LIGHT-EMITTING DEVICE
A light-emitting device includes a first semiconductor layer; an active layer on the first semiconductor layer and having an upmost surface with a first width; and a second semiconductor layer on the active layer and having a bottommost surface with a second width less than the active layer.
1 . A semiconductor device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer and having an upmost surface with a first width; and
a second semiconductor layer on the active layer and having a bottommost surface with a second width less than the active layer.
2 . The semiconductor device according to claim 1 , wherein the active layer comprises a well layer and the well layer comprises the upmost surface.
3 . The semiconductor device according to claim 1 , wherein the active layer comprises a barrier layer and the barrier layer comprises the upmost surface.
4 . The semiconductor device according to claim 1 , wherein the upmost surface directly contacts the bottommost surface.
5 . The semiconductor device according to claim 1 , wherein the second semiconductor layer comprises a circle, an ellipse, a rectangle, or a polygon in a top view.
6 . The semiconductor device according to claim 1 , wherein the active layer and the semiconductor layer have the same shape in a top view.
7 . A semiconductor device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer and having an upmost surface with a first width; and
a plurality of second semiconductor layers on the active layer and each of which has a bottommost surface with a second width less than the active layer.
8 . The semiconductor device according to claim 7 , wherein the plurality of second semiconductor layers is separated from each other.
9 . The semiconductor device according to claim 7 , wherein the active layer and the semiconductor layer has different shape in a top view.
10 . A semiconductor device, comprising:
a first semiconductor layer; and
a plurality of semiconductor pillars formed on the first semiconductor layer, each of which comprises an active layer and a second semiconductor layer,
wherein the active layer has an upmost surface with a first width, and the second semiconductor layer on the active layer and has a bottommost surface with a second width less than the active layer.
11 . The semiconductor device according to claim 10 , further comprising a first contact on the first semiconductor layer.
12 . The semiconductor device according to claim 11 , wherein each of the plurality of semiconductor pillars further has a second contact layer on the second semiconductor layer.
13 . The semiconductor device according to claim 10 , further comprising an electrode contact layer connected to the second contact layers of each of the plurality of semiconductor pillars.
14 . The semiconductor device according to claim 10 , wherein the upmost surface directly contacts the bottommost surface.