COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass %) and the content of the (D) component is noted as Md (mass %), Mc/Md is 10 to 200.
1 . A composition for chemical mechanical polishing, comprising:
(A) abrasive grains;
(B) a liquid medium;
(C) an oxidizing agent; and
(D) a nitrogen-containing heterocyclic compound,
wherein an absolute value of a zeta potential of (A) in the composition for chemical mechanical polishing is 10 mV or more, and
in a case where a content of (C) is set as Mc in mass %, and a content of (D) is set as Md in mass %, Mc/Md=100 to 200.
2 . The composition for chemical mechanical polishing as claimed in claim 1 , wherein (A) has a functional group represented by General Formula (1) as follows:
wherein M + represents a monovalent cation.
3 . The composition for chemical mechanical polishing as claimed in claim 2 , wherein the zeta potential of (A) in the composition for chemical mechanical polishing is −10 mV or less.
4 . The composition for chemical mechanical polishing as claimed in claim 1 , wherein (A) has a functional group represented by General Formula (2) as follows:
wherein M + represents a monovalent cation.
5 . The composition for chemical mechanical polishing as claimed in claim 4 , wherein the zeta potential of (A) in the composition for chemical mechanical polishing is −10 mV or less.
6 . The composition for chemical mechanical polishing as claimed in claim 1 , wherein (A) has a functional group represented by General Formula (3) or General Formula (4) as follows:
wherein in General Formula (3) and General Formula (4), R 1 , R 2 , and R 3 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group, and M− represents an anion.
7 . The composition for chemical mechanical polishing as claimed in claim 6 , wherein the zeta potential of (A) in the composition for chemical mechanical polishing is +10 mV or more.
8 . The composition for chemical mechanical polishing as claimed in claim 1 , having a pH of 1 or more and 6 or less.
9 . The composition for chemical mechanical polishing as claimed in claim 1 , wherein, with respect to a total mass of the composition for chemical mechanical polishing, a content of (A) is 0.005 mass % or more and 15 mass % or less.
10 . The composition for chemical mechanical polishing as claimed in claim 1 , wherein (D) has an azole structure.
11 . A polishing method, comprising a step of polishing a semiconductor substrate by using the composition for chemical mechanical polishing as claimed in claim 1 .
12 . The polishing method as claimed in claim 11 , wherein the semiconductor substrate comprises a portion containing silver.