WORDLINE OR PILLAR STATE DETECTION FOR FASTER READ ACCESS TIMES
A memory device includes an array of memory cells associated with multiple wordlines and control logic operatively coupled with the array. The control logic, in performing a read operation, can determine a length of time that a selected wordline, of the multiple wordlines, takes to reach a pass voltage for reading data from a memory cell associated with the selected wordline. The control logic can select a delay time based on whether the length of time is associated with a transient state or a non-transient state. The control logic can read the data from the memory cell associated with the selected wordline after the selected delay time.
1 . A memory device comprising:
an array of memory cells associated with multiple wordlines; and
control logic operatively coupled with the array, wherein the control logic, in performing a read operation, is to perform operations comprising:
determining a length of time that a selected wordline, of the multiple wordlines, takes to reach a pass voltage for reading data from a memory cell associated with the selected wordline;
selecting a delay time based on whether the length of time is associated with a transient state or a non-transient state; and
reading the data from the memory cell associated with the selected wordline after the selected delay time.
2 . The memory device of claim 1 , further comprising a counter, wherein tracking the length of time comprises:
starting the counter upon beginning to ramp a voltage of the selected wordline; and
stopping the counter in response to the selected wordline reaching a threshold percentage of the pass voltage.
3 . The memory device of claim 2 , wherein the operations further comprise reading a value of the counter to determine the length of time.
4 . The memory device of claim 1 , wherein the operations further comprise:
comparing the length of time with time period values in a lookup table to determine whether the length of time satisfies at least one of a first threshold criterion or a second threshold criterion that is longer than the first threshold criterion;
in response to the length of time satisfying the first threshold criterion, causing a first delay time to pass before reading the data from the memory cell; and
in response to the length of time satisfying the second threshold criterion, causing a second delay time to pass before reading the data from the memory cell, the second delay time being longer than the first delay time.
5 . The memory device of claim 4 , wherein the first threshold criterion corresponds to a pillar of the array starting at a negative voltage.
6 . The memory device of claim 4 , wherein the second threshold criterion corresponds to a pillar of the array starting at an approximately zero voltage.
7 . The memory device of claim 4 , wherein the operations further comprise, in response to the length of time satisfying a third threshold criterion that is longer than the second threshold criterion, causing a third delay time to pass before reading the data from the memory cell, the third delay time being longer than the second delay time.
8 . The memory device of claim 4 , wherein the second delay time comprises a delay that is caused in response to a first read access of the array after being programmed.
9 . The memory device of claim 4 , wherein the first delay time comprises a delay that is caused in response to read accesses of the array that are subsequent to a first read access of the array after being programmed.
10 . A system comprising:
a memory device comprising an array of memory cells associated with multiple wordlines; and
a processing device operatively coupled with the memory device, the processing device to perform operations comprising:
selecting a delay time, of multiple delay times, based on whether a read operation performed on a memory cell of the array is a first read access of the array since being programmed; and
causing control logic of the memory device to wait the selected delay time after a selected wordline of the memory cell has reached a pass voltage before reading data from the memory cell.
11 . The system of claim 10 , wherein the delay time is a first delay time, and wherein the operations further comprise:
determining that a second read operation performed on the array is a second read access of the array; and
communicating to the control logic to use a second delay time, of the multiple delay times, after the selected wordline of a selected memory cell has reached the pass voltage and before reading data from the selected memory cell, wherein the second delay time is shorter than the first delay time.
12 . The system of claim 11 , wherein the memory cells of the array are associated with a pillar of the array, the second delay time is associated with a transient state of the pillar, and wherein the operations further comprise:
detecting the pillar exit from the transient state; and
sending, together with a subsequent read operation, a command to the control logic to again use the first delay time.
13 . The system of claim 12 , wherein the detecting the pillar exit from the transient state comprises one of:
detecting a reset of the voltage of the pillar;
detecting the memory device satisfy a threshold temperature; or
detecting a period of time pass that is associated with the pillar returning to an approximately zero voltage.
14 . A method comprising:
determining, by control logic of a memory device that includes an array of memory cells with which are associated with multiple wordlines, a length of time that a selected wordline, of multiple wordlines, takes to reach a pass voltage for reading data from a memory cell associated with the selected wordline to perform a read operation;
selecting, by the control logic, a delay time based on whether the length of time is associated with a transient state or a non-transient state; and
reading the data from the memory cell associated with the selected wordline after the selected delay time.
15 . The method of claim 14 , further comprising:
starting a counter upon beginning to ramp a voltage of the selected wordline;
stopping the counter in response to the selected wordline reaching a threshold percentage of the pass voltage; and
reading a value of the counter to determine the length of time.
16 . The method of claim 14 , further comprising
comparing the length of time with time period values in a lookup table to determine whether the length of time satisfies at least one of a first threshold criterion or a second threshold criterion that is longer than the first threshold criterion;
in response to the length of time satisfying the first threshold criterion, causing a first delay time to pass before reading the data from the memory cell; and
in response to the length of time satisfying the second threshold criterion, causing a second delay time to pass before reading the data from the memory cell, the second delay time being longer than the first delay time.
17 . The method of claim 16 , wherein the first threshold criterion corresponds to a pillar of the array starting at a negative voltage, and wherein the second threshold criterion corresponds to the pillar starting at an approximately zero voltage.
18 . The method of claim 16 , further comprising, in response to the length of time satisfying a third threshold criterion that is longer than the second threshold criterion, causing a third delay time to pass before reading the data from the memory cell, the third delay time being longer than the second delay time.
19 . The method of claim 16 , wherein the second delay time comprises a delay that is caused in response to a first read access of the array after being programmed.
20 . The method of claim 16 , wherein the first delay time comprises a delay that is caused in response to read accesses of the array that are subsequent to a first read access of the array after being programmed.