MICRO LED ELEMENT, MICRO LED DISPLAY PANEL AND DISPLAY DEVICE
A micro LED element includes a mesa including a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, and the intermediate layer includes: a light emitting layer; and a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to the outside of the mesa to have an exposed surface relative to the mesa; and a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.
1 . A micro LED element, comprising:
a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
a light emitting layer; and
a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa; and
a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.
2 . The micro LED element according to claim 1 , wherein a height of the third semiconductor layer is in a range of 5 nm to 50 nm.
3 . The micro LED element according to claim 1 , further comprising a passivation layer formed on a sidewall surface of each of the two stages of the mesa; wherein,
the Schottky metal layer is further disposed on a surface of the passivation layer.
4 . The micro LED element according to claim 3 , wherein a height of the Schottky metal layer further spans across at least a part of a height of the light emitting layer.
5 . The micro LED element according to claim 4 , wherein the height of the Schottky metal layer further spans across at least a part of: a height of the first semiconductor layer, the third semiconductor layer, or the second semiconductor layer.
6 . The micro LED element according to claim 5 , further comprising a bias electrode contacting the Schottky metal layer.
7 . The micro LED element according to claim 3 , wherein a thickness of the passivation layer is in a range of 10 nm to 200 nm.
8 . The micro LED element according to claim 3 , wherein the passivation layer is an ALD (Atomic Layer Deposition)-based layer.
9 . The micro LED element according to claim 1 , wherein a material of the Schottky metal layer is selected from one or more of W, Au, Ag, Al, Mo, Pd, Ni, Pt, Cr or Ti.
10 . The micro LED element according to claim 1 , wherein the mesa further comprises a bottom electrical conductive layer formed on a bottom surface of the second semiconductor layer.
11 . The micro LED element according to claim 10 , wherein the mesa further comprises a metal reflective layer disposed on a bottom surface of the bottom electrical conductive layer.
12 . The micro LED element according to claim 10 , wherein the bottom electrical conductive layer further comprises a first transparent conductive layer formed on a bottom surface of the second semiconductor layer.
13 . The micro LED element according to claim 12 , wherein the mesa further comprises a metal reflective layer disposed on a bottom surface of the first transparent conductive layer.
14 . The micro LED element according to claim 1 , wherein a size of the mesa decreases with a height of the mesa, and the third semiconductor layer disposed on a top surface of the light emitting layer.
15 . The micro LED element according to claim 14 , further comprising a second transparent conductive layer formed on a top surface of the mesa.
16 . The micro LED element according to claim 14 , wherein the third semiconductor layer has a same doping type as the first semiconductor layer and a lower doping concentration than the first semiconductor layer.
17 . The micro LED element according to claim 1 , wherein a size of the mesa increases with a height of the mesa, and the third semiconductor layer is disposed on a bottom surface of the light emitting layer.
18 . The micro LED element according to claim 17 , wherein the third semiconductor has a same doping type as the second semiconductor layer and a lower doping concentration than the second semiconductor layer.
19 . A micro LED display panel, comprising:
an integrated circuit (IC) backplane; and
a plurality of micro LED elements, each of the plurality of micro LED elements comprising:
a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
a light emitting layer; and
a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa; and
a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer,
wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.
20 . The micro LED display panel according to claim 19 , wherein the Schottky metal layers of the plurality of micro LED elements are electrically interconnected.
21 . The micro LED display panel according to claim 19 , wherein the Schottky metal layers of the plurality of micro LED elements are separated from each other.
22 . The micro LED display panel according to claim 19 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of the plurality of micro LED elements are electrically interconnected.
23 . The micro LED display panel according to claim 19 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of the plurality of micro LED elements are separate from each other.
24 . A micro LED display panel, comprising:
an integrated circuit (IC) backplane;
a plurality of micro LED elements disposed on a top surface of the IC backplane, wherein each of the plurality of micro LED elements comprises:
a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of intermediate layer, and the intermediate layer comprises:
a light emitting layer; and
a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa;
a passivation layer formed on a sidewall surface of the mesa; and
an insulating layer formed on the top surface of the IC backplane between each of the plurality of micro LED elements; and
a Schottky metal layer disposed on the exposed surface, on the insulating layer, and a surface of the passivation layer of each of the plurality of micro LED elements, wherein the Schottky metal layer creates a depletion region in the light emitting layer of each of the plurality of micro LED elements.
25 . The micro LED display panel according to claim 24 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are electrically interconnected.
26 . The micro LED display panel according to claim 24 , wherein each of the plurality of micro LED elements further comprises a second transparent conductive layer formed on a top surface of the mesa, and the second transparent conductive layers of each of the plurality of micro LED elements are separated from each other.
27 . A display device comprising a micro LED display panel, the micro LED display panel comprising:
an integrated circuit (IC) backplane; and
a plurality of micro LED elements each of the plurality of micro LED elements comprising:
a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
a light emitting layer; and
a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa; and
a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer,
wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.