COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.
1 . A method for depositing a film selected from a silicon oxide and a carbon doped silicon oxide film using flowable chemical vapor deposition, the method comprising:
placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from about −20° C. to about 400° C. and a pressure of the reactor is maintained at 100 torr or less;
introducing at least one compound selected from the group consisting of Formulae I or II below:
wherein R is selected from a branched C 4 to C 10 alkyl group and R 1 , R 2 , R 3 , R 4 are each independently selected from a hydrogen atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, an electron withdrawing group, a C 3 to C 10 cyclic alkyl group, and a halide atom and wherein the at least one compound forms a species that covers at least a portion of the surface feature; and
treating the species with an oxygen source at one or more temperatures ranging from about 500° C. to about 1000° C. to form the film on at least a portion of the surface feature.
2 . The method of claim 1 , wherein the oxygen source is selected from the group consisting of water (H 2 O), oxygen (O 2 ), oxygen plasma, ozone (O 3 ), NO, N 2 O, carbon monoxide (CO), carbon dioxide (CO 2 ), N 2 O plasma, carbon monoxide (CO) plasma, carbon dioxide (CO 2 ) plasma, and combinations thereof.
3 . The method of claim 1 , wherein the plasma source is generated in situ.
4 . The method of claim 1 , wherein the plasma source is generated remotely.
5 . The method of claim 1 , wherein the film has a wet etch rate and the wet etch rate is less than 2.2 times that of a thermal oxide film in a 100:1 dilute HF solution.
6 . The method of claim 1 , further comprising: treating the film with at least one selected from plasma, ultraviolet light, infrared light, or combinations thereof.
7 . A method for depositing a silicon-containing film using flowable chemical vapor deposition, the method comprising:
placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from about −20° C. to about 400° C. and a pressure of the reactor is maintained at 100 torr or less;
introducing at least one compound selected from the group consisting of Formulae I or II below:
wherein R is selected from a branched C 4 to C 10 alkyl group and R 1 , R 2 , R 3 , R 4 are each independently selected from a hydrogen atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, an electron withdrawing group, a C 3 to C 10 cyclic alkyl group, and a halide atom and wherein the at least one compound forms a species that covers at least a portion of the surface feature; and
treating the species with a plasma source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the film on at least a portion of the surface feature.
8 . The method of claim 7 , wherein the plasma source is selected from the group consisting of a nitrogen plasma; plasma comprising nitrogen and helium; a plasma comprising nitrogen and argon; an ammonia plasma; a plasma comprising ammonia and helium; a plasma comprising ammonia and argon; helium plasma; argon plasma; hydrogen plasma; a plasma comprising hydrogen and helium; a plasma comprising hydrogen and argon; a plasma comprising ammonia and hydrogen; an organic amine plasma; and mixtures thereof.
9 . The method of claim 7 , wherein the silicon-containing film is selected from the group consisting of silicon nitride, carbon doped silicon nitride, silicon oxynitride, and carbon doped silicon oxynitride film.
10 . The silicon-containing film formed by the method of claim 7 , wherein the silicon-containing film has no voids in or on the surface feature.
11 . The method of claim 7 , wherein the plasma source is generated in situ.
12 . The method of claim 7 , wherein the plasma source is generated remotely.
13 . The method of claim 7 , wherein the silicon-containing film has a wet etch rate and the wet etch rate is less than 2.2 times that of a thermal oxide film in a 100:1 dilute HF solution.
14 . The method of claim 7 , further comprising: treating the film with at least one selected from plasma, ultraviolet light, infrared light, or combinations thereof.