IP Library › Patent Application 19044327
Patent Application
App. No. 19/044,327

HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICATIONS AND PROCESSES

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Quick Facts
Patent No.
US None
App. No.
19/044,327
Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Claims (16)

1 - 5 . (canceled)

6 . A semiconductor comprising an SiC wafer made from the high purity polymer derived ceramic SiC composition of claim 1 having a band gap, wherein the band gap is from about 2.26 eV to about 3.33 eV.

7 . A semiconductor comprising an SiC wafer made from the high purity polymer derived ceramic SiC composition of claim 1 having a band gap, wherein the band gap is greater than about 2.20 eV.

8 . A semiconductor comprising an SiC wafer made from the high purity polymer derived ceramic SiC composition of claim 2 having a band gap, wherein the band gap is from about 2.26 eV to about 3.33 eV.

9 . (canceled)

10 . (canceled)

11 . (canceled)

12 . (canceled)

13 . (canceled)

14 . An article made from the high purity polymer derived ceramic SiC composition of claim 1 , having a thermal conductivity, the thermal conductivity being greater than about 4.0 W/(cm-K) at room temperature.

15 . An article made from the high purity polymer derived ceramic SiC composition of claim 1 , having a thermal conductivity, the thermal conductivity being greater than about 4.5 W/(cm-K) at room temperature.

16 - 81 . (canceled)

82 . A high purity polysilocarb derived ceramic SiC powder, the powder comprising:

a. silicon carbide;

b. the powder having an average diameter of less than 500 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure; and,

c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.