SEMICONDUCTOR NANOPARTICLE, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE INCLUDING THE SAME
A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.
1 . A semiconductor nanoparticle comprising:
a first semiconductor nanocrystal comprising silver, indium, gallium, and sulfur, and a second semiconductor nanocrystal comprising zinc, gallium, and sulfur,
wherein the semiconductor nanoparticle is configured to emit a green light,
the green light has a peak emission wavelength of greater than or equal to about 500 nanometers and less than or equal to about 580 nanometers, and
in the semiconductor nanoparticle, a molar ratio of zinc to indium is greater than or equal to about 0.1:1 and less than or equal to about 10:1.
2 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle exhibits a relative mole value of zinc as defined by the following equation that is greater than or equal to about 0.05 and less than or equal to about 0.9:
Relative
mole
value
of
zinc
=
[
Zn
]
/
(
[
Ag
]
+
[
In
]
+
[
Ga
]
+
[
Zn
]
)
wherein, in the equation,
[Ag], [In], [Ga], and [Zn] are moles of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively.
3 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle, a mole ratio of gallium to indium is greater than or equal to about 2.5:1 and less than or equal to about 10:1.
4 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle has a charge balance value defined by the following equation that is greater than or equal to about 0.9 and less than or equal to about 1.2:
charged
balance
value
=
{
[
Ag
]
+
3
(
[
In
]
+
[
Ga
]
)
+
2
[
Zn
]
}
/
(
2
[
S
]
)
wherein, in the above equation, [Ag], [In], [Ga], [Zn], and [S] are moles of silver, indium, gallium, zinc, and sulfur in the semiconductor nanoparticle, respectively.
5 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of zinc to indium is greater than or equal to about 0.5:1 and less than or equal to about 5:1, and
a mole ratio of moles of gallium to a sum of moles of indium and gallium is greater than or equal to about 0.7:1 and less than or equal to about 0.845:1.
6 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of gallium to silver is greater than or equal to about 1.1:1 and less than or equal to about 3:1, or
a mole ratio of moles of gallium to a sum of moles of gallium, indium, and silver is greater than or equal to about 0.45:1 and less than or equal to about 0.6:1, or
a mole ratio of a sum of moles of indium and gallium to moles of silver is greater than or equal to about 1.4:1 and less than or equal to about 3.7:1.
7 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of a sum of moles of indium and gallium to moles of sulfur is greater than or equal to about 0.2:1 and less than or equal to about 0.8:1, or a mole ratio of silver to sulfur is greater than or equal to about 0.2:1 and less than or equal to about 0.5:1.
8 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of moles of silver to a sum of moles of silver, indium, and gallium is greater than or equal to about 0.3:1 and less than or equal to about 0.5:1, and
a mole ratio of moles of sulfur to a sum of moles of silver, indium, and gallium is greater than or equal to about 0.9:1 and less than or equal to about 2.8:1, and
a mole ratio of zinc to indium is greater than or equal to about 0.8:1 and less than or equal to about 3:1.
9 . The semiconductor nanoparticle of claim 1 , wherein
in the semiconductor nanoparticle,
a mole ratio of moles of sulfur to a sum of moles of silver, indium, gallium, and zinc is greater than or equal to about 0.69:1 and less than or equal to about 1.3:1, and
a mole ratio of sulfur to indium is greater than or equal to about 7:1 and less than or equal to about 25:1.
10 . The semiconductor nanoparticle of claim 1 , wherein
the second semiconductor nanocrystal is disposed on the first semiconductor nanocrystal, and optionally wherein the semiconductor nanoparticle further comprises a third semiconductor nanocrystal comprising silver, gallium, and sulfur and having a chemical composition different from that of the first semiconductor nanocrystal, and the third semiconductor nanocrystal is disposed between the first semiconductor nanocrystal and the second semiconductor nanocrystal.
11 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle further comprises a fourth semiconductor nanocrystal containing zinc and sulfur and having a chemical composition different from that of the second semiconductor nanocrystal,
the second semiconductor nanocrystal is disposed between the fourth semiconductor nanocrystal and the first semiconductor nanocrystal
12 . The semiconductor nanoparticle of claim 1 , wherein
the peak emission wavelength of the green light is greater than or equal to about 520 nanometers and less than or equal to about 540 nanometers.
13 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle has a quantum yield of greater than or equal to about 70% and less than or equal to about 99%, and
a full width at half maximum of greater than or equal to about 15 nanometers and less than or equal to about 40 nanometers.
14 . The semiconductor nanoparticle of claim 1 , wherein
the semiconductor nanoparticle exhibits a trap emission percentage of less than about 25%, as defined by the following equation:
Trap emission percentage (%)=[trap emission area in an emission spectrum/a total area of the emission spectrum]×100
wherein the trap emission area is a peak area with a wavelength of greater than an emission peak wavelength plus 50 nanometers.
15 . A semiconductor nanoparticle composite comprising a matrix and a semiconductor nanoparticle of claim 1 dispersed in the matrix.
16 . The composite of claim 15 , wherein
as exposed to air for 48 hours, a light emitting efficiency of the semiconductor nanoparticle composite is greater than or equal to about 55% of an initial light emitting efficiency thereof.
17 . A method of manufacturing the semiconductor nanoparticle of claim 1 , which comprises:
combining a zinc precursor, a gallium precursor, and a sulfur precursor in the presence of a first semiconductor nanocrystal comprising indium, gallium, silver, and sulfur or a first particle comprising the first semiconductor nanocrystal in a reaction medium to form a second semiconductor nanocrystal comprising zinc, gallium, and sulfur.
18 . The method of claim 17 , wherein
the method further comprises adding the first semiconductor nanocrystal or the first particle; and the zinc precursor to the reaction medium comprising the sulfur precursor and an organic solvent, and the reaction is performed at a temperature of greater than about 180° C. and less than 240° C.
19 . The method of claim 17 , wherein
the sulfur precursor comprises a thiol compound, an isothiocyanate compound, a thiourea compound, or a combination thereof, the gallium precursor comprises a gallium halide, and the gallium halide comprises gallium chloride and gallium fluoride, and the zinc precursor comprises a zinc halide.
20 . An electronic device, comprising the semiconductor nanoparticle of claim 1 .