IP Library › Patent Application 18895936
Patent Application
App. No. 18/895,936

Semiconductor Heterostructure with Improved Light Emission

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Quick Facts
Patent No.
US None
App. No.
18/895,936
Abstract

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

Claims (52)

1 . A semiconductor heterostructure, comprising:

a first semiconductor layer, wherein the first semiconductor layer has a first index of refraction n1;

a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer comprising an active region including a quantum well and a barrier, wherein the quantum well has a second index of refraction n2 and the barrier has a third index of refraction n3 different from n2;

a third semiconductor layer disposed on the second semiconductor layer, wherein the third semiconductor layer has a fourth index of refraction n4, and wherein n1>n2;

a fourth semiconductor layer disposed on the third semiconductor layer;

a p-type electrode disposed on a p-type metal contact, wherein the p-type metal contact is attached to the fourth semiconductor layer;

an n-type electrode disposed on an n-type metal contact, wherein the n-type metal contact is attached to the first semiconductor layer;

a p-type contact pad connected to the p-type electrode; and

an n-type contact pad connected to the n-type electrode,

wherein the p-type contact pad is wider than the p-type electrode.

2 . The semiconductor heterostructure of claim 1 , wherein each of the first semiconductor layer and the fourth semiconductor layer is doped using a dopant different from each other.

3 . The semiconductor heterostructure of claim 2 , wherein n1>n2>n3.

4 . The semiconductor heterostructure of claim 3 , wherein the p-type electrode or the n-type electrode is reflective of a radiation generated by the active region.

5 . The semiconductor heterostructure of claim 4 , wherein the third semiconductor layer includes a region having a graded composition.

6 . The semiconductor heterostructure of claim 2 , wherein the n-type contact pad is wider than the n-type electrode.

7 . The semiconductor heterostructure of claim 3 , wherein a thickness of the quantum well is thinner than a thickness of the barrier.

8 . A semiconductor heterostructure, comprising:

a first semiconductor layer, wherein the first semiconductor layer has a first index of refraction n1;

a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer comprising an active region including a quantum well and a barrier, wherein the quantum well has a second index of refraction n2 and the barrier has a third index of refraction n3 different from n2;

a third semiconductor layer disposed on the second semiconductor layer, wherein the third semiconductor layer has a fourth index of refraction n4, and wherein n1>n2;

a fourth semiconductor layer disposed on the third semiconductor layer;

a p-type electrode disposed on a p-type metal contact, wherein the p-type metal contact is attached to the fourth semiconductor layer;

an n-type electrode disposed on an n-type metal contact, wherein the n-type metal contact is attached to the first semiconductor layer;

a p-type contact pad connected to the p-type electrode; and

an n-type contact pad connected to the n-type electrode,

wherein the n-type contact pad is wider than the n-type electrode.

9 . The semiconductor heterostructure of claim 8 , wherein each of the first semiconductor layer and the fourth semiconductor layer is doped using a dopant different from each other.

10 . The semiconductor heterostructure of claim 9 , wherein n1>n2>n3.

11 . The semiconductor heterostructure of claim 10 , wherein the p-type electrode or the n-type electrode is reflective of a radiation generated by the active region.

12 . The semiconductor heterostructure of claim 11 , wherein the third semiconductor layer includes a region having a graded composition.

13 . The semiconductor heterostructure of claim 9 , wherein the p-type contact pad is wider than the p-type electrode.

14 . The semiconductor heterostructure of claim 10 , wherein a thickness of the quantum well is thinner than a thickness of the barrier.

15 . An optoelectronic device, comprising:

a submount; and

a semiconductor device disposed on the submount, the semiconductor device including:

a substrate;

a buffer layer disposed on the substrate;

a first semiconductor layer disposed on the buffer layer, wherein the first semiconductor layer has a first index of refraction n1;

a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer comprising an active region including a quantum well and a barrier, wherein the quantum well has a second index of refraction n2 and the barrier has a third index of refraction n3 different from n2;

a third semiconductor layer disposed on the second semiconductor layer, wherein the third semiconductor layer has a fourth index of refraction n4, and wherein n1>n2;

a fourth semiconductor layer disposed on the third semiconductor layer;

a p-type electrode disposed on a p-type metal contact, wherein the p-type metal contact is attached to the fourth semiconductor layer;

an n-type electrode disposed on an n-type metal contact, wherein the n-type metal contact is attached to the first semiconductor layer;

a p-type contact pad connected to the p-type electrode; and

an n-type contact pad connected to the n-type electrode,

wherein the p-type contact pad is wider than the p-type electrode.

16 . The optoelectronic device of claim 15 , wherein the substrate is located farther away from the submount than the active region is located from the submount.

17 . The optoelectronic device of claim 15 , wherein each of the first semiconductor layer and the fourth semiconductor layer is doped using a dopant different from each other.

18 . The optoelectronic device of claim 17 , wherein a thickness of the quantum well is thinner than a thickness of the barrier, and

wherein n1>n2>n3.

19 . The optoelectronic device of claim 18 , wherein the third semiconductor layer includes a region having a graded composition.

20 . The optoelectronic device of claim 16 , wherein the p-type electrode or the n-type electrode is reflective of a radiation generated by the active region and wherein the p-type contact pad is wider than the p-type electrode.