MICRO LED AND MICRO LED DISPLAY PANEL
A micro LED includes a bonding layer; an N type semiconductor layer formed on the bonding layer; a light emitting layer formed on the N type semiconductor layer; and a P type semiconductor layer formed on the light emitting layer. A resonance cavity structure is formed by the N type semiconductor layer and the P type semiconductor layer.
1 . A micro LED comprising:
a bonding layer;
an N type semiconductor layer formed on the bonding layer,
a light emitting layer formed on the N type semiconductor layer; and
a P type semiconductor layer formed on the light emitting layer;
wherein a resonance cavity structure is formed by the N type semiconductor layer and the P type semiconductor layer.
2 . The micro LED according to claim 1 , wherein the N type semiconductor layer comprises an N type cladding layer, the P type semiconductor layer comprises a P type cladding layer, the N type cladding layer comprises a first distributed Bragg reflection (DBR) structure and the P type cladding layer comprises a second DBR structure.
3 . The micro LED according to claim 2 , wherein a phase adjust region is formed by the N type cladding layer and the P type cladding layer.
4 . The micro LED according to claim 3 , wherein the N type cladding layer further comprises a first part, and the first DBR structure is formed under the first part; the P type cladding layer further comprises a second part, and the second DBR structure is formed on the second part; and the first part and the second part form the phase adjust region.
5 . The micro LED according to claim 4 , wherein the N type cladding layer and the P type cladding layer form the resonance cavity structure.
6 . The micro LED according to claim 3 , wherein the first DBR structure comprises a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers being alternately layered; and the second DBR structure comprises a plurality of third layers and a plurality of fourth layers, the plurality of third layers and the plurality of fourth layers being alternately layered.
7 . The micro LED according to claim 6 , wherein materials of the plurality of first layers and the plurality of second layers are AlInP and AlGaInP, respectively, or AlGaAs and AlAs, respectively; and materials of the plurality of third layers and the plurality of fourth layers are AlInP and AlGaInP, respectively, or AlGaAs and AlAs, respectively.
8 . The micro LED according to claim 1 , wherein the bonding layer comprises:
a first metal bonding layer;
a second metal bonding layer bonded with the N type semiconductor layer; and
a transparent bonding layer formed between the first metal bonding layer and the second metal bonding layer;
wherein a thickness of the transparent bonding layer is one fourth of a wavelength of light emitted by the light emitting layer.
9 . The micro LED according to claim 8 , wherein the second metal bonding layer is semi-transparent.
10 . The micro LED according to claim 8 , wherein material of the second metal bonding layer is AuGe.
11 . The micro LED according to claim 8 , wherein a thickness of the second metal bonding layer is less than a thickness of the transparent bonding layer.
12 . The micro LED according to claim 1 , wherein an inclined angle of a sidewall of the P type semiconductor layer, the light emitting layer, and the N type semiconductor layer is greater than 85 degrees.
13 . A micro LED display panel comprising:
an integrated circuit (IC) backplane comprising a bottom pad array, the bottom pad array comprising a plurality of conductive bottom pads; and
a micro LED array formed on the IC backplane, the micro LED array comprising a plurality of micro LEDs;
wherein one micro LED of the plurality of micro LEDs is electrically connected with one bottom pad of the plurality of conductive bottom pads; and the micro LED comprises:
a bonding layer;
an N type semiconductor layer formed on the bonding layer,
a light emitting layer formed on the N type semiconductor layer; and
a P type semiconductor layer formed on the light emitting layer;
wherein a resonance cavity structure is formed by the N type semiconductor layer and the P type semiconductor layer.
14 . The micro LED display panel according to claim 13 , wherein respective top conductive layers of the plurality of micro LEDs are interconnected.
15 . The micro LED display panel according to claim 14 , wherein the IC backplane further comprises a top connected pad, and the respectively top conductive layers are connected with the top connected pad of the IC backplane.