SEMICONDUCTOR DIE SHIELDING STRUCTURE
According to some embodiments, a device is provided that includes a pre-package and an interconnect package. The pre-package has a semiconductor die having a first contact pad, a molding layer over the semiconductor die, and a first contact comprising a first base portion embedded in the molding layer and contacting the first contact pad, and a first fan out portion over a portion of the molding layer and extending from the first base portion. The interconnect package has a first interconnect structure embedded in a dielectric material and contacting the first contact, wherein the pre-package is embedded in the dielectric material.
1 . A device, comprising:
a pre-package comprising:
a semiconductor die comprising a first contact pad;
a molding layer over the semiconductor die; and
a first contact comprising:
a first base portion embedded in the molding layer and contacting the first contact pad; and
a first fan out portion over a portion of the molding layer and extending from the first base portion; and
an interconnect package, comprising:
a first interconnect structure embedded in a dielectric material and contacting the first contact, wherein:
the pre-package is embedded in the dielectric material.
2 . The device of claim 1 , wherein:
the first contact pad contacts a first source/drain region of a semiconductor device in the semiconductor die.
3 . The device of claim 2 , wherein:
the pre-package comprises:
a second contact pad in the semiconductor die contacting a second source/drain region of the semiconductor device; and
a second contact comprising:
a second base portion embedded in the molding layer and contacting the second contact pad; and
a second fan out portion over a second portion of the molding layer and extending from the second base portion; and
the interconnect package comprises:
a second interconnect structure embedded in the dielectric material and contacting the second contact.
4 . The device of claim 1 , wherein:
the interconnect package comprises:
a second interconnect structure embedded in the dielectric material and contacting a substrate of the semiconductor die.
5 . The device of claim 4 , wherein:
the interconnect package comprises:
a back side contact pad connected to the second interconnect structure.
6 . The device of claim 1 , wherein:
the interconnect package comprises:
a front side contact pad connected to the first interconnect structure on a first surface of the interconnect package; and
a back side contact pad connected to the first interconnect structure on a second surface of the interconnect package opposite the first surface.
7 . The device of claim 1 , wherein:
the first fan out portion extends from the first base portion in a direction toward an edge of the semiconductor die.
8 . The device of claim 1 , wherein:
the first fan out portion extends from the first base portion in a first direction toward an edge of the semiconductor die and in a second direction away from the edge of the semiconductor die.
9 . A method, comprising:
forming a molding layer over a semiconductor die;
forming a first contact opening in the molding layer to expose a first contact pad of the semiconductor die;
forming a conductive layer over the molding layer and in the first contact opening;
patterning the conductive layer to form a first contact comprising:
a first base portion extending through the molding layer and contacting the first contact pad; and
a first fan out portion extending from the first base portion over a first portion of the molding layer;
mounting the semiconductor die in a recess of an interconnect package;
forming a dielectric material in the recess; and
forming a first interconnect structure embedded in the dielectric material and contacting the first contact.
10 . The method of claim 9 , comprising:
providing the first contact pad contacting a first source/drain region of a semiconductor device in the semiconductor die.
11 . The method of claim 10 , comprising:
forming a second contact opening in the molding layer to expose a second contact pad of the semiconductor die, wherein:
the second contact pad contacts a second source/drain region of the semiconductor device;
forming the conductive layer comprises forming the conductive layer in the second contact opening; and
patterning the conductive layer comprises patterning the conductive layer to form a second contact in the second contact opening comprising:
a second base portion extending through the molding layer and contacting the second contact pad; and
a second fan out portion extending from the second base portion over a second portion of the molding layer; and
forming a second interconnect structure embedded in the dielectric material and contacting the second contact.
12 . The method of claim 9 , wherein:
mounting the semiconductor die in the recess comprises:
contacting a substrate of the semiconductor die to a second interconnect structure in the interconnect package, wherein:
the interconnect package comprises:
a back side contact pad connected to the second interconnect structure.
13 . The method of claim 9 , comprising:
providing the interconnect package comprising:
a front side contact pad connected to the first interconnect structure on a first surface of the interconnect package; and
a back side contact pad connected to the first interconnect structure on a second surface of the interconnect package opposite the first surface.
14 . The method of claim 9 , wherein:
patterning the conductive layer to form the first contact comprises:
forming the first fan out portion to extend from the first base portion in a direction toward an edge of the semiconductor die.
15 . The method of claim 9 , wherein:
patterning the conductive layer to form the first contact comprises:
forming the first fan out portion to extend from the first base portion in a first direction toward an edge of the semiconductor die and in a second direction away from the edge of the semiconductor die.
16 . A device, comprising:
a semiconductor die comprising:
a power semiconductor device, comprising:
a first source/drain region; and
a second source/drain region;
a first contact pad connected to the first source/drain region; and
a second contact pad connected to the second source/drain region;
a molding layer over the semiconductor die;
a first contact comprising:
a first base portion embedded in the molding layer and contacting the first contact pad; and
a first fan out portion over a first portion of the molding layer and extending from the first base portion;
a second contact comprising:
a second base portion embedded in the molding layer and contacting the second contact pad; and
a second fan out portion over a second portion of the molding layer and extending from the second base portion;
a first interconnect structure embedded in a dielectric material and contacting the first contact; and
a second interconnect structure embedded in the dielectric material and contacting the second contact.
17 . The device of claim 16 , comprising:
a third interconnect structure embedded in the dielectric material and contacting a substrate of the semiconductor die.
18 . The device of claim 17 , comprising:
a back side contact pad connected to the third interconnect structure.
19 . The device of claim 16 , comprising:
a front side contact pad connected to the first interconnect structure on a first surface of the device; and
a back side contact pad connected to the first interconnect structure on a second surface of the device opposite the first surface.
20 . The device of claim 16 , wherein:
the first fan out portion extends from the first base portion in a first direction toward an edge of the semiconductor die and in a second direction away from the edge of the semiconductor die.