SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a substrate and a semiconductor stack. The substrate has a first surface and a second surface, the first surface has a first protruding unit and a second protruding unit which are arranged in a horizontal direction, and the second surface has a third protruding unit and a fourth protruding unit which are arranged in the horizontal direction. In a vertical direction perpendicular to the horizontal direction, the first protruding unit overlaps the third protruding unit, and the second protruding unit overlaps the fourth protruding unit. The semiconductor stack connects to the first surface. If the second surface is irradiated by a light beam which is parallel to the vertical direction, the light beam is capable of substantially forming a uniform energy distribution on the first surface.
1 . A semiconductor structure, comprising:
a substrate, having a first surface and a second surface opposite to the first surface, wherein the first surface has a first protruding unit and a second protruding unit which are arranged in a horizontal direction, and the second surface has a third protruding unit and a fourth protruding unit which are arranged in the horizontal direction, in a vertical direction perpendicular to the horizontal direction, the first protruding unit overlaps the third protruding unit, and the second protruding unit overlaps the fourth protruding unit; and
a semiconductor stack, connected to the first surface;
wherein, if the second surface is irradiated by a light beam which is parallel to the vertical direction, the light beam is capable of substantially forming a uniform energy distribution on the first surface.
2 . The semiconductor structure of claim 1 , wherein the light beam is capable of substantially forming a uniform energy distribution on the second surface.
3 . The semiconductor structure of claim 1 , wherein the first protruding unit and the second protruding unit are separated by a first distance in the horizontal direction, and the third protruding unit and the fourth protruding unit are separated by a second distance in the horizontal direction, and the first distance is substantially equal to the second distance.
4 . The semiconductor structure of claim 1 , wherein the first protruding unit and the third protruding unit have tops overlapping with each other in the vertical direction.
5 . The semiconductor structure of claim 1 , wherein the substrate has a first depression and a second depression, the first depression is located between the first protruding unit and the second protruding unit, the second depression is located between the third protruding unit and the fourth protruding unit, and the first depression overlaps the second depression in the vertical direction.
6 . The semiconductor structure of claim 1 , wherein the first protruding unit has a first inclined surface and a second inclined surface, the second protruding unit has a third inclined surface and a fourth inclined surface, in the vertical direction, the first inclined surface overlaps the third inclined surface, and the second inclined surface overlaps the fourth inclined surface.
7 . The semiconductor structure of claim 6 , wherein the light beam comprises a first sub-beam and a second sub-beam, the first sub-beam enters the substrate via the fourth inclined surface and is refracted to the first inclined surface, and the second sub-beam enters the substrate via the third inclined surface and is refracted to the second inclined surface.
8 . The semiconductor structure of claim 7 , wherein the first sub-beam enters the fourth inclined surface by a fourth incident angle and exits the first inclined surface by a first incident angle, the second sub-beam enters the third inclined surface by a third incident angle and exits the second inclined surface by a second incident angle, the first incident angle is smaller than the fourth incident angle, and the second incident angle is smaller than the third incident angle.
9 . The semiconductor structure of claim 8 , wherein the first incident angle and the second incident angle are less than 10 degrees.
10 . The semiconductor structure of claim 7 , wherein the first sub-beam and the second sub-beam intersect with each other in the substrate.
11 . The semiconductor structure of claim 1 , wherein, in a cross-sectional view, the first protruding unit and the third protruding unit have different contours.
12 . The semiconductor structure of claim 1 , wherein the third protruding unit has a top with a flat surface parallel to the horizontal direction.
13 . The semiconductor structure of claim 1 , wherein, in the vertical direction, the first protruding unit has a first height, the third protruding unit has a second height, the first height is different from the second height.
14 . The semiconductor structure of claim 13 , wherein the first height is greater than the second height.
15 . The semiconductor structure of claim 1 , wherein, in the horizontal direction, the first protruding unit has a first width, the third protruding unit has a second width, the first width is different from the second width.
16 . The semiconductor structure of claim 15 , wherein the first width is smaller than the second width.