DETECTION DEVICE
According to an aspect, a detection device includes: a substrate; photoelectric conversion elements arranged on the substrate; transistors that each include a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each photoelectric conversion element; and a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed therebetween. The first electrode includes main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts. The second electrode is formed to have an island pattern for each photoelectric conversion element. The first electrode is located in the same layer as that of the gate electrode. The second electrode is located in the same layer as that of the semiconductor layer.
1 . A detection device comprising:
a substrate;
a plurality of photoelectric conversion elements arranged on the substrate;
a plurality of transistors that each comprise a semiconductor layer, a gate electrode facing the semiconductor layer, and a source electrode coupled to the semiconductor layer and are provided for each of the photoelectric conversion elements; and
a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed between the first electrode and the second electrode, wherein
the first electrode comprises a plurality of main parts that overlap the respective photoelectric conversion elements and a coupling part that couples together adjacent main parts of the main parts,
the second electrode is formed to have an island pattern for each of the photoelectric conversion elements,
the first electrode is located in the same layer as that of the gate electrode, and
the second electrode is located in the same layer as that of the source electrode.
2 . The detection device according to claim 1 , wherein
the first electrode and the second electrode are provided in regions not overlapping the transistors in a plan view, and
the first electrode and the second electrode overlap the photoelectric conversion elements in the plan view.
3 . The detection device according to claim 1 , wherein at least one of the first electrode and the second electrode has a chamfer obtained by chamfering a corner in a plan view.
4 . The detection device according to claim 1 , wherein
the photoelectric conversion elements are arranged in a first direction, and
the coupling part of the first electrode electrically couples together the main parts adjacent in the first direction.
5 . The detection device according to claim 1 , wherein
the first electrode is coupled to a reference potential, and
the second electrode is electrically coupled to the transistors and a corresponding one of the photoelectric conversion elements.
6 . The detection device according to claim 1 , wherein
the transistors comprise a source follower transistor, a reset transistor, and a read transistor, and
the second electrode is electrically coupled to one of a source and a drain of the reset transistor, and to a gate of the source follower transistor.
7 . The detection device according to claim 1 , wherein each of the photoelectric conversion elements comprises an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer stacked on the substrate.
8 . A detection device comprising:
a substrate;
a plurality of photoelectric conversion elements arranged on the substrate;
a plurality of transistors provided for each of the photoelectric conversion elements; and
a first electrode and a second electrode that are provided in regions overlapping the transistors and a corresponding one of the photoelectric conversion elements in a plan view and face each other with an insulating film interposed between the first electrode and the second electrode in a direction orthogonal to the substrate, wherein
the first electrode is provided on the upper side of the photoelectric conversion element, and
the second electrode is provided above the first electrode with the insulating film interposed between the first electrode and the second electrode.
9 . The detection device according to claim 8 , further comprising:
an organic insulating film that covers the transistors; and
a lower electrode that is provide between the organic insulating film and a corresponding one of the photoelectric conversion elements in the direction orthogonal to the substrate, and is electrically coupled to the photoelectric conversion element, wherein
the second electrode extends to a region overlapping none of the photoelectric conversion elements and is electrically coupled to the lower electrode through a contact hole that passes through the insulating film.
10 . The detection device according to claim 8 , further comprising:
a plurality of signal lines and a plurality of scan lines that are coupled to the transistors;
a plurality of the first electrodes; and
a plurality of the second electrodes, wherein
a plurality of regions are provided each of which is surrounded by the signal lines and the scan lines, and
each region surrounded by the signal lines and the scan lines is provided with one of the photoelectric conversion elements, one of the first electrodes, and one of the second electrodes.
11 . The detection device according to claim 8 , wherein
the first electrode is coupled to a reference potential, and
the second electrode is electrically coupled to the transistors and a corresponding one of the photoelectric conversion elements.
12 . The detection device according to claim 8 , wherein
the transistors comprise a source follower transistor, a reset transistor, and a read transistor, and
the second electrode is electrically coupled to one of a source and a drain of the reset transistor, and to a gate of the source follower transistor.
13 . The detection device according to claim 8 , wherein each of the photoelectric conversion elements comprises an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer stacked on the substrate.