IP Library › Patent Application 18959480
Patent Application
App. No. 18/959,480

DOPED HIGH PURITY POLYSILOCARB MATERIALS, APPLICATIONS AND PROCESSES

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Quick Facts
Patent No.
US None
App. No.
18/959,480
Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4 -nines, 6 -nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Claims (23)

1 - 28 . (canceled)

29 . A high purity SiOC composition comprising of 1% to 99% silicon, 1% to 99% carbon and 1% to 99% oxygen and a dopant; wherein the dopant is selected to provide an electrical property to a SiC wafer; and wherein the SiOC composition is substantially free from impurities, whereby the composition is at last 99.99% pure.

30 . The composition of claim, wherein the silicon oxycarbide is at least 99.999% pure.

31 . The composition of claim 29 , having a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon.

32 . The composition of claim 29 , having a molar ratio of about 50% to 65% carbon, about 20% to 30% oxygen, and about 15% to 20% silicon.

33 . The composition of claim 30 , having a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon.

34 . The composition of claim 30 , having a molar ratio of about 50% to 65% carbon, about 20% to 30% oxygen, and about 15% to 20% silicon.

35 . The composition of claim 29 , wherein the composition is a solid.

36 . The composition of claim 31 , wherein the composition is a solid.

37 . The composition of claim 34 , wherein the composition is a solid.

38 . The composition of claim 29 , wherein the composition is a ceramic.

39 . The composition of claim 31 , wherein the composition is a ceramic.

40 . The composition of claim 34 , wherein the composition is a ceramic.

41 . The composition of claim 29 , wherein the composition is a liquid.

42 . The composition of claim 32 , wherein the composition is a liquid.

43 . A high purity SiOC composition consisting essentially of 1% to 99% silicon, 1% to 99% carbon and 1% to 99% oxygen and a dopant; wherein the dopant is selected to provide an electrical property to a SiC wafer; and wherein the SiOC composition is substantially free from impurities, whereby the composition is at last 99.99% pure.

44 . The composition of claim 43 , wherein the silicon oxycarbide is at least 99.999% pure.

45 . The composition of claim 43 , having a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon.

46 . The composition of claim 43 , having a molar ratio of about 50% to 65% carbon, about 20% to 30% oxygen, and about 15% to 20% silicon.

47 . The composition of claim 43 , having a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon.

48 . The composition of claim 43 , wherein the composition is a solid

49 . The composition of claim 43 , wherein the composition is a ceramic.

50 . The composition of claim 43 , wherein the composition is a liquid.

Assignments (1)
SECURITY INTEREST Recorded Jan 10, 2025
From: PALLIDUS, INC.
To: R&R PALLIDUS HOLDINGS II LLC, AS ADMINISTRATIVE AGENT
Reel/Frame 069818/0486 →