SEMICONDUCTOR NANOPARTICLE, PRODCUTION METHOD THEREOF, ELECTRONIC DEVICE INCLUDING THE SAME
A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light, wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9: Relative mole value of zinc = [ Zn ] / ( [ Ag ] + [ In ] + [ Ga ] + [ Zn ] ) Equation 1 wherein, in Equation 1, [Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and wherein a mole ratio of gallium to indium is greater than about 2.5:1 and less than about 5.6:1.
1 . A semiconductor nanoparticle comprises silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light,
wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9:
Relative
mole
value
of
zinc
=
[
Zn
]
/
(
[
Ag
]
+
[
In
]
+
[
Ga
]
+
[
Zn
]
)
Equation
1
wherein, in Equation 1,
[Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and
wherein a mole ratio of gallium to indium in the semiconductor nanoparticle is greater than about 2.5:1 and less than about 5.6:1.
2 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle has a charge balance value defined by Equation 2 that is greater than or equal to about 0.91 and less than or equal to about 1.2:
charge
balance
value
=
{
[
Ag
]
+
3
(
[
In
]
+
[
Ga
]
)
+
2
[
Zn
]
}
/
2
[
S
]
Equation
2
wherein, in Equation 2, [Ag], [In], [Ga], [Zn], and [S] are molar amounts of silver, indium, gallium, zinc, and sulfur in the semiconductor nanoparticle, respectively.
3 . The semiconductor nanoparticle of claim 2 , wherein
the charge balance value is greater than or equal to about 0.93 and less than or equal to about 1.17.
4 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
the relative mole value of zinc is greater than or equal to about 0.28 and less than or equal to about 0.66, and
a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 2.9:1 and less than or equal to about 4.5:1.
5 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of zinc to indium (Zn:In) is greater than or equal to about 2.7:1 and less than or equal to about 10.5:1, and
a mole ratio of gallium to silver (Ga:Ag) is greater than or equal to about 1.1:1 and less than or equal to about 3:1.
6 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of gallium to a sum of gallium, indium, and silver (Ga:(Ga+In+Ag)) is greater than or equal to about 0.45:1 and less than or equal to about 0.7:1,
a mole ratio of zinc to sulfur (Zn:S) is greater than or equal to about 0.1:1 and less than or equal to about 0.8:1, or
a mole ratio of a sum of indium and gallium to sulfur ((In+Ga):S) is greater than or equal to about 0.1:1 and less than or equal to about 0.8:1.
7 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of silver to a sum of silver, indium, and gallium (Ag:(Ag+In+Ga)) is greater than or equal to about 0.2:1 and less than or equal to about 0.5:1, or
a mole ratio of sulfur to a sum of silver, indium, and gallium (S/(Ag+In+Ga)) is greater than or equal to about 1:1 and less than or equal to about 2.5:1.
8 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle comprises a first particle comprising silver, indium, gallium, and sulfur, and a semiconductor nanocrystal layer disposed on the first particle and comprising zinc and sulfur.
9 . The semiconductor nanoparticle of claim 1 , wherein
a peak emission wavelength of the green light is greater than or equal to about 500 nm and less than or equal to about 580 nm, and
the semiconductor nanoparticle has a quantum yield of greater than or equal to about 70% and less than or equal to about 99%.
10 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle has a full width at half maximum of less than or equal to about 40 nm.
11 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle exhibits a trap emission percentage of less than or equal to about 25% as defined by the following formula:
Trap emission percentage (%)=[trap emission area in an emission spectrum/a total area of the emission spectrum]×100
wherein the trap emission area is a peak area corresponding to a wavelength of greater than a peak emission wavelength plus 50 nm.
12 . A method of manufacturing the semiconductor nanoparticle of claim 1 , which comprises:
reacting a zinc precursor with a sulfur precursor in the presence of a first particle containing indium, gallium, silver, and sulfur to form a semiconductor nanocrystal layer containing zinc and sulfur on the first particle,
wherein the reaction comprises adding the first particle and the zinc precursor to a reaction medium including the sulfur precursor and a first organic solvent, and a reaction temperature is greater than about 180° C. and less than about 240° C.
13 . The method of claim 12 , wherein
the sulfur precursor comprises a thiol compound, an isothiocyanate compound, a thiourea compound, a thioacetamide compound, or a combination thereof, and
the zinc precursor comprises a zinc halide.
14 . The method of claim 12 , wherein
the reaction temperature is greater than or equal to about 205° C. and less than or equal to about 215° C., and
a reaction time is greater than or equal to about 30 minutes and less than or equal to about 2 hours.
15 . The method of claim 12 , wherein
the organic solvent comprises a mixture of a C5 to C40 aliphatic hydrocarbon solvent and a C5 to C40 amine solvent.
16 . A composite comprising a matrix and a semiconductor nanoparticle of claim 1 dispersed in the matrix.
17 . The composite of claim 16 , wherein
the composite exhibits a relative luminescent efficiency of greater than or equal to about 60% and the relative luminescent efficiency is defined by the following equation:
relative luminescent efficiency (%)=[luminescent efficiency of the composite after 48 hours/Initial luminescent efficiency of the composite]× 100 .
18 . A color conversion structure, which comprises:
a color conversion layer comprising a color conversion region and optionally a partition wall defining the color conversion region,
wherein the color conversion region comprises a first region corresponding to a first pixel, and the first region comprises the semiconductor nanoparticle of claim 1 .
19 . An electronic device, comprising the semiconductor nanoparticle of claim 1 .