IP Library Patent Application 18885554
Patent Application
App. No. 18/885,554

LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME

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Quick Facts
Patent No.
US None
App. No.
18/885,554
Abstract

A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Claims (10)

1 . A light emitting diode, comprising:

a semiconductor structure comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer;

an ohmic contact layer disposed on the second type semiconductor layer;

a first insulating layer disposed on the semiconductor structure and comprising a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer;

a first connection wiring disposed on the first insulating layer, the first connection wiring comprising a first portion and a second portion; and

a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening;

wherein:

the first portion is protruded from the second portion on the second semiconductor layer to cover a side of the second semiconductor layer and the active layer,

the first portion of the first connection wiring is electrically connected to the first type semiconductor layer through the first opening; and

the second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.