POLISHING COMPOSITION FOR A SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME
A polishing composition for a semiconductor process according to one embodiment of the present disclosure includes a polishing particle and a corrosion inhibitor. The corrosion inhibitor includes a first corrosion inhibitor, which is an amino azole-based compound and a second corrosion inhibitor, which is a diazole-based compound. The polishing composition for a semiconductor process has a pH of 2 to 5. A static etch rate for a tungsten film of the polishing composition for a semiconductor process is 6 Å/min or less. When polishing a substrate comprising a tungsten film and the silicon oxide film, such a polishing composition may provide a defect-reduced polished surface while exhibiting excellent polishing rate for a silicon oxide film.
1 . A polishing composition for a semiconductor process, comprising
a polishing particle; and a corrosion inhibitor,
wherein the corrosion inhibitor comprises a first corrosion inhibitor, which is an amino azole-based compound; and a second corrosion inhibitor, which is a diazole-based compound,
wherein the polishing composition for a semiconductor process has a pH of 2 to 5, and
a static etch rate for a tungsten film of the polishing composition for a semiconductor process is 6/min or less.
2 . The polishing composition for a semiconductor process of claim 1 ,
I corr , which is a corrosion current density for a tungsten film of the polishing composition for a semiconductor process is 60 μA/cm 2 or less.
3 . The polishing composition for a semiconductor process of claim 1 ,
E corr , which is a corrosion potential for a tungsten film of the polishing composition for a semiconductor process is −30 mV or more.
4 . The polishing composition for a semiconductor process of claim 1 ,
comprising the corrosion inhibitor of 0.07 wt % to 3 wt %.
5 . The polishing composition for a semiconductor process of claim 1 ,
wherein a ratio of a content (by weight) of the second corrosion inhibitor to a content (by weight) of the first corrosion inhibitor is 0.6 to 2.0.
6 . The polishing composition for a semiconductor process of claim 1 ,
wherein the corrosion inhibitor inhibits corrosion of a tungsten film.
7 . The polishing composition for a semiconductor process of claim 1 ,
further comprising a fluorine-based surfactant of 10 ppm (by weight) to 500 ppm (by weight).
8 . The polishing composition for a semiconductor process of claim 1 ,
a polishing selectivity ratio of a silicon oxide film to a tungsten film of the polishing composition for a semiconductor process is 5 or more.
9 . A method of manufacturing a substrate, comprising polishing a substrate by applying the polishing composition for a semiconductor process of claim 1 as a slurry.