IP Library Granted Patent US 12,461,655
Granted Patent B1
US 12,461,655 · App. 18/809,046 · Granted Nov 4, 2025

Management of discrete namespaces by nonvolatile memory controller

Inventors: Andrey V. Kuzmin (Moscow, RU); Alan Chen (Simi Valley, CA); Robert Lercari (Thousand Oaks, CA)
Assignee: Radian Memory Systems, LLC
G06F3/0616G06F3/0647G06F3/0679G06F12/0246G06F2212/7205G06F2212/7211
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,461,655
App. No.
18/809,046
Granted
Nov 4, 2025
Kind
B1
Abstract

This disclosure provides techniques for managing memory which match per-data metrics to those of other data or to memory destination. In one embodiment, wear data is tracked for at least one tier of nonvolatile memory (e.g., flash memory) and a measure of data persistence (e.g., age, write frequency, etc.) is generated or tracked for each data item. Memory wear management based on these individually-generated or tracked metrics is enhanced by storing or migrating data in a manner where persistent data is stored in relatively worn memory locations (e.g., relatively more-worn flash memory) while temporary data is stored in memory that is less worn or is less susceptible to wear. Other data placement or migration techniques are also disclosed.

Claims (75)

1 . A storage device comprising:

an interface;

one or more dies of flash memory, a first one of the dies having planes; and

logic, embodied as at least one of circuitry or instructions on a physical storage medium, that when executed, control circuitry of the storage device to:

map storage subdivisions to respective sets of erase units, the erase units of one of the sets, corresponding to one of the subdivisions, including erase units in respective ones of the planes;

transmit, to a host, information representing a size and logical address information for the one of the storage subdivisions;

receive, via the interface, one or more commands from the host which are logically directed to the one of the storage subdivisions, and responsively control physical erasure of erase units, of the erase units of the one of the sets corresponding to the one of the subdivisions, in at least two different ones of the respective ones of the planes;

store metadata data for the one of the of the storage subdivisions; and

detect that the metadata meets a criterion, and responsively:

copy data from an erase unit of the one of the storage subdivisions to a different erase unit; and

map the one of the subdivisions such that, after the copying of the data to the different erase unit, the different erase unit is mapped exclusively to the one of the subdivisions.

2 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

receive a write command addressed to a given one of the storage subdivisions;

identify that the set of the erase units which is mapped to the given one of the storage subdivisions has insufficient free space available; and

responsively map the given one of the storage subdivisions to an additional erase unit, and write data accompanying the write command into the additional erase unit, the additional erase unit being exclusive to erase units mapped to each of the storage subdivisions other than the given one of the storage subdivisions.

3 . The storage device of claim 1 , wherein:

the one or more commands comprise a command to overwrite a logical address with data, the logical address being associated with a given one of the storage subdivisions; and

the logic is further structured to cause the storage device to, with circuitry of the storage device:

track metadata representing release status of physical memory space comprising at least one erase unit in the set which is respective to the given one of the storage subdivisions;

responsive to receipt of the command to overwrite the logical address, deallocate a physical storage location to which the logical address was previously mapped, the physical storage location being in the physical memory space, such that the storage location is marked as released; and

detect a condition where each physical location, in the physical memory space, which contains data, has been marked as released, wherein the physical erasure of erase units in at least two different ones of the respective ones of the planes is responsive to the detection of the condition.

4 . The storage device of claim 1 , wherein:

the one or more commands comprise a deallocate command;

the logic is further structured to cause the storage device to, with circuitry of the storage device:

track metadata representing release status of physical memory space comprising at least one erase unit in the set which is respective to the given one of the storage subdivisions;

responsive to receipt of the deallocate command, deallocate a physical storage location to which the logical address was previously mapped, the physical storage location being in the physical memory space, such that the storage location is marked as released; and

detect a condition where each physical location, in the physical memory space, which contains data, has been marked as released, wherein the physical erasure of erase units in at least two different ones of the respective ones of the planes is responsive to the detection of the condition.

5 . The storage device of claim 1 , wherein the one or more commands from the host are a single command and, further, wherein the single command specifies one or more addresses corresponding to the size of the storage subdivision, such that the logic is operable to cause circuitry of the storage device to control the physical erasure of erase units in the at least two different ones of the respective ones of the planes in response to the single command.

6 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

store additional metadata respective to the one of the storage subdivisions;

receive a query from the host specifying the one of the storage subdivisions; and

transmit, to the host, information dependent on the stored additional metadata which is respective to the one of the storage subdivisions.

7 . The storage device of claim 6 , wherein the information which is transmitted to the host indicates an extent to which the one of the storage subdivisions is full.

8 . The storage device of claim 6 , wherein the information which is transmitted to the host represents a time since data was written to at least one erase unit in the set which is respective to the one of the storage subdivisions.

9 . The storage device of claim 1 , wherein the size of the one of the storage subdivisions corresponds to a minimum amount of storage capacity to be erased by the storage device.

10 . The storage device of claim 1 , wherein:

the metadata comprises release status information for individual logical block addresses (LBAs) associated with the one of the storage subdivisions; and

the logic is further structured to cause the storage device to, with circuitry of the storage device:

detect when the tracked release status information meets a criterion; and

in response to the tracked release status information meeting the criterion, perform at least one maintenance operation on the one of the storage subdivisions to the exclusion of at least one other of the storage subdivisions.

11 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

identify that one or more erase units in the set of erase units which is mapped to a second one of the storage subdivisions has stored data but where all physical storage locations containing such stored data are released; and

responsively control physical erasure of each of the identified one or more erase units.

12 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

track additional metadata for erase units of the flash memory die, wherein the additional metadata provides information representing respective erase unit wear;

select the different erase unit from among alternative choices of erase units in dependence on respective erase unit wear associated with the alternative choices of erase units.

13 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

identify a data access characteristic which is associated with the data being responsively copied to the different erase unit; and

select the different erase unit from among alternative choices of erase units also in dependence on the data access characteristic.

14 . The storage device of claim 13 , wherein the data access characteristic is dependent on access frequency of the data being responsively copied.

15 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

store a number indicating a quantity of the storage subdivisions; and

receive a query from the host and responsively transmit, to the host, information dependent on the stored number.

16 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

detect an error condition associated with an erase unit in one of the of the sets of erase units which is mapped to a given one of the subdivisions; and

responsively remap the given one of the subdivisions to a new erase unit, the new erase unit being exclusively associated with the given one of the subdivisions.

17 . The storage device of claim 1 , wherein:

the one or more commands comprise a write command to write a particular logical address with data; and

the logic is further structured to cause the storage device to, with circuitry of the storage device, and responsive to the write command, control the write of data to the erase units in at least two different ones of the respective ones of the planes concurrently using a common physical page address.

18 . The storage device of claim 1 , wherein:

the one or more dies of flash memory include a second one of the dies;

the second one of the dies also has planes;

one or more commands comprise a write command to write a particular logical address with data; and

the logic is further structured to cause the storage device to, with circuitry of the storage device, and responsive to the write command, control the write of data to the erase units of one of the storage subdivisions including to an erase unit in a single plane in each of the first one of the dies and the second one of the dies, using a common physical page offset for the respective erase units.

19 . The storage device of claim 1 , wherein the logic is further structured to cause the storage device to, with circuitry of the storage device:

store additional metadata respective to the one of the storage subdivisions, wherein the metadata indicates an extent to which the one of the storage subdivisions is full; and

receive a write command addressed to the one of the subdivisions and responsively update the metadata.

20 . A method of operating a storage device, the storage device having an interface, one or more dies of flash memory, a first one of the dies having planes, and logic, embodied as at least one of circuitry, or instructions on a physical storage medium that, when executed, controls the actions of circuitry of the storage device, the method comprising, using the logic:

mapping storage subdivisions to respective sets of erase units, in a manner such that the erase units of one of the sets, corresponding to one of the subdivisions, includes erase units in respective ones of the planes;

transmitting, to a host, information representing a size and logical address information for the one of the storage subdivisions;

receiving, via the interface, one or more commands from the host which are logically directed to the one of the storage subdivisions, and responsively controlling physical erasure of erase units, of the erase units of the one of the sets corresponding to the one of the subdivisions, in at least two different ones of the respective ones of the planes;

storing metadata data for the one of the of the storage subdivisions; and

detecting that the metadata meets a criterion, and responsively:

copying data from an erase unit of the one of the storage subdivisions to a different erase unit; and

mapping the one of the subdivisions such that, after the copying of the data to the different erase unit, the different erase unit is mapped exclusively to the one of the subdivisions.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2024
From: KUZMIN, ANDREY V.; ROBERT, LERCARI; CHEN, ALAN
To: RADIAN MEMORY SYSTEMS, INC.
Reel/Frame 068331/0893 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2024
From: RADIAN MEMORY SYSTEMS, INC.
To: RADIAN MEMORY SYSTEMS, LLC
Reel/Frame 068332/0386 →
Continuity (9)
Continuation 18218257 · Jul 5, 2023
Continuation 17568891 · Jan 5, 2022
Continuation 16832793 · Mar 27, 2020
Continuation 14848273 · Sep 8, 2015
Continuation In Part 14047193 · Oct 7, 2013
Continuation In Part 13767723 · Feb 14, 2013
Provisional Application 62063357 · Oct 13, 2014
Provisional Application 62048162 · Sep 9, 2014
Provisional Application 61757464 · Jan 28, 2013
References Cited (400)
US 4532590A · Wallach · 1985 [cited by applicant]
US 4813002A · Joyce · 1989 [cited by applicant]
US 5404485A · Ban · 1995 [cited by applicant]
US 5568423A · Jou et al. · 1996 [cited by applicant]
US 5652857A · Shimoi et al. · 1997 [cited by applicant]
US 5860082A · Smith et al. · 1999 [cited by applicant]
US 5963977A · Gold · 1999 [cited by applicant]
US 6118724A · Higgenbottom · 2000 [cited by applicant]
US 6134631A · Jennings, III · 2000 [cited by applicant]
US 6145069A · Dye · 2000 [cited by applicant]
US 6148354A · Ban · 2000 [cited by applicant]
US 6381668B1 · Lunteren · 2002 [cited by applicant]
US 6430650B1 · Miyauchi · 2002 [cited by applicant]
US 6571312B1 · Sugai · 2003 [cited by applicant]
US 6892287B1 · Millard · 2005 [cited by applicant]
US 7096378B2 · Stence et al. · 2006 [cited by applicant]
US 7120729B2 · Gonzalez · 2006 [cited by applicant]
US 7339823B2 · Nakayama et al. · 2008 [cited by applicant]
US 7383375B2 · Sinclair · 2008 [cited by applicant]
US 7404031B2 · Oshima · 2008 [cited by applicant]
US 7406563B1 · Nagshain · 2008 [cited by applicant]
US 7409489B2 · Sinclair · 2008 [cited by applicant]
US 7519869B2 · Mizuno · 2009 [cited by applicant]
US 7552272B2 · Gonzalez · 2009 [cited by applicant]
US 7555628B2 · Bennett · 2009 [cited by applicant]
US 7581078B2 · Ware · 2009 [cited by applicant]
US 7631138B2 · Gonzalez · 2009 [cited by applicant]
US 7702846B2 · Nakanishi et al. · 2010 [cited by applicant]
US 7702948B1 · Kalman · 2010 [cited by applicant]
US 7710777B1 · Mintierth · 2010 [cited by applicant]
US 7739444B2 · Sinclair · 2010 [cited by applicant]
US 7747813B2 · Danilak · 2010 [cited by applicant]
US 7752381B2 · Wong · 2010 [cited by applicant]
US 7801561B2 · Parikh et al. · 2010 [cited by applicant]
US 7809900B2 · Danilak · 2010 [cited by applicant]
US 7814262B2 · Sinclair · 2010 [cited by applicant]
US 7818489B2 · Karamcheti et al. · 2010 [cited by applicant]
US 7836244B2 · Kim et al. · 2010 [cited by applicant]
US 7861122B2 · Cornwell et al. · 2010 [cited by applicant]
US 7877540B2 · Sinclair · 2011 [cited by applicant]
US 7904619B2 · Danilak · 2011 [cited by applicant]
US 7934074B2 · Lee · 2011 [cited by applicant]
US 7941692B2 · Royer et al. · 2011 [cited by applicant]
US 7970983B2 · Nochimowski · 2011 [cited by applicant]
US 7984233B2 · Sinclair · 2011 [cited by applicant]
US 7991944B2 · Lee et al. · 2011 [cited by applicant]
US 8001318B1 · Iyer · 2011 [cited by applicant]
US 8024545B2 · Kim et al. · 2011 [cited by applicant]
US 8046524B2 · Tringali · 2011 [cited by applicant]
US 8055833B2 · Danilak et al. · 2011 [cited by applicant]
US 8065471B2 · Yano et al. · 2011 [cited by applicant]
US 8065473B2 · Ito et al. · 2011 [cited by applicant]
US 8068365B2 · Kim · 2011 [cited by applicant]
US 8069284B2 · Oh · 2011 [cited by applicant]
US 8072463B1 · Van Dyke · 2011 [cited by applicant]
US 8074022B2 · Okin et al. · 2011 [cited by applicant]
US 8082389B2 · Fujibayashi · 2011 [cited by applicant]
US 8086790B2 · Roohparvar · 2011 [cited by applicant]
US 8099581B2 · Bennett · 2012 [cited by applicant]
US 8099632B2 · Tringali · 2012 [cited by applicant]
US 8195912B2 · Flynn · 2012 [cited by applicant]
US 8219776B2 · Forhan · 2012 [cited by applicant]
US 8285918B2 · Maheshwari · 2012 [cited by applicant]
US 8291151B2 · Sinclair · 2012 [cited by applicant]
US 8291295B2 · Harari · 2012 [cited by applicant]
US 8301861B2 · Reiter · 2012 [cited by applicant]
US 8341339B1 · Boyle · 2012 [cited by applicant]
US 8347042B2 · You · 2013 [cited by applicant]
US 8386700B2 · Olbrich · 2013 [cited by applicant]
US 8402249B1 · Zhu · 2013 [cited by applicant]
US 8423710B1 · Gole · 2013 [cited by applicant]
US 8495280B2 · Kang · 2013 [cited by applicant]
US 8539197B1 · Marshall · 2013 [cited by applicant]
US 8572331B2 · Shalvi · 2013 [cited by applicant]
US 8601202B1 · Melcher · 2013 [cited by applicant]
US 8621137B2 · Olbrich · 2013 [cited by applicant]
US 8626989B2 · Van Aken · 2014 [cited by applicant]
US 8645634B1 · Cox et al. · 2014 [cited by applicant]
US 8668894B2 · Liu et al. · 2014 [cited by applicant]
US 8700961B2 · Lassa · 2014 [cited by applicant]
US 8898410B1 · Ehrenberg · 2014 [cited by applicant]
US 8954708B2 · Kim · 2015 [cited by applicant]
US 8959307B1 · Bruce · 2015 [cited by applicant]
US 8996796B1 · Karamcheti · 2015 [cited by applicant]
US 9063844B2 · Higgins · 2015 [cited by applicant]
US 9123443B2 · Chung · 2015 [cited by applicant]
US 9134918B2 · Yurzola · 2015 [cited by applicant]
US 9176864B2 · Gorobets · 2015 [cited by applicant]
US 9229854B1 · Kuzmin et al. · 2016 [cited by applicant]
US 9239781B2 · Jones · 2016 [cited by applicant]
US 9286198B2 · Bennett · 2016 [cited by applicant]
US 9329986B2 · Li · 2016 [cited by applicant]
US 9335939B2 · Bennett et al. · 2016 [cited by applicant]
US 9348749B2 · Choi · 2016 [cited by applicant]
US 9378149B1 · Bonwick · 2016 [cited by applicant]
US 9383926B2 · Law · 2016 [cited by applicant]
US 9400749B1 · Kuzmin et al. · 2016 [cited by applicant]
US 9405621B2 · Yu · 2016 [cited by applicant]
US 9519578B1 · Kuzmin et al. · 2016 [cited by applicant]
US 9542118B1 · Lercari et al. · 2017 [cited by applicant]
US 9565269B2 · Malwankar · 2017 [cited by applicant]
US 9575672B2 · Yamamoto · 2017 [cited by applicant]
US 9588904B1 · Lercari et al. · 2017 [cited by applicant]
US 9652376B2 · Kuzmin et al. · 2017 [cited by applicant]
US 9696917B1 · Sareena et al. · 2017 [cited by applicant]
US 9710377B1 · Kuzmin et al. · 2017 [cited by applicant]
US 9727454B2 · Kuzmin et al. · 2017 [cited by applicant]
US 9734086B2 · Flynn · 2017 [cited by applicant]
US 9785572B1 · Lercari et al. · 2017 [cited by applicant]
US 9846541B2 · Miyamoto et al. · 2017 [cited by applicant]
US 9858008B2 · Liu · 2018 [cited by applicant]
US 10067866B2 · Sutardja · 2018 [cited by applicant]
US 10445229B1 · Kuzmin et al. · 2019 [cited by applicant]
US 10552058B1 · Jadon et al. · 2020 [cited by applicant]
US 10552085B1 · Chen et al. · 2020 [cited by applicant]
US 10642505B1 · Kuzmin · 2020 [cited by applicant]
US 10642748B1 · Lercari · 2020 [cited by applicant]
US 10838853B1 · Kuzmin · 2020 [cited by applicant]
US 10884915B1 · Kuzmin · 2021 [cited by applicant]
US 10915458B1 · Lercari · 2021 [cited by applicant]
US 10956082B1 · Kuzmin · 2021 [cited by applicant]
US 10977188B1 · Lercari · 2021 [cited by applicant]
US 10983907B1 · Kuzmin · 2021 [cited by applicant]
US 10996863B1 · Kuzmin · 2021 [cited by applicant]
US 11003586B1 · Lercari · 2021 [cited by applicant]
US 11023315B1 · Jadon · 2021 [cited by applicant]
US 11023386B1 · Lercari · 2021 [cited by applicant]
US 11023387B1 · Lercari · 2021 [cited by applicant]
US 11048643B1 · Lercari · 2021 [cited by applicant]
US 11068408B2 · Kim · 2021 [cited by applicant]
US 11074175B1 · Kuzmin · 2021 [cited by applicant]
US 11080181B1 · Kuzmin · 2021 [cited by applicant]
US 11086789B1 · Lercari · 2021 [cited by applicant]
US 11100006B1 · Lercari · 2021 [cited by applicant]
US 11175984B1 · Lercari · 2021 [cited by applicant]
US 11188457B1 · Kuzmin · 2021 [cited by applicant]
US 11216365B1 · Kuzmin · 2022 [cited by applicant]
US 11221959B1 · Lercari · 2022 [cited by applicant]
US 11221960B1 · Lercari · 2022 [cited by applicant]
US 11221961B1 · Lercari · 2022 [cited by applicant]
US 11487678B2 · Park · 2022 [cited by applicant]
US 11500766B2 · Bueb · 2022 [cited by applicant]
US 11580030B2 · Das · 2023 [cited by applicant]
US 11675708B1 · Lercari · 2023 [cited by applicant]
US 11704237B1 · Kuzmin · 2023 [cited by applicant]
US 11740801B1 · Kuzmin · 2023 [cited by applicant]
US 20030028733A1 · Tsunoda et al. · 2003 [cited by applicant]
US 20030037071A1 · Harris · 2003 [cited by applicant]
US 20030065866A1 · Spencer · 2003 [cited by applicant]
US 20030188032A1 · Solomon · 2003 [cited by applicant]
US 20040083335A1 · Gonzalez · 2004 [cited by applicant]
US 20050073844A1 · Gonzalez · 2005 [cited by applicant]
US 20050073884A1 · Gonzalez · 2005 [cited by examiner]
US 20050144358A1 · Conley · 2005 [cited by applicant]
US 20050144367A1 · Sinclair · 2005 [cited by applicant]
US 20050144413A1 · Kuo · 2005 [cited by applicant]
US 20050160227A1 · Todd · 2005 [cited by applicant]
US 20060004957A1 · Hand, III · 2006 [cited by applicant]
US 20060022171A1 · Leist · 2006 [cited by applicant]
US 20070019481A1 · Park · 2007 [cited by applicant]
US 20070046681A1 · Nagashima · 2007 [cited by applicant]
US 20070058431A1 · Chung et al. · 2007 [cited by applicant]
US 20070091497A1 · Mizuno · 2007 [cited by applicant]
US 20070136555A1 · Sinclair · 2007 [cited by applicant]
US 20070143569A1 · Sanders · 2007 [cited by applicant]
US 20070168321A1 · Saito · 2007 [cited by applicant]
US 20070233939A1 · Kim · 2007 [cited by applicant]
US 20070260811A1 · Merry, Jr. et al. · 2007 [cited by applicant]
US 20070260841A1 · Hampel · 2007 [cited by applicant]
US 20070283428A1 · Ma et al. · 2007 [cited by applicant]
US 20080005502A1 · Kanai · 2008 [cited by applicant]
US 20080034153A1 · Lee · 2008 [cited by applicant]
US 20080082596A1 · Gorobets · 2008 [cited by applicant]
US 20080126720A1 · Danilak · 2008 [cited by applicant]
US 20080126724A1 · Danilak · 2008 [cited by applicant]
US 20080147964A1 · Chow · 2008 [cited by applicant]
US 20080155204A1 · Qawami et al. · 2008 [cited by applicant]
US 20080189485A1 · Jung · 2008 [cited by applicant]
US 20080195833A1 · Park · 2008 [cited by applicant]
US 20080201517A1 · Kuhne · 2008 [cited by applicant]
US 20080209114A1 · Chow · 2008 [cited by applicant]
US 20080307192A1 · Sinclair · 2008 [cited by applicant]
US 20080320476A1 · Wingard · 2008 [cited by applicant]
US 20090036163A1 · Kimbrell · 2009 [cited by applicant]
US 20090044190A1 · Tringali · 2009 [cited by applicant]
US 20090046533A1 · Jo · 2009 [cited by applicant]
US 20090083478A1 · Kunimatsu · 2009 [cited by applicant]
US 20090089482A1 · Traister · 2009 [cited by applicant]
US 20090089490A1 · Ozawa et al. · 2009 [cited by applicant]
US 20090119529A1 · Kono · 2009 [cited by applicant]
US 20090138671A1 · Danilak · 2009 [cited by applicant]
US 20090144497A1 · Withers · 2009 [cited by applicant]
US 20090172219A1 · Mardiks · 2009 [cited by applicant]
US 20090172246A1 · Afriat · 2009 [cited by applicant]
US 20090172250A1 · Allen et al. · 2009 [cited by applicant]
US 20090172257A1 · Prins · 2009 [cited by applicant]
US 20090172499A1 · Olbrich · 2009 [cited by applicant]
US 20090182964A1 · Greiner · 2009 [cited by applicant]
US 20090198946A1 · Ebata · 2009 [cited by applicant]
US 20090210616A1 · Karamcheti · 2009 [cited by applicant]
US 20090210636A1 · Karamcheti · 2009 [cited by applicant]
US 20090216992A1 · Greiner · 2009 [cited by applicant]
US 20090240903A1 · Sauber · 2009 [cited by applicant]
US 20090254689A1 · Karamcheti · 2009 [cited by applicant]
US 20090254705A1 · Abali et al. · 2009 [cited by applicant]
US 20090271562A1 · Sinclair · 2009 [cited by applicant]
US 20090292839A1 · Oh · 2009 [cited by applicant]
US 20090300015A1 · Kazan et al. · 2009 [cited by applicant]
US 20090327602A1 · Moore et al. · 2009 [cited by applicant]
US 20100011085A1 · Taguchi · 2010 [cited by applicant]
US 20100011186A1 · Bennett · 2010 [cited by applicant]
US 20100030946A1 · Kano · 2010 [cited by applicant]
US 20100042655A1 · Tse et al. · 2010 [cited by applicant]
US 20100049908A1 · Gonzalez · 2010 [cited by applicant]
US 20100083050A1 · Ohyama · 2010 [cited by applicant]
US 20100106734A1 · Calder · 2010 [cited by applicant]
US 20100115172A1 · Gillingham et al. · 2010 [cited by applicant]
US 20100125702A1 · Lee · 2010 [cited by applicant]
US 20100161882A1 · Stern et al. · 2010 [cited by applicant]
US 20100162012A1 · Cornwell et al. · 2010 [cited by applicant]
US 20100182838A1 · Kim et al. · 2010 [cited by applicant]
US 20100191779A1 · Hinrichs · 2010 [cited by applicant]
US 20100199065A1 · Kaneda · 2010 [cited by applicant]
US 20100211737A1 · Flynn · 2010 [cited by applicant]
US 20100241866A1 · Rodorff · 2010 [cited by applicant]
US 20100262761A1 · Borchers et al. · 2010 [cited by applicant]
US 20100262762A1 · Borchers · 2010 [cited by applicant]
US 20100262765A1 · Cheon · 2010 [cited by applicant]
US 20100262773A1 · Borchers · 2010 [cited by applicant]
US 20100281230A1 · Rabii et al. · 2010 [cited by applicant]
US 20100287217A1 · Borchers et al. · 2010 [cited by applicant]
US 20100287327A1 · Li · 2010 [cited by applicant]
US 20100287332A1 · Koshiyama · 2010 [cited by applicant]
US 20100299494A1 · Van Acht · 2010 [cited by applicant]
US 20100329011A1 · Lee et al. · 2010 [cited by applicant]
US 20110033548A1 · Kimmel et al. · 2011 [cited by applicant]
US 20110041039A1 · Harari · 2011 [cited by applicant]
US 20110055445A1 · Gee et al. · 2011 [cited by applicant]
US 20110066792A1 · Shaeffer · 2011 [cited by applicant]
US 20110125956A1 · Danilak · 2011 [cited by applicant]
US 20110138114A1 · Yen · 2011 [cited by applicant]
US 20110153911A1 · Sprouse · 2011 [cited by applicant]
US 20110153917A1 · Maita · 2011 [cited by applicant]
US 20110161784A1 · Sellinger et al. · 2011 [cited by applicant]
US 20110167199A1 · Danilak · 2011 [cited by applicant]
US 20110197014A1 · Yeh · 2011 [cited by applicant]
US 20110197023A1 · Iwamitsu et al. · 2011 [cited by applicant]
US 20110231623A1 · Goss · 2011 [cited by applicant]
US 20110238890A1 · Sukegawa · 2011 [cited by applicant]
US 20110238892A1 · Tsai · 2011 [cited by applicant]
US 20110238943A1 · Devendran et al. · 2011 [cited by applicant]
US 20110264843A1 · Haines · 2011 [cited by applicant]
US 20110271032A1 · Yamada · 2011 [cited by applicant]
US 20110276756A1 · Bish et al. · 2011 [cited by applicant]
US 20110283043A1 · Schuette · 2011 [cited by applicant]
US 20110289263A1 · McWilliams · 2011 [cited by applicant]
US 20110296089A1 · Seol · 2011 [cited by applicant]
US 20110296133A1 · Flynn et al. · 2011 [cited by applicant]
US 20110302477A1 · Goss · 2011 [cited by applicant]
US 20110314209A1 · Eckstein · 2011 [cited by applicant]
US 20120033519A1 · Confalonieri et al. · 2012 [cited by applicant]
US 20120054419A1 · Chen · 2012 [cited by applicant]
US 20120059972A1 · Chen · 2012 [cited by applicant]
US 20120066441A1 · Weingarten · 2012 [cited by applicant]
US 20120072645A1 · Olbrich · 2012 [cited by applicant]
US 20120072807A1 · Cornwell · 2012 [cited by applicant]
US 20120079174A1 · Nellans · 2012 [cited by applicant]
US 20120096217A1 · Son · 2012 [cited by applicant]
US 20120131270A1 · Hemmi · 2012 [cited by applicant]
US 20120131381A1 · Eleftheriou · 2012 [cited by applicant]
US 20120155492A1 · Abel · 2012 [cited by applicant]
US 20120159039A1 · Kegel et al. · 2012 [cited by applicant]
US 20120191921A1 · Shaeffer · 2012 [cited by applicant]
US 20120198123A1 · Post · 2012 [cited by applicant]
US 20120198128A1 · Van Aken · 2012 [cited by applicant]
US 20120198129A1 · Van Aken · 2012 [cited by applicant]
US 20120204079A1 · Takefman et al. · 2012 [cited by applicant]
US 20120221776A1 · Yoshihashi · 2012 [cited by applicant]
US 20120246394A1 · Ou · 2012 [cited by applicant]
US 20120284587A1 · Yu · 2012 [cited by applicant]
US 20120303875A1 · Benhase · 2012 [cited by applicant]
US 20130007343A1 · Rub · 2013 [cited by applicant]
US 20130013852A1 · Hou et al. · 2013 [cited by applicant]
US 20130019062A1 · Bennett et al. · 2013 [cited by applicant]
US 20130024460A1 · Peterson · 2013 [cited by applicant]
US 20130054881A1 · Ellis · 2013 [cited by examiner]
US 20130073793A1 · Yamagishi · 2013 [cited by applicant]
US 20130073816A1 · Seo et al. · 2013 [cited by applicant]
US 20130097236A1 · Khorashadi · 2013 [cited by applicant]
US 20130111295A1 · Li et al. · 2013 [cited by applicant]
US 20130111298A1 · Seroff · 2013 [cited by applicant]
US 20130124793A1 · Gyl et al. · 2013 [cited by applicant]
US 20130138868A1 · Seroff · 2013 [cited by applicant]
US 20130145111A1 · Murukani · 2013 [cited by applicant]
US 20130166824A1 · Shim · 2013 [cited by applicant]
US 20130166825A1 · Kim et al. · 2013 [cited by applicant]
US 20130227201A1 · Talagala · 2013 [cited by applicant]
US 20130232297A1 · Tanaka · 2013 [cited by applicant]
US 20130242425A1 · Zayas et al. · 2013 [cited by applicant]
US 20130275682A1 · Ramanujan · 2013 [cited by applicant]
US 20130282055A1 · Parker · 2013 [cited by applicant]
US 20130290619A1 · Knight · 2013 [cited by applicant]
US 20130297852A1 · Fai et al. · 2013 [cited by applicant]
US 20130297880A1 · Flynn · 2013 [cited by applicant]
US 20130326117A1 · Aune · 2013 [cited by applicant]
US 20130332656A1 · Kandiraju · 2013 [cited by applicant]
US 20130339580A1 · Brandt · 2013 [cited by applicant]
US 20140040550A1 · Nale · 2014 [cited by applicant]
US 20140047210A1 · Cohen · 2014 [cited by applicant]
US 20140047300A1 · Liang · 2014 [cited by applicant]
US 20140101371A1 · Nguyen et al. · 2014 [cited by applicant]
US 20140122781A1 · Smith · 2014 [cited by applicant]
US 20140189207A1 · Sinclair · 2014 [cited by applicant]
US 20140189209A1 · Sinclair et al. · 2014 [cited by applicant]
US 20140195725A1 · Bennett · 2014 [cited by applicant]
US 20140208004A1 · Cohen · 2014 [cited by applicant]
US 20140208062A1 · Cohen · 2014 [cited by applicant]
US 20140215129A1 · Kuzmin et al. · 2014 [cited by applicant]
US 20140237168A1 · Prins · 2014 [cited by applicant]
US 20140297949A1 · Nagawaka · 2014 [cited by applicant]
US 20140317346A1 · Moon · 2014 [cited by applicant]
US 20150046670A1 · Kim · 2015 [cited by applicant]
US 20150067297A1 · Arroyo et al. · 2015 [cited by applicant]
US 20150113203A1 · Dancho et al. · 2015 [cited by applicant]
US 20150134930A1 · Huang et al. · 2015 [cited by applicant]
US 20150149789A1 · Seo et al. · 2015 [cited by applicant]
US 20150193148A1 · Miwa et al. · 2015 [cited by applicant]
US 20150212938A1 · Chen et al. · 2015 [cited by applicant]
US 20150261456A1 · Alcantara et al. · 2015 [cited by applicant]
US 20150263978A1 · Olson · 2015 [cited by applicant]
US 20150309734A1 · Brondjik · 2015 [cited by applicant]
US 20150324264A1 · Vidypoornachy et al. · 2015 [cited by applicant]
US 20150339187A1 · Sharon · 2015 [cited by applicant]
US 20150347041A1 · Kotte et al. · 2015 [cited by applicant]
US 20150347291A1 · Choi · 2015 [cited by applicant]
US 20150347296A1 · Kotte · 2015 [cited by applicant]
US 20150355965A1 · Peddle · 2015 [cited by applicant]
US 20150363120A1 · Chen · 2015 [cited by applicant]
US 20150378613A1 · Koseki · 2015 [cited by applicant]
US 20150378886A1 · Nemazie · 2015 [cited by applicant]
US 20160011818A1 · Hashimoto · 2016 [cited by applicant]
US 20160018998A1 · Mohan et al. · 2016 [cited by applicant]
US 20160019148A1 · Vekiarides · 2016 [cited by applicant]
US 20160019159A1 · Ueda · 2016 [cited by applicant]
US 20160026564A1 · Manning · 2016 [cited by applicant]
US 20160070496A1 · Cohen · 2016 [cited by applicant]
US 20160092116A1 · Liu · 2016 [cited by applicant]
US 20160147669A1 · Huang · 2016 [cited by applicant]
US 20160179664A1 · Camp · 2016 [cited by applicant]
US 20160202910A1 · Ravimohan · 2016 [cited by applicant]
US 20160253091A1 · Ayyavu · 2016 [cited by applicant]
US 20160342509A1 · Kotte et al. · 2016 [cited by applicant]
US 20160357462A1 · Nam et al. · 2016 [cited by applicant]
US 20160364179A1 · Tsai et al. · 2016 [cited by applicant]
US 20170031699A1 · Banerjee et al. · 2017 [cited by applicant]
US 20170075620A1 · Yamamoto · 2017 [cited by applicant]
US 20170109078A1 · Shaharabany · 2017 [cited by applicant]
US 20170139838A1 · Tomlin · 2017 [cited by applicant]
US 20170192901A1 · Coffin · 2017 [cited by applicant]
US 20170199703A1 · Ravimohan · 2017 [cited by applicant]
US 20170220287A1 · Wei · 2017 [cited by applicant]
US 20170364445A1 · Allison · 2017 [cited by applicant]
US 20180046480A1 · Dong · 2018 [cited by applicant]
US 20200363996A1 · Kanno · 2020 [cited by applicant]
US 20210064293A1 · Cho · 2021 [cited by applicant]
JP 2001051889A · 2001 [cited by applicant]
JP 2008176606 · 2008 [cited by applicant]
JP 2011123863A · 2011 [cited by applicant]
JP 2011203916A · 2011 [cited by applicant]
WO WO2006065668A2 · 2006 [cited by applicant]
WO WO2008082996 · 2008 [cited by applicant]
WO 2009084724A1 · 2009 [cited by applicant]
WO 2009100149A1 · 2009 [cited by applicant]
WO WO2010027983A1 · 2010 [cited by applicant]
Chang et al., “An efficient FTL design for multi-chipped solid-state drives,” 2010 IEEE 16th Int'l. Conference on Embedded and Real-Time Computing Systems and Applications, 2010, pp. 237-246. [cited by applicant]
RD527033 A, Mar. 10, 2008. [cited by applicant]
C. Kuo et al., “Detecting Solid-State Disk Geometry for Write Pattern Optimization,” 2011 IEEE 17th International Conference on Embedded and Real-Time Computing Systems and Applications, 2011, pp. 89-94. [cited by applicant]
S. Im and D. Shin, “Flash-aware RAID techniques for dependable and high-performance flash memory SSD,” IEEE Transactions on Computers, V. 60, No. 1, pp. 80-92, Jan. 2011. [cited by applicant]
J. Kim et al., “A methodology for extracting performance parameters in solid state disks (SSDs),” 2009 IEEE International Symposium on Modeling, Analysis & Simulation of Computer and Telecommunication Systems, 2009, pp.… [cited by applicant]
W. Lafi et al., “High level modeling and performance evaluation of address mapping in NAND flash memory,” 2009 16th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2009), Yasmine Hammamet, 2009… [cited by applicant]
Tennison, RD, “Memory space mapping using virtual addressing to multiple sized memory units,” IP.com, prior art database technical disclosure, Aug. 1, 1975. [cited by applicant]
Y. Hu et al., “Achieving page-mapping FTL performance at block-mapping FTL cost by hiding address translation,” 2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST), Incline Village, NV, USA, May 3, … [cited by applicant]
Y.. Hu et al., “Achieving page-mapping FTL performance at block-mapping FTL cost by hiding address translation,” 2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST), 2010, pp. 1-12. [cited by applicant]
Kang et al., “A Superblock-based Flash Translation Layer for NAND Flash Memory,” EMSOFT'06, Seoul, Korea, Oct. 22, 2006, ACM 1-59593-542-8/06/0010, pp. 161-170. [cited by applicant]
TN-29-28: Memory Management in NAND Flash Arrays, Micron publication, 2005, 10 pages, available from https://www.micron.com/-/media/client/global/documents/products/technical-note/nand-flash/tn2928.pdf. [cited by applicant]
Park et al., “A Reconfigurable FTL (Flash Translation Layer) Architecture for NAND Flash-Based Applications,” 23 pages, ACM Transactions on Embedded Computing Systems, vol. 7, No. 4, Article 38, Publication date: Jul. 2… [cited by applicant]
Gupta et al., “Dftl: a Flash Translation Layer Employing Demand-based Selective Caching of Page-level Address Mappings,” ASPLOS'09, Mar. 7-11, 2009, Washington, DC, USA, 12 pages. [cited by applicant]
Ruia, Virtualization of Non-Volatile RAM, Texas A&M Masters Thesis, 77 pages, May 2015, available from: https://oaktrust.library.tamu.edu/bitstream/handle/1969.1/154981/RUIA-THESIS-2015.pdf?sequence=1&isAllowed=y. [cited by applicant]
Hsieh et al., “Efficient Identification of Hot Data for Flash Memory Storage Systems,” ACM Transactions on Storage, vol. 2, No. 1, Feb. 2006, 19 Pages (pp. 22-40). [cited by applicant]
Wu et al., “An Adaptive Two-Level Management for the Flash Translation Layer in Embedded Systems ,” https://dl.acm.org/doi/pdf/10.1145/1233501.1233624, Date of Publication: Nov. 9, 2006. [cited by applicant]
Grupp et al., “Characterizing Flash Memory: Anomalies, Observations, and Applications,” https://dl.acm.org/doi/pdf/10.1145/1669112.1669118, Dec. 16, 2006. [cited by applicant]
Huang et al., “Unified Address Translation for Memory-Mapped SSDs with FlashMap,” https://dl.acm.org/doi/10.1145/2749469.2750420, Jun. 15, 2015. [cited by applicant]
Bang et al., “A Memory Hierarchy-Aware Metadata Management Technique for Solid State Disks,” https://ieeexplore.ieee.org/document/6026485, Aug. 10, 2011. [cited by applicant]
Petition for IPR, 2025-01266, U.S. Pat. No. 11,544,183, 81 Pages, Jul. 9, 2025. [cited by applicant]
Petition for IPR, 2025-01289, U.S. Pat. No. 11,681,614, 103 Pages, Jul. 14, 2025. [cited by applicant]
Petition for IPR, 2025-01321, U.S. Pat. No. 11,709,772, 87 Pages, Jul. 17, 2025. [cited by applicant]
Petition for IPR, 2025-01350, U.S. Pat. No. 11,740,901, 100 Pages, Jul. 28, 2025. [cited by applicant]
Litz Declaration in support of petition for IPR, 2025-01266, U.S. Pat. No. 11,544,183, 85 Pages, Jul. 9, 2025. [cited by applicant]
Litz Declaration in support of petition for IPR, 2025-01289, U.S. Pat. No. 11,681,614 150 Pages, Jul. 11, 2025. [cited by applicant]
Litz Declaration in support of petition for IPR2025-01321, U.S. Pat. No. 11,709,772, 122 Pages, Jul. 16, 2025. [cited by applicant]
Cited By (3)
US 12,625,819 US 12,650,928 US 12,657,133