MICRO LED ELEMENT, MICRO LED DISPLAY PANEL AND DISPLAY DEVICE

1 . A micro LED element, comprising:

a mesa comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down;

a passivation layer formed on a sidewall surface of the mesa; and

a Schottky metal layer disposed adjacent to the passivation layer, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer.

2 . The micro LED element according to claim 1 , wherein a height of the Schottky metal layer spans across at least a part of a height of the light emitting layer.

3 . The micro LED element according to claim 2 , wherein the height of the Schottky metal layer further spans across at least a part of a height of the first semiconductor layer and/or the second semiconductor layer.

4 . The micro LED element according to claim 1 , wherein the Schottky metal layer comprises:

a first Schottky part in contact with the passivation layer; and

a second Schottky part extending from the mesa, wherein the second Schottky part is connected to the first Schottky part.

5 . The micro LED element according to claim 4 , further comprising a bias electrode on the second Schottky part.

6 . The micro LED element according to claim 1 , wherein a thickness of the passivation layer is in a range of 3 nm to 15 nm.

7 . The micro LED element according to claim 1 , wherein the passivation layer is an ALD (Atomic Layer Deposition)-based layer.

8 . The micro LED element according to claim 1 , wherein a material of the Schottky metal layer is selected from one or more of W, Au, Ag, Al, Mu, Ni, Pt, Cr or Ti.

9 . The micro LED element according to claim 1 , wherein the mesa further comprises a bottom electrical conductive layer formed on a bottom surface of the second semiconductor layer.

10 . The micro LED element according to claim 9 , wherein the mesa further comprises a metal reflective layer disposed on a bottom surface of the bottom electrical conductive layer.

11 . The micro LED element according to claim 9 , wherein the bottom electrical conductive layer further comprises a first transparent conductive layer formed on a bottom surface of the second semiconductor layer.

12 . The micro LED element according to claim 11 , wherein the mesa further comprises a metal reflective layer disposed on a bottom surface of the first transparent conductive layer.

13 . The micro LED element according to claim 1 , wherein a diameter of a top surface of the mesa is smaller than a diameter of a bottom surface of the mesa.

14 . The micro LED element according to claim 13 , further comprising a second transparent conductive layer formed on a top surface of the mesa.

15 . The micro LED element according to claim 4 , wherein a diameter of a top surface of the mesa is greater than a diameter of a bottom surface of the mesa.

16 . The micro LED element according to claim 15 , wherein the passivation layer comprises a sidewall part and a passivation part, wherein the sidewall part is formed on the sidewall surface of the mesa, and the passivation part is formed extending outwards of the mesa and continuously interconnected with a passivation part of adjacent micro LED element.

17 . The micro LED element according to claim 16 , wherein the first semiconductor layer comprises a first sub-layer formed on the light emitting layer and a second sub-layer formed on the first sub-layer and covering the passivation part of the passivation layer.

18 . The micro LED element according to claim 17 , wherein a second Schottky part is deposited on the bottom surface of the passivation part.

19 . The micro LED element according to claim 1 , wherein a diameter of a top surface of the mesa is similar to a diameter of a bottom surface of the mesa.

20 . A micro LED display panel, comprising:

an integrated circuit (IC) backplane; and

a plurality of micro LED elements, each of the plurality of micro LED elements comprising:

a mesa comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down;

a passivation layer formed on a sidewall surface of the mesa; and

a Schottky metal layer disposed adjacent to the passivation layer, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer,

wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.

21 . The micro LED display panel according to claim 20 , wherein the Schottky metal layers of each of the plurality of micro LED elements are electrically interconnected.

22 . The micro LED display panel according to claim 20 , wherein the Schottky metal layers of each of the plurality of micro LED elements are separated from each other.

23 . The micro LED display panel according to claim 20 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are electrically interconnected.

24 . The micro LED display panel according to claim 20 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are separate from each other.

25 . A micro LED display panel, comprising:

an integrated circuit (IC) backplane;

a plurality of micro LED elements disposed on a top surface of the IC backplane, wherein each of the plurality of micro LED elements comprises:

a mesa comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down; and

a passivation layer formed on a sidewall surface of the mesa;

an insulating layer formed on the top surface of the IC backplane between each of the plurality of micro LED elements; and

a Schottky metal layer disposed on the insulating layer and adjacent to the passivation layer of each of the plurality of micro LED elements, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer of each of the plurality of micro LED elements.

26 . The micro LED display panel according to claim 25 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are electrically interconnected.

27 . The micro LED display panel according to claim 25 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are separated from each other.

28 . A display device comprising a micro LED display panel, the micro LED display panel comprising:

an integrated circuit (IC) backplane; and

a plurality of micro LED elements, each of the plurality of micro LED elements comprising:

a mesa comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down;

a passivation layer formed on a sidewall surface of the mesa; and

a Schottky metal layer disposed adjacent to the passivation layer, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer,

wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.