OPTOELECTRONIC DEVICE

1 . An optoelectronic device, including:

a semiconductor stack including a first semiconductor layer, an active layer, and a second semiconductor layer;

a contact electrode formed on the second semiconductor layer;

an insulating reflective structure covering the contact electrode, and including a plurality of insulating reflective structure openings to expose the contact electrode;

a metal reflective structure covering the plurality of insulating reflective structure openings, and electrically connected to the contact electrode;

an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure;

a first extension electrode covering the semiconductor stack and the one or more first insulating structure openings to electrically connect to the first semiconductor layer; and

a second extension electrode covering the semiconductor stack and the one or more second insulating structure openings to electrically connect to the metal reflective structure, wherein in a top view of the optoelectronic device, the one or more second insulating structure openings is formed at a position within a polygon constituted by the plurality of insulating reflective structure openings.

2 . The optoelectronic device according to claim 1 , wherein the contact electrode includes indium tin oxide (ITO), zinc doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine doped tin oxide (FTO)), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), or zinc magnesium oxide (Zn (1−x) Mg x O, 0≤x≤1).

3 . The optoelectronic device according to claim 2 , further including a connecting layer covering the plurality of insulating reflective structure openings, wherein the connecting layer includes titanium (Ti), aluminum oxide (Al 2 O 3 ), indium tin oxide (ITO), zinc doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), or zinc magnesium oxide (Zn (1−x) Mg x O, 0≤x≤1).

4 . The optoelectronic device according to claim 3 , wherein the connecting layer includes a thickness smaller than that of the contact electrode.

5 . The optoelectronic device according to claim 3 , wherein the contact electrode and the connecting layer include a same material.

6 . The optoelectronic device according to claim 3 , wherein the contact electrode and the connecting layer include different materials.

7 . The optoelectronic device according to claim 1 , wherein the polygon includes a triangle, a rectangle, a pentagon, or a hexagon.

8 . The optoelectronic device according to claim 7 , wherein the position is located on an incenter, a circumcenter, an orthocenter, or a centroid of the triangle.

9 . The optoelectronic device according to claim 7 , wherein the triangle is an equilateral triangle.

10 . The optoelectronic device according to claim 1 , wherein the one or more second insulating structure openings includes a width not greater than a width of each of the plurality of insulating reflective structure openings.

11 . The optoelectronic device according to claim 1 , wherein the one or more second insulating structure openings each includes a width greater than that of each of the plurality of the insulating reflective structure openings.

12 . The optoelectronic device according to claim 1 , further including a protective structure formed on the first extension electrode and the second extension electrode, wherein the protective structure includes a protective structure first opening formed on the first extension electrode and a protective structure second opening formed on the second extension electrode.

13 . The optoelectronic device according to claim 12 , further including a first electrode pad formed on the protective structure first opening and a second electrode pad formed on the protective structure second opening.

14 . The optoelectronic device according to claim 13 , wherein the one or more second insulating structure openings are located in an area outside a projected area of the second electrode pad, and is covered by the second extension electrode.

15 . The optoelectronic device according to claim 13 , wherein the one or more second insulating structure openings are arranged along the second electrode pad.

16 . The optoelectronic device according to claim 13 , wherein the one or more second insulating structure openings are formed on two opposite sides of the second electrode pad.

17 . The optoelectronic device according to claim 13 , wherein the plurality of first insulating structure openings is located in an area outside a projected area of the first electrode pad and is covered by the first extension electrode.

18 . The optoelectronic device according to claim 13 , wherein the plurality of insulating reflective structure openings includes a first group of openings formed under the first electrode pad, and a second group of openings formed under the second electrode pad, wherein any two adjacent openings of the first group of openings are separated by a first minimum distance, any two adjacent openings of the second group of the openings are separated by a second minimum distance, the first minimum distance is greater than the second minimum distance.

19 . The optoelectronic device according to claim 18 , further includes one or more through holes penetrating through the active layer and the second semiconductor layer, and exposing the first semiconductor layer, wherein the plurality of insulating reflective structure openings surrounds the one or more through holes with a minimum distance, and the minimum distance is greater than the first minimum distance or the second minimum distance.

20 . The optoelectronic device according to claim 19 , wherein the one or more through holes include a first group of through holes surrounded by the first electrode pad, a second group of through holes surrounded by the second electrode pad, or both.