SEMICONDUCTOR NANOPARTICLE, METHOD OF PRODUCING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME

1 . A semiconductor nanoparticle comprising silver, indium, gallium, and sulfur, wherein in the semiconductor nanoparticle, a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1, a mole ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1,

wherein the semiconductor nanoparticle is configured to emit light, and a full width at half maximum of a luminescent spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

2 . The semiconductor nanoparticle of claim 1 , wherein

the semiconductor nanoparticle comprises a first semiconductor nanocrystal comprising silver, indium, gallium, and sulfur, and a second semiconductor nanocrystal comprising silver, gallium, and sulfur.

3 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, the mole ratio of gallium to indium is greater than or equal to about 10.5:1 and less than or equal to about 37:1, and the mole ratio of silver to indium is greater than or equal to about 7:1 and less than or equal to about 25:1.

4 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, the mole ratio of gallium to indium is greater than or equal to about 15:1 and less than or equal to about 35:1, and the mole ratio of silver to indium is greater than or equal to about 10:1 and less than or equal to about 17:1.

5 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, a mole ratio of a sum of indium and gallium to silver [(In+Ga):Ag] is greater than or equal to about 1.3:1, and less than or equal to about 1.65:1.

6 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, a mole ratio of indium to sulfur (In:S) is greater than or equal to about 0.005:1 and less than about 0.1:1, or

a mole ratio of gallium to sulfur (Ga:S) is greater than or equal to about 0.3:1 and less than or equal to about 0.55:1, or

a mole ratio of silver to sulfur (Ag:S) is greater than or equal to about 0.33:1 and less than or equal to about 0.45:1.

7 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, a mole ratio of silver to a sum of silver, indium, and gallium [Ag:(Ag+In+Ga)] is greater than or equal to about 0.31:1 and less than or equal to about 0.42:1, or

a mole ratio of sulfur to a sum of silver, indium, and gallium [S:(Ag+In+Ga)] is greater than or equal to about 0.8:1 and less than or equal to about 1.12:1.

8 . The semiconductor nanoparticle of claim 1 , wherein

in the semiconductor nanoparticle, the mole ratio of gallium to indium is greater than or equal to about 20:1.

9 . The semiconductor nanoparticle of claim 1 , wherein

the semiconductor nanoparticle has a peak emission wavelength of greater than or equal to about 500 nm and less than or equal to about 580 nm, and a quantum efficiency of greater than or equal to about 40%.

10 . The semiconductor nanoparticle of claim 1 , wherein

in an ultraviolet-visible absorption spectroscopy, the semiconductor nanoparticle exhibits a ratio of absorption at 350 nanometers to absorption at 370 nanometers that is greater than or equal to about 0.1:1 and less than or equal to about 1.2:1

11 . A method of preparing the semiconductor nanoparticle of claim 1 , the method comprising

combining a first semiconductor nanocrystal comprising, silver, a group 13 element, and a chalcogen element,

a sulfur precursor,

a gallium precursor comprising gallium bromide,

optionally, an organic ligand, a silver compound, or a combination thereof, and a medium comprising an organic solvent to provide a reaction mixture; and

heating the reaction mixture to provide the semiconductor nanoparticle.

12 . The method of claim 11 , wherein the method further comprises adding a silver compound to the medium.

13 . The method of claim 12 , wherein the silver compound is added to the medium in an amount of greater than or equal to about 1 mole percent and less than or equal to about 50 mole percent.

14 . The method of claim 12 , wherein the silver compound comprises a silver carboxylate, a silver acetylacetonate, a silver halide, or a combination thereof.

15 . An ink composition, comprising:

the semiconductor nanoparticle of claim 1 , and a liquid vehicle.

16 . A semiconductor nanoparticle composite, wherein the semiconductor nanoparticle composite comprises a matrix and the semiconductor nanoparticle of claim 1 dispersed in the matrix.

17 . The semiconductor nanoparticle composite of claim 16 , wherein

a semiconductor nanoparticle-polymer composite exhibits an internal quantum efficiency of greater than or equal to about 50% and the internal quantum efficiency is defined by Equation 2:

Internal

⁢

quantum

⁢

efficiency

⁢

(

%

)

=

[

A

/

(

B

-

B

′

)

]

×

100

Equation

⁢

2

wherein:

A: amount of a first light emitted from the semiconductor nanoparticle-polymer composite

B: amount of irradiated incident light

B′: amount of the irradiated incident light passing through the semiconductor nanoparticle-polymer composite.

18 . A color conversion structure, wherein the color conversion structure comprises a color conversion layer comprising a color conversion region and, optionally, a partition wall defining each region of the color conversion layer, wherein the color conversion region comprises a first region corresponding to a first pixel, and the first region comprises the semiconductor nanoparticle of claim 1 .

19 . An electronic device, comprising the semiconductor nanoparticle of claim 1 .