LIGHT-EMITTING DEVICE
A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.
1 . A light-emitting device, comprising:
a semiconductor stack emitting a light with a peak wavelength λ; and
a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers which are alternately stacked, and a space layer located between two adjacent ones of the plurality of first layers or two adjacent ones of the plurality of second layers;
wherein the space layer comprises an optical thickness of even multiple of 0.25λ+/−0.025λ.
2 . The light-emitting device according to claim 1 , wherein the plurality of first layers comprises TiO x , HfO 2 , ZnO, La 2 O 3 , CeO 2 , ZrO 2 , ZnSe, Si 3 N 4 , Nb 2 O 5 or Ta 2 O 5 , and the plurality of second layers comprises SiO 2 , LaF 3 , MgF 2 , NaF, Na 3 AlF 6 , CaF 2 or AlF 3 .
3 . The light-emitting device according to claim 1 , wherein the space layer is located between the two adjacent ones of the plurality of second layers, and the space layer comprises TiO x , HfO 2 , ZnO, La 2 O 3 , CeO 2 , ZrO 2 , ZnSe, Si 3 N 4 , Nb 2 O 5 or Ta 2 O 5 .
4 . The light-emitting device according to claim 1 , wherein the space layer is located between the two adjacent ones of the plurality of first layers, and the space layer comprises SiO 2 , LaF 3 , MgF 2 , NaF, Na 3 AlF 6 , CaF 2 or AlF 3 .
5 . The light-emitting device according to claim 1 , wherein one of the plurality of first layers comprises an optical thickness of 0.25λ+/−0.025λ.
6 . The light-emitting device according to claim 1 , wherein one of the plurality of second layers comprises an optical thickness of 0.25λ+/−0.025λ.
7 . The light-emitting device according to claim 1 , wherein the space layer comprises an optical thickness of 0.5λ+/−0.05λ.
8 . The light-emitting device according to claim 1 , further comprises a substrate, the semiconductor stack is formed between the light field adjustment layer and the substrate.
9 . The light-emitting device according to claim 8 , wherein the substrate is a transparent substrate.
10 . The light-emitting device according to claim 1 , further comprising a protective layer covering the semiconductor stack, and comprising a Distributed Bragg Reflector (DBR) structure.
11 . The light-emitting device according to claim 1 , wherein the space layer comprises an optical thickness of λ+/−0.1λ.
12 . A light-emitting module comprising:
a light emitting apparatus comprising:
a board; and
a light-emitting device of claim 1 on the board.
13 . The light-emitting module according to claim 12 , further comprising a wavelength conversion structure disposed on the light-emitting apparatus.
14 . A display comprising:
a LED panel comprising a first light-emitting device of claim 1 , a second light-emitting device and a third light-emitting device.
15 . The display according to claim 14 , wherein the first light-emitting device, the second light-emitting device and the third light-emitting device emit different colors.