SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.
1 . A semiconductor device, comprising:
an active region having a first surface and a second surface;
a first semiconductor layer at the first surface;
a first metal element-containing structure covering the first semiconductor layer and comprising a first metal element;
a first p-type or n-type layer between the first semiconductor layer and the first metal element-containing structure;
a second semiconductor layer between the first semiconductor layer and the first p-type or n-type layer; and
an insulating layer covering a portion of the first semiconductor layer and a portion of the second semiconductor;
wherein the first p-type or n-type layer comprises an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the second semiconductor layer has a trapezoid shape or a rectangular shape in a sectional view.
2 . The semiconductor device of claim 1 , wherein the first p-type or n-type layer physically contacts the second semiconductor layer and the first metal element-containing structure.
3 . The semiconductor device of claim 1 , wherein the first metal element-containing structure does not physically contact the first semiconductor layer and the first metal element-containing structure electrically connects the first semiconductor layer through the first p-type or n-type layer.
4 . The semiconductor device of claim 1 , wherein the first p-type or n-type layer comprises only one kind of metal elements.
5 . The semiconductor device of claim 1 , wherein the first semiconductor layer has a first width and the second semiconductor layer has a second width less than the first width.
6 . The semiconductor device of claim 1 , wherein the second semiconductor layer has a material the same as the material of the first semiconductor layer.
7 . The semiconductor device of claim 1 , wherein the insulating layer comprises an oxide compound, a nitride compound or a fluoride compound.
8 . The semiconductor device of claim 1 , wherein the second metal element comprises In, Ti, Al, Zn, Ni, Ga, Mo, V, W, or Nb.
9 . The semiconductor device of claim 1 , wherein the first semiconductor layer has a first dopant concentration, the second semiconductor layer has a second dopant concentration higher than the first dopant concentration.
10 . The semiconductor device of claim 9 , wherein the second dopant concentration is higher than or equal to 1×10 19 /cm 3 .
11 . The semiconductor device of claim 1 , wherein the insulating layer has a thickness greater than the thickness of the first p-type or n-type layer.
12 . The semiconductor device of claim 1 , wherein the second semiconductor layer has a side wall and a surface, the insulating structure covers the side wall, and a portion of the surface is exposed from the insulating structure and physically contacts the first p-type or n-type layer.
13 . The semiconductor device of claim 1 , wherein and the active region comprises a group III-V semiconductor material contains elements of Al, Ga, As, P, N or In.
14 . The semiconductor device of claim 1 , wherein the first metal element-containing structure is overlapped with the second semiconductor layer in a vertical direction.
15 . The semiconductor device of claim 1 , wherein the second semiconductor layer has a thickness larger than the thickness of the first p-type or n-type layer.
16 . The semiconductor device of claim 1 , wherein the first metal element-containing structure is devoid of Be.
17 . The semiconductor device of claim 1 , wherein the first metal element comprises Ti, Ni, Al, Zn, Ge, Mo, W, V, Ga, Au or Ag.
18 . The semiconductor device of claim 1 , wherein the first p-type or n-type layer comprises a metal oxide compound.
19 . The semiconductor device of claim 1 , wherein the first semiconductor layer comprises a group III-V semiconductor material which is a binary compound semiconductor.
20 . A semiconductor component, comprising:
a package substrate;
a semiconductor device located on the package substrate, the semiconductor device comprising:
an active region having a first surface and a second surface;
a first semiconductor layer at the first surface;
a first metal element-containing structure covering the first semiconductor layer and comprising a first metal element;
a first p-type or n-type layer between the first semiconductor layer and the first metal element-containing structure;
a second semiconductor layer between the first semiconductor layer and the first p-type or n-type layer; and
an insulating layer covering a portion of the first semiconductor layer and a portion of the second semiconductor;
wherein the first p-type or n-type layer comprises an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the second semiconductor layer has a trapezoid shape or a rectangular shape in a sectional view; and
an encapsulation structure covers the semiconductor device.