A MICRO LED PANEL WITH RE-GROWTH LAYER AND MANUFACTURING METHOD THEREOF
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer. In some embodiments, the mesa structure comprises a light-emitting layer. In some embodiments, the re-growth layer is grown at least on the sidewall of the light-emitting layer. The re-growth layer is not parallel to the extending direction of the light-emitting layer.
1 . A micro LED panel having a micro LED array, comprising a plurality of micro LED structures, wherein each of the plurality of micro LED structures comprises:
a mesa structure, comprising a first-type epitaxial layer, a light-emitting layer, and a second-type epitaxial layer from bottom to top; and
a re-growth layer, grown at least on a sidewall of the light-emitting layer.
2 . The micro LED panel according to claim 1 , wherein the re-growth layer is grown on a whole of the sidewall of the light-emitting layer and a part of the second-type epitaxial layer.
3 . The micro LED panel according to claim 1 , wherein the re-growth layer is not parallel to an extending direction of the light-emitting layer.
4 . The micro LED panel according to claim 3 , wherein an inclined angle of the re-growth layer relative to the extending direction of the light-emitting layer is about 30 degrees to about 90 degrees.
5 . The micro LED panel according to claim 1 , wherein a diameter of the mesa structure is less than or equal to about 3 μm.
6 . The micro LED panel according to claim 1 , wherein:
the light-emitting layer comprises a top surface, an edge surface, and a bottom surface;
the re-growth layer is grown on the edge surface of the light-emitting layer; and
the re-growth layer is not grown on the top surface and the bottom surface of the light-emitting layer.
7 . The micro LED panel according to claim 6 , wherein:
the light-emitting layer comprises a plurality of pairs of quantum wells; and
the re-growth layer is not parallel to a surface of each of the plurality of pairs of quantum wells.
8 . The micro LED panel according to claim 6 , wherein a cross section of the light-emitting layer has a straight line shape without any bending.
9 . The micro LED panel according to claim 1 , wherein:
a material of the re-growth layer with intrinsic doped ions is the same as a material of the first-type epitaxial layer or a material of the second-type epitaxial layer; and
the material of the re-growth layer does not include extrinsic doping ions.
10 . The micro LED panel according to claim 1 , wherein a material of the re-growth layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and/or InN.
11 . The micro LED panel according to claim 1 , wherein:
a material of the re-growth layer is monocrystal;
a material of the first-type epitaxial layer is monocrystal; and
a material of the second-type epitaxial layer is monocrystal.
12 . The micro LED panel according to claim 1 , wherein a band gap of the re-growth layer is greater than a band gap of the light-emitting layer.
13 . The micro LED panel according to claim 1 , wherein a thickness of the re-growth layer is less than a thickness of the light-emitting layer.
14 . The micro LED panel according to claim 13 , wherein a thickness of the re-growth layer is less than or equal to about 100 nm.
15 . The micro LED panel according to claim 1 , wherein resistance of the re-growth layer is higher than resistance of the light-emitting layer.
16 . The micro LED panel according to claim 15 , wherein the re-growth layer is not electrically conductive.
17 . The micro LED panel according to claim 1 , wherein:
a dielectric layer is further formed between the mesa structure of adjacent micro LED structures of the plurality of micro LED structures; and
the dielectric layer is further formed on a surface of the re-growth layer.
18 . The micro LED panel according to claim 17 , wherein:
a bottom-connected structure is formed at a bottom of the mesa structure and electrically connected to the first-type epitaxial layer; and
a top conductive layer is formed on the second-type epitaxial layer and electrically connected to the second-type epitaxial layer.
19 . The micro LED panel according to claim 17 , wherein a material of the dielectric layer is one or more of SiO 2 , SiN x , Al 2 O 3 , AlN, HfO 2 , TiO 2 , and/or ZrO 2 .
20 . The micro LED panel according to claim 1 , wherein:
a material of the first-type epitaxial layer is one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and/or AlGaInP; and
a material of the second-type epitaxial layer is one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, and/or AlGaInP.
21 - 91 . (canceled)