MICRO LED DISPLAY PANEL

1 . A micro LED display panel, comprising:

a micro LED array area including a plurality of micro LED structures;

a bonding layer formed between adjacent micro LED structures and at a bottom of the adjacent micro LED structures; and

a substrate formed at a bottom of the bonding layer, wherein the bonding layer is bonded with the substrate.

2 . The micro LED display panel according to claim 1 , wherein the micro LED structure comprises:

a first type epitaxial layer;

a light emitting layer formed on the first type epitaxial layer;

a second type epitaxial layer formed on the light emitting layer, wherein the second type epitaxial layer further comprises:

a micro lens structure and a bottom structure, the micro lens structure and the bottom structure being an integrated structure;

wherein a mesa structure comprises the first type epitaxial layer, the light emitting layer, and the bottom structure of the second type epitaxial layer, the bonding layer being formed between adjacent mesa structures of the adjacent micro LED structures.

3 . The micro LED display panel according to claim 2 , wherein a sidewall of the mesa structure is inclined.

4 . The micro LED display panel according to claim 2 , wherein the micro LED structure further comprises: a passivation layer formed on a sidewall surface of the mesa structure.

5 . The micro LED display panel according to claim 4 , wherein the passivation layer is further formed on a top surface of the bonding layer.

6 . The micro LED display panel according to claim 5 , wherein the bonding layer comprising a top pad projecting through the passivation layer.

7 . The micro LED display panel according to claim 4 , wherein a material of the passivation layer is selected from one or more of SiO 2 , Si3N 4 , or Al 2 O 3 .

8 . The micro LED display panel according to claim 4 , wherein the micro LED structure further comprises a top transparent conductive layer formed on a surface of the micro lens structure.

9 . The micro LED display panel according to claim 8 , wherein a material of the top transparent conductive layer is selected from one or more of ITO (Indium Tin Oxide), Al doped ZnO, or Ga doped ZnO.

10 . The micro LED display panel according to claim 8 , wherein the top transparent conductive layer continuously covers a whole surface of the second type epitaxial layer.

11 . The micro LED display panel according to claim 10 , further comprising a top contact formed on the top transparent conductive layer between adjacent micro lens structures.

12 . The micro LED display panel according to claim 8 , wherein a thickness of the top transparent conductive layer is in a range of 5 nm to 500 nm.

13 . The micro LED display panel according to claim 8 , further comprising an electrode pad formed on an edge of the micro LED array area and connected with the top transparent conductive layer.

14 . The micro LED display panel according to claim 13 , wherein an end of the top transparent conductive layer is formed on part of a top of the electrode pad and on a sidewall of the electrode pad.

15 . The micro LED display panel according to claim 13 , wherein a sidewall of the top transparent conductive layer is connected with a sidewall of the electrode pad.

16 . The micro LED display panel according to claim 13 , wherein a top of the electrode pad is higher than a top of an end of the top transparent conductive layer.

17 . The micro LED display panel according to claim 2 , wherein a material of the first type epitaxial layer is selected from one or more of GaN, AlGaN, GaP, AlGaInP, or AlInP; a material of the second type epitaxial layer is selected from one or more of AlInP, AlGaInP, GaN, or AlGaN; and the light emitting layer is a quantum well layer.

18 . The micro LED display panel according to claim 2 , wherein the micro lens structure and the bottom structure are made of a same material.

19 . The micro LED display panel according to claim 18 , wherein the micro lens structure is semi-spherical, conical, pyramidal, cylindrical, or circular truncated conical.

20 . The micro LED display panel according to claim 18 , wherein a height of the micro lens structure is in a range of 0.05 μm to 10 μm, and a diameter of a bottom cross section of the micro lens structure is in a range of 0.5 μm to 10 μm.

21 . The micro LED display panel according to claim 2 , wherein the second type epitaxial layer further comprises: an extrusion portion interconnected between adjacent micro LED structures.

22 . The micro LED display panel according to claim 21 , wherein the extrusion portion extends along a horizontal direction.

23 . The micro LED display panel according to claim 21 , wherein the micro LED structure further comprises: a passivation layer formed on a bottom surface of the extrusion portion and on a sidewall surface of the mesa structure.

24 . The micro LED display panel according to claim 23 , wherein the micro LED structure further comprises: a top transparent conductive layer formed on a surface of the micro lens structure and on a top surface of the extrusion portion.

25 . The micro LED display panel according to claim 4 , wherein the micro LED structure further comprises a reflective layer formed on a sidewall surface of the passivation layer.

26 . The micro LED display panel according to claim 25 , wherein the reflective layer is further formed on a bottom of the mesa structure.

27 . The micro LED display panel according to claim 26 , wherein a conductive bottom contact is further formed on the bottom of the mesa structure and on an inner surface of the reflective layer.

28 . The micro LED display panel according to claim 25 , wherein a material of the reflective layer is selected from one or more of Al, Ag, Ti, Pt, Au, Ni, Cr, or Sn.

29 . The micro LED display panel according to claim 1 , wherein a material of the substrate is Si.