SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS INCLUDING THE SAME
A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.
1 . A semiconductor light-emitting device, comprising:
a light-emitting stack structure comprising a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and
a first passivation layer disposed on a side surface of the light-emitting stack structure,
wherein the light-emitting stack structure is configured to emit light having a light-emitting peak wavelength in a range of about 610 nm to about 650 nm, and
wherein the first passivation layer comprises aluminum oxynitride (AlON).
2 . The semiconductor light-emitting device of claim 1 , wherein a composition ratio of nitrogen in AlON of the first passivation layer is in a range of about 1 at % to about 10 at %.
3 . The semiconductor light-emitting device of claim 1 , wherein a thickness of the first passivation layer is in a range of about 1 nm to about 50 nm.
4 . The semiconductor light-emitting device of claim 1 , further comprising a second passivation layer disposed on the first passivation layer.
5 . The semiconductor light-emitting device of claim 4 , wherein the second passivation layer comprises at least one of SiO 2 , SiN, SiCN, SiOC, SiON, SiOCN, HfO x , AlO x , ZrO x , AlN, AlO x N y , Ta 2 O 3 , or Ta 2 O 5 .
6 . The semiconductor light-emitting device of claim 5 , wherein the second passivation layer is stacked in one to five layers.
7 . The semiconductor light-emitting device of claim 4 , wherein the second passivation layer comprises an amorphous material.
8 . The semiconductor light-emitting device of claim 4 , wherein the second passivation layer has a thickness of about 1 nm to about 15 nm.
9 . The semiconductor light-emitting device of claim 1 , further comprising a SiO 2 passivation layer and a Al 2 O 3 passivation layer included in the first passivation layer.
10 . The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting device has a diameter in a range of about 0.5 μm to about 2 μm.
11 . The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting device has a height in a range of about 2 μm to about 7 μm.
12 . A display apparatus, comprising:
a plurality of pixel electrodes;
a common electrode corresponding to the plurality of pixel electrodes;
a plurality of semiconductor light-emitting devices connected between each of the plurality of pixel electrodes and the common electrode; and
a driving circuit layer configured to drive the plurality of semiconductor light-emitting devices,
wherein each semiconductor light-emitting device of the plurality of semiconductor light-emitting devices comprises:
a light-emitting stack structure comprising a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and
a first passivation layer disposed on a side surface of the light-emitting stack structure, wherein the light-emitting stack structure is configured to emit light having a light-emitting peak wavelength in a range of about 610 nm to about 650 nm, and
wherein the first passivation layer comprises aluminum oxynitride (AlON).
13 . The display apparatus of claim 12 , wherein a composition ratio of nitrogen in AlON of the first passivation layer is in a range of about 1 at % to about 10 at %.
14 . The display apparatus of claim 12 , wherein a thickness of the first passivation layer is in a range of about 1 nm to about 50 nm.
15 . The display apparatus of claim 12 , wherein each semiconductor light-emitting device further comprises:
a second passivation layer disposed on the first passivation layer, and
wherein the second passivation layer comprises at least one of SiO 2 , SiN, SiCN, SiOC, SiON, SiOCN, HfO x , AlO x , ZrO x , AlN, AlO x N y , Ta 2 O 3 , or Ta 2 O 5 .
16 . A method of manufacturing a semiconductor light-emitting device, the method comprising:
forming a first semiconductor layer on a substrate;
forming an active layer on the first semiconductor layer;
forming a second semiconductor layer on the active layer;
forming a plurality of light-emitting stack structures by etching the first semiconductor layer, the active layer, and the second semiconductor layer; and
depositing a first passivation layer on the plurality of light-emitting stack structures,
wherein the plurality of light-emitting stack structures are formed to emit light having a peak wavelength in a range of about 610 nm to about 650 nm, and
wherein the depositing of the first passivation layer comprises selectively repeating, a plurality of times, a process of AlN deposition and Al 2 O 3 deposition and a plasma process.
17 . The method of claim 16 , wherein the process of the AlN deposition and the Al 2 O 3 deposition comprises performing the AlN deposition two consecutive times and performing the Al 2 O 3 deposition two consecutive times.
18 . The method of claim 16 , wherein, in the process of the AlN deposition and the Al 2 O 3 deposition, the AlN deposition is performed earlier than the Al 2 O 3 deposition.
19 . The method of claim 16 , wherein the depositing the first passivation layer comprises depositing a passivation layer material in which a composition ratio of nitrogen in aluminum oxynitride (AlON) is in a range of about 1 at % to about 10 at %.
20 . The method of claim 16 , wherein the depositing the first passivation layer is performed such that a thickness of the first passivation layer is in a range of about 1 nm to about 50 nm.