NON-VOLATILE MEMORY DEVICE, CORRESPONDING METHOD AND SYSTEM

1 . A memory device, comprising:

a memory array comprising memory cells arranged in a set of memory portions and addressable via pairs of row and column values, wherein each memory portion in the set of memory portions comprises at least one sector of memory cells arranged in rows and columns;

a set of sense amplifier circuits comprising sense amplifier circuits coupled to and interposed between adjacent memory portions in the set of memory portions of the memory array;

a control logic circuit coupled to the memory array and configured to:

provide at least one address signal indicative of a pair of row and column values to localize at least one addressed memory cell in the memory array; and

issue read or write access requests towards the at least one addressed memory cell in the memory array;

a first set of access devices coupled to the control logic circuit, to the memory cells in the memory array, and to the set of sense amplifier circuits, wherein the first set of access devices are configured to be made conductive to couple a respective first addressed memory cell in a respective memory portion of the set of memory portions of the memory array to a respective sense amplifier circuit in the set of sense amplifier circuits in response to a read access request issued by the control logic circuit; and

a second set of access devices coupled to the control logic circuit, to the memory cells in the memory array, and to a main programming bitline, wherein the second set of access devices are configured to be made conductive to couple a respective second addressed memory cell in the respective memory portion of the set of memory portions of the memory array to the main programming bitline in response to a write access request issued by the control logic circuit.

2 . The memory device of claim 1 , wherein the first set of access devices comprises:

a first subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell, and to a local bitline portion; and

a second subset of access devices coupled to the local bitline portion and to a sense amplifier circuit in the set of sense amplifier circuits;

wherein, in response to the control logic circuit issuing a read signal:

first access devices in the first subset of access devices are configured to be made conductive to couple the addressed memory cell to the local bitline portion as a result; and

second access devices in the second subset of access devices are configured to be made conductive to provide a current flow path from the local bitline portion to the sense amplifier circuit, with a read electric current flowing from the addressed memory cell to the sense amplifier circuit as a result.

3 . The memory device of claim 2 , wherein the second set of access devices comprises:

a third subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

a fourth subset of access devices coupled to the main programming bitline;

wherein, in response to the control logic circuit issuing a write signal:

third access devices in the third subset of access devices are configured to be made conductive, coupling the addressed memory cell to the main programming bitline to receive a programming electric current as a result; and

fourth access devices in the fourth subset of access devices are configured to be made conductive to provide a second current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

4 . The memory device of claim 3 , further comprising a program driver circuit coupled to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the second access devices in the second set of access devices;

wherein the program driver circuit is configured to receive the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to the fourth access devices in the fourth subset of access devices being made conductive.

5 . The memory device of claim 1 , wherein the second set of access devices comprises:

a third subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

a fourth subset of access devices coupled to the main programming bitline;

wherein, in response to the control logic circuit issuing a write signal:

third access devices in the third subset of access devices are configured to be made conductive, coupling the addressed memory cell to the main programming bitline to receive a programming electric current as a result; and

fourth access devices in the fourth subset of access devices are configured to be made conductive to provide a current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

6 . The memory device of claim 5 , further comprising a program driver circuit coupled to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the fourth access devices in the fourth subset of access devices;

wherein the program driver circuit is configured to receive the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to the fourth access devices in the fourth subset of access devices being made conductive.

7 . The memory device of claim 1 , wherein the memory cells in the memory array are phase-change memories.

8 . A method, comprising:

providing a memory array comprising memory cells arranged in a set of memory portions and addressable via pairs of row and column values, each memory portion in the set of memory portions comprising at least one sector of memory cells arranged in rows and columns;

coupling and interposing sense amplifier circuits in a set of sense amplifier circuits to and between adjacent memory portions in the set of memory portions of the memory array;

coupling a control logic circuit to the memory array, the control logic circuit configured to provide at least one address signal indicative of a pair of row and column values to localize at least one addressed memory cell in the memory array, and to issue read or write access requests towards the at least one addressed memory cell in the memory array;

coupling a first set of access devices to the control logic circuit, to the memory cells in the memory array and to the set of sense amplifier circuits, the access devices in the first set of access devices being configured to be made conductive to couple a respective first addressed memory cell in a respective memory portion of the set of memory portions of the memory array to a respective sense amplifier circuit in the set of sense amplifier circuits in response to a read access request issued by the control logic circuit; and

coupling a second set of access devices to the control logic circuit, to the memory cells in the memory array and to a main programming bitline, the access devices in the second set of access devices being configured to be made conductive to couple a respective second addressed memory cell in the respective memory portion of the set of memory portions of the memory array to the main programming bitline in response to a write access request issued by the control logic circuit.

9 . The method of claim 8 , wherein coupling the first set of access devices comprises:

coupling a first subset of access devices to the memory portion in the set of memory portions of the addressed memory cell and to a local bitline portion; and

coupling a second subset of access devices to the local bitline portion and to a sense amplifier circuit in the set of sense amplifier circuits;

wherein, in response to issuing a read signal by the control logic circuit:

first access devices in the first subset of access devices are made conductive, coupling the addressed memory cell to the local bitline portion as a result; and

second access devices in the second subset of access devices are made conductive to provide a current flow path from the local bitline portion to the sense amplifier circuit, with a read electric current flowing from the addressed memory cell to the sense amplifier circuit as a result.

10 . The method of claim 9 , wherein coupling the second set of access devices comprises:

coupling a third subset of access devices to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

coupling a fourth subset of access devices to the main programming bitline;

wherein, in response to issuing a write signal by the control logic circuit:

third access devices in the third subset of access devices are made conductive, coupling the addressed memory cell to the main programming bitline to receive a programming electric current as a result; and

fourth access devices in the fourth subset of access devices are made conductive to provide a second current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

11 . The method of claim 10 , further comprising coupling a program driver circuit to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the second access devices in the second set of access devices;

wherein the method comprises receiving, via the program driver circuit, the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to access devices in the fourth subset of access devices being made conductive.

12 . The method of claim 8 , wherein coupling the second set of access devices comprises:

coupling a third subset of access devices to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

coupling a fourth subset of access devices to the main programming bitline;

wherein, in response to issuing a write signal by the control logic circuit:

third access devices in the third subset of access devices are made conductive, coupling the addressed memory cell to the main programming bitline to receive a programming electric current as a result; and

fourth access devices in the fourth subset of access devices are made conductive to provide a current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

13 . The method of claim 12 , further comprising coupling a program driver circuit to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the fourth access devices in the fourth subset of access devices;

wherein the method comprises receiving, via the program driver circuit, the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to access devices in the fourth subset of access devices being made conductive.

14 . A system, comprising:

a memory device comprising:

a memory array comprising memory cells arranged in a set of memory portions and addressable via pairs of row and column values, wherein each memory portion in the set of memory portions comprises at least one sector of memory cells arranged in rows and columns;

a set of sense amplifier circuits comprising sense amplifier circuits coupled to and interposed between adjacent memory portions in the set of memory portions of the memory array;

a control logic circuit coupled to the memory array and configured to:

provide at least one address signal indicative of a pair of row and column values to localize at least one addressed memory cell in the memory array; and

issue read or write access requests towards the at least one addressed memory cell in the memory array;

a first set of access devices coupled to the control logic circuit, to the memory cells in the memory array, and to the set of sense amplifier circuits, wherein the first set of access devices are configured to be made conductive to couple a respective first addressed memory cell in a respective memory portion of the set of memory portions of the memory array to a respective sense amplifier circuit in the set of sense amplifier circuits in response to a read access request issued by the control logic circuit; and

a second set of access devices coupled to the control logic circuit, to the memory cells in the memory array, and to a main programming bitline, wherein the second set of access devices are configured to be made conductive to couple a respective second addressed memory cell in the respective memory portion of the set of memory portions of the memory array to the main programming bitline in response to a write access request issued by the control logic circuit; and

a digital-to-analog converter circuit configured to produce a programming electric current provided to the main programming bitline.

15 . The system of claim 14 , wherein the digital-to-analog converter circuit is configured to produce the programming electric current provided to the main programming bitline via a program driver circuit coupled therebetween.

16 . The system of claim 14 , wherein the first set of access devices comprises:

a first subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell, and to a local bitline portion; and

a second subset of access devices coupled to the local bitline portion and to a sense amplifier circuit in the set of sense amplifier circuits;

wherein, in response to the control logic circuit issuing a read signal:

first access devices in the first subset of access devices are configured to be made conductive to couple the addressed memory cell to the local bitline portion as a result; and

second access devices in the second subset of access devices are configured to be made conductive to provide a current flow path from the local bitline portion to the sense amplifier circuit, with a read electric current flowing from the addressed memory cell to the sense amplifier circuit as a result.

17 . The system of claim 16 , wherein the second set of access devices comprises:

a third subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

a fourth subset of access devices coupled to the main programming bitline;

wherein, in response to the control logic circuit issuing a write signal:

third access devices in the third subset of access devices are configured to be made conductive, coupling the addressed memory cell to the main programming bitline to receive the programming electric current as a result; and

fourth access devices in the fourth subset of access devices are configured to be made conductive to provide a second current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

18 . The system of claim 17 , further comprising a program driver circuit coupled to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the second access devices in the second set of access devices;

wherein the program driver circuit is configured to receive the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to the fourth access devices in the fourth subset of access devices being made conductive.

19 . The system of claim 14 , wherein the second set of access devices comprises:

a third subset of access devices coupled to the memory portion in the set of memory portions of the addressed memory cell and to the main programming bitline; and

a fourth subset of access devices coupled to the main programming bitline;

wherein, in response to the control logic circuit issuing a write signal:

third access devices in the third subset of access devices are configured to be made conductive, coupling the addressed memory cell to the main programming bitline to receive the programming electric current as a result; and

fourth access devices in the fourth subset of access devices are configured to be made conductive to provide a current flow path, with a feedback electric current flowing from the addressed memory cell to the main programming bitline as a result.

20 . The system of claim 19 , further comprising a program driver circuit coupled to:

the control logic circuit to receive address signals therefrom;

the main programming bitline; and

the fourth access devices in the fourth subset of access devices;

wherein the program driver circuit is configured to receive the feedback electric current from the addressed memory cell in the set of memory portions of the memory array in response to the fourth access devices in the fourth subset of access devices being made conductive.