DIE CLEANING SYSTEMS AND RELATED METHODS
Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.
1 . A method of forming a plurality of semiconductor die, the method comprising:
forming a damage layer beneath a surface of a die street in a semiconductor substrate using a laser;
ablating only a portion of material of the die street using the laser;
singulating the semiconductor substrate into a plurality of semiconductor die through stealth dicing along the die street;
immersing the plurality of semiconductor die in a liquid; and
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die while immersed;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.
2 . The method of claim 1 , wherein the semiconductor substrate is silicon carbide.
3 . The method of claim 1 , wherein forming a damage layer further comprises irradiating the die street with a laser beam at a focal point within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street to form the damage layer.
4 . The method of claim 1 , wherein forming a damage layer further comprises:
irradiating the die street with a laser beam at a focal point at a first depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street; and
irradiating the die street with a laser beam at a focal point at a second depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street.
5 . The method of claim 4 , wherein the first depth is deeper than the second depth.
6 . The method of claim 5 , wherein irradiating the die street at the first depth is prior to irradiating the die street at the second depth.
7 . The method of claim 1 , wherein the sonic energy is applied to the spindle after singulating the semiconductor substrate.
8 . The method of claim 1 , wherein applying sonic energy further comprises applying sonic energy between 20 kHz to 3 GHz.
9 . A method of forming a plurality of semiconductor die, the method comprising:
irradiating a semiconductor substrate with a laser beam at a focal point below a die street to form a damage layer;
scribing the semiconductor substrate along the die street using a stylus;
stealth dicing the semiconductor substrate along the die street into a plurality of semiconductor die;
immersing the plurality of die in a liquid; and
removing one or more particulates in the die street after sawing through applying sonic energy to the plurality of semiconductor die while immersed;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.
10 . The method of claim 9 , wherein applying sonic energy further comprises applying sonic energy between 20 kHz to 3 GHz.
11 . The method of claim 9 , wherein the semiconductor substrate is silicon carbide.
12 . The method of claim 9 , wherein scribing the semiconductor substrate forms a crack that propagates only partially through the die street.
13 . The method of claim 9 , wherein irradiating the semiconductor substrate further comprises:
irradiating the die street with a laser beam at a focal point at a first depth within the semiconductor substrate at one or more spaced apart locations beneath a surface of the die street; and
irradiating the die street with a laser beam at a focal point at a second depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street.
14 . A method of forming a plurality of semiconductor die, the method comprising:
singulating a silicon carbide semiconductor substrate along a die street into a plurality of semiconductor die using stealth dicing;
immersing the plurality of die in a liquid;
applying sonic energy to the silicon carbide semiconductor substrate, while immersed, through directly applying sonic energy to a spindle coupled with a chuck, the chuck coupled to the silicon carbide semiconductor substrate; and
removing one or more particulates in the die street after singulating the silicon carbide semiconductor substrate through applying sonic energy to the plurality of semiconductor die.
15 . The method of claim 14 , wherein applying sonic energy further comprises applying sonic energy between 20 kHz to 3 GHz.
16 . The method of claim 14 , wherein the sonic energy is megasonic energy.
17 . The method of claim 14 , wherein applying sonic energy further comprises applying sonic energy at 40 KHz.
18 . The method of claim 14 , wherein stealth dicing further comprises forming a damaged layer within the die street.
19 . The method of claim 14 , wherein stealth dicing may further include coupling the silicon carbide semiconductor substrate to a tape expander.
20 . The method of claim 19 , further comprising expanding the silicon carbide semiconductor substrate with the tape expander to complete singulating of the plurality of semiconductor die.