layers are AlInP and AlGaInP, respectively, or AlGaAs and AlAs, respectively.

11 . A micro LED display panel comprises:

an integrated circuit (IC) backplane comprising a bottom pad array, the bottom pad array comprising a plurality of conductive bottom pads; and

a micro LED array formed on the IC backplane, the micro LED array comprising a plurality of micro LEDs;

wherein one micro LED of the plurality of micro LEDs is electrically connected with one bottom pad of the plurality of conductive bottom pads; and the micro LED comprises:

a bonding layer;

an N type semiconductor layer formed on the bonding layer;

a light emitting layer formed on the N type semiconductor layer;

a P type semiconductor layer formed on the light emitting layer; and

a top conductive layer formed on the P type semiconductor layer;

wherein the bonding layer comprises:

a first metal bonding layer;

a second metal bonding layer bonded with the N type semiconductor layer; and

a transparent bonding layer formed between the first metal bonding layer and the second metal bonding layer; wherein the second metal bonding layer is semi-transparent.

12 . The micro LED display panel according to claim 11 , wherein respective top conductive layers of the plurality of micro LEDs are interconnected.

13 . The micro LED display panel according to claim 12 , wherein the IC backplane further comprises a top connected pad, and the respective top conductive layers are connected with the top connected pad of the IC backplane.