ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

1 . An electrostatic discharge protection circuit for a first transistor of a first type, comprising:

N diodes in series between a first conduction terminal of said first transistor and a second conduction terminal of said first transistor, N being an integer, wherein a turn-on voltage of the N diodes is greater, whatever the temperature, than a power supply voltage;

a second transistor of the first type in series with a third transistor of a second type different from the first type, wherein the second and third transistors are connected between the first conduction terminal of said first transistor and the second conduction terminal of said first transistor, wherein a control terminal of said third transistor is coupled to an anode of said N diodes;

a first inverter coupling a control terminal of said first transistor to a control terminal of said second transistor;

a fourth transistor in parallel with said first transistor, wherein a control terminal of said fourth transistor is coupled to a junction point of said second transistor and third transistor; and

a first capacitor arranged between the control terminal of said fourth transistor and the first conduction terminal of said first transistor.

2 . The circuit according to claim 1 , further comprising a first resistor coupling said anode of said N diodes and the first conduction terminal of said first transistor.

3 . The circuit according to claim 1 , wherein N is between ten and twenty.

4 . The circuit according to claim 3 , wherein N is equal to fourteen.

5 . The circuit according to claim 1 , further comprising a second resistor coupling said control terminal of said fourth transistor to said second conduction terminal of said first transistor.

6 . The circuit according to claim 5 , further comprising a fifth transistor coupled in series with said second resistor between said second conduction terminal of said first transistor and said control terminal of said fourth transistor.

7 . The circuit according to claim 1 , further comprising a second capacitor arranged in series with the first capacitor between said control terminal of said fourth transistor and said first conduction terminal of said first transistor.

8 . The circuit according to claim 1 , further comprising a first diode arranged between a junction node of said first capacitor and second capacitor and said second conduction terminal of said first transistor.

9 . The circuit according to claim 1 , further comprising a second diode arranged in parallel with said second resistor.

10 . The circuit according to claim 1 , wherein said second conduction terminal of said first transistor is configured to receive a reference voltage.

11 . The circuit according to claim 10 , wherein the reference voltage is the ground.

12 . The circuit according to claim 10 , wherein the first conduction terminal of said first transistor is configured as an output node.

13 . The circuit according to claim 1 , wherein said first, second, third, fourth transistors are transistors of same technology.

14 . The circuit according to claim 13 , further comprising a fifth transistor coupling said second resistor to said second conduction terminal of said first transistor, and wherein the fifth transistor is of same technology as said first, second, third, fourth transistors.

15 . The circuit according to claim 13 , wherein said first, second, third, fourth transistors are drift MOS transistors.

16 . An electronic device, comprising:

said first transistor; and

the electrostatic discharge protection circuit according to claim 1 .