Semiconductor Device and Methods of Manufacturing a Semiconductor Device
A semiconductor device including a semiconductor chip formed from a semiconductive material and a cover formed from a conductive material is provided. The semiconductor chip and cover are bonded with a thermal interface material composition that includes metal particles dispersed in a resin or resin blend and a silane-based adhesion promoter. The TIM composition may also include a rubber and a curing agent. Methods of making semiconductor devices are also provided.
1 . A semiconductor device, comprising;
a semiconductor chip formed from a semiconductive material and a cover formed from a conductive material bonded with a thermal interface material composition comprising a conductive material comprising metal particles dispersed in a resin and a silane-based adhesion promoter.
2 . The semiconductor device of claim 1 , wherein the metal particles comprise silver.
3 . The semiconductor device of claim 1 , wherein the metal particles are in the form of flakes having a D50 of from about 1 μm to about 4 μm.
4 . The semiconductor device of claim 1 , wherein the conductive material further comprises submicron metal particles.
5 . The semiconductor device of claim 4 , wherein the submicron metal particles comprise a D50 of from about 0.1 μm to about 0.7 μm.
6 . The semiconductor device of claim 4 , wherein the submicron metal particles comprise silver.
7 . The semiconductor device of claim 4 , wherein the submicron metal particles are present in an amount of from about 0.1 wt. % to about 10 wt. % based on the total weight of the composition.
8 . The semiconductor device of claim 1 , wherein the metal particles are present in an amount of from about 85 wt. % to about 95 wt. % based on the total weight of the thermal interface material composition.
9 . The semiconductor device of claim 1 , wherein the resin comprises a polyepoxide resin, a triacrylate resin, or combinations thereof.
10 . The semiconductor device of claim 1 , wherein the resin is present in an amount ranging from 1 wt. % to about 10 wt. %.
11 . The semiconductor device of claim 1 , wherein the silane-based adhesion promoter comprises a bifunctional organosilane.
12 . The semiconductor device of claim 1 , wherein the silane-based adhesion promoter is present in an amount of from about 0.01 wt. % to about 1 wt. % based on the total weight of the thermal interface material composition.
13 . The semiconductor device of claim 1 , wherein the thermal interface material composition further comprises a rubber.
14 . The semiconductor device of claim 13 , wherein the rubber comprises vinyl butadiene rubber.
15 . The semiconductor device of claim 14 , wherein the vinyl butadiene rubber has a number average molecular weight of from about 3,000 to about 3,500 g/mol.
16 . The semiconductor device of claim 1 , wherein the thermal interface material composition further comprises a curing agent.
17 . The semiconductor device of claim 16 , wherein the curing agent is present in an amount of from about 0.02 wt. % to about 0.25 wt. % based on the total weight of the thermal interface material composition.
18 . The semiconductor device of claim 16 , wherein the curing agent comprises an imidazole compound.
19 . The semiconductor device of claim 1 , wherein the thermal interface material composition has a resistivity of from about 30 μOhm/cm to about 70 μOhm/cm or a thermal conductivity ranging from about 8 W/mK to about 30 W/mK.
20 . A method for making a semiconductor device, the method comprising:
disposing a thermal interface material composition comprising a conductive material comprising metal particles dispersed in a resin and a silane-based adhesion promoter on a cover formed from a conductive material;
placing a semiconductor chip formed from a semiconductive material on the thermal interface material composition forming a component assembly; and
curing the component assembly to bond the cover and the semiconductor chip.