SEMICONDUCTOR DEVICE
An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.
1 . A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure on the first semiconductor structure and comprising a first aluminum content;
a plurality of voids in the second semiconductor structure;
an active structure between the first semiconductor structure and the second semiconductor structure; and
a third semiconductor structure between the active structure and the second semiconductor structure, and comprising a second aluminum content;
wherein the first aluminum content is greater than the second aluminum content.
2 . The semiconductor device of claim 1 , wherein the third semiconductor structure comprises InP.
3 . The semiconductor device of claim 1 , wherein one of the plurality of voids comprises a depth between 200 nm and 650 nm.
4 . The semiconductor device of claim 1 , wherein one of the plurality of voids penetrates a part of the third semiconductor structure.
5 . The semiconductor device of claim 4 , wherein the active structure comprises a first surface facing one of the plurality of voids, and a distance between the first surface and the void is between 10 nm and 150 nm.
6 . The semiconductor device of claim 1 , further comprising a conductive layer and a contact structure between the second semiconductor structure and the conductive layer.
7 . The semiconductor device of claim 6 , wherein the active structure is separated from the conductive layer by a first distance, and the first semiconductor structure comprises a thickness different from first distance.
8 . The semiconductor device of claim 1 , further comprising a base and an adhesive layer between the base and the second semiconductor structure.
9 . The semiconductor device of claim 8 , wherein the adhesive layer connects the base and the first semiconductor structure, and the adhesive layer comprises insulating material.
10 . The semiconductor device of claim 8 , further comprising a reflective layer between the adhesive layer and the second semiconductor structure, and the adhesive layer electrically connects to the reflective layer.
11 . The semiconductor device of claim 10 , further comprising a plurality of blocking structures between the reflective layer and the second semiconductor structure.
12 . The semiconductor device of claim 1 , wherein the semiconductor device emits a light with a wavelength between 1000 nm and 2000 nm.
13 . The semiconductor device of claim 1 , further comprising a fourth semiconductor structure between the second semiconductor structure and the active structure.
14 . The semiconductor device of claim 13 , wherein the second semiconductor structure and the fourth semiconductor structure comprise the same material.
15 . The semiconductor device of claim 1 , wherein the second semiconductor structure comprises a first etching rate and the third semiconductor structure comprises a second etching rate, and the first etching rate is 1.5 to 10 times greater than the second etching rate.
16 . The semiconductor device of claim 1 , further comprising a first electrode structure and a second electrode structure, and the second semiconductor structure located between the first electrode structure and the second electrode structure.
17 . The semiconductor device of claim 1 , further comprises a first electrode structure and a second electrode structure arranged on the same side of the first semiconductor structure.
18 . The semiconductor device of claim 1 , wherein the second semiconductor structure comprises a filling factor between 0.1 and 0.25.
19 . The semiconductor device of claim 1 , wherein the plurality of voids is devoid of penetrating the fourth semiconductor structure.
20 . The semiconductor device of claim 1 , wherein a width of one of the plurality of voids increases in the direction away from the active structure.