Plasma Strip Tool With Movable Insert
Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing a workpiece includes a processing chamber, a plasma chamber separated from the processing, and an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus includes an insert disposed in the plasma chamber movable to one or more vertical positions within the plasma chamber. Methods for processing of workpieces are also provided.
1 . A plasma processing apparatus for processing a workpiece, the plasma processing apparatus comprising:
a processing chamber;
a plasma chamber separated from the processing chamber, the plasma chamber comprising a dielectric sidewall and a ceiling;
an inductively coupled plasma source configured to generate a plasma in the plasma chamber;
a pedestal disposed within the processing chamber, the pedestal configured to support a workpiece;
an insert disposed in the plasma chamber, the insert movable to one or more vertical positions within the plasma chamber, wherein the insert is a tubular insert having a first closed end and a second open end, wherein the first closed end is disposed within the plasma chamber and the second open end is open to atmosphere; and
a control system communicatively coupled to the insert to move the insert to one or more vertical positions within the plasma chamber.
2 . The plasma processing apparatus of claim 1 , wherein the insert has a diameter (D 1 ) that is less than a diameter (D 2 ) of the processing chamber.
3 . The plasma processing apparatus of claim 2 , wherein a vacuum space with a radial thickness is defined between the insert and an inner wall of the plasma chamber, wherein the radial thickness is a difference between diameter (D 2 ) and diameter (D 1 ).
4 . The plasma processing apparatus of claim 3 , wherein the radial thickness is from about 5 mm to about 150 mm.
5 . The plasma processing apparatus of claim 1 , wherein the insert can be moved to a vertical position to adjust process uniformity during workpiece processing.
6 . The plasma processing apparatus of claim 1 , wherein the insert can be moved to a vertical position to adjust efficiency during workpiece processing.
7 . The plasma processing apparatus of claim 1 , wherein the insert can be moved to a vertical position to increase ash rate during workpiece processing.
8 . The plasma processing apparatus of claim 1 , wherein the insert comprises quartz or ceramic material.
9 . The plasma processing apparatus of claim 1 , wherein the control system is further configured to adjust the vertical position of the insert according to a control parameter input to the control system.
10 . The plasma processing apparatus of claim 1 , wherein a first closed end of the insert can have a vertical position as low as about 1 mm from a top surface of a separation grid, the separation grid separating the processing chamber from the plasma chamber.
11 . The plasma processing apparatus of claim 1 , wherein a first closed end of the insert can have a vertical position as high as about 100 mm above a top end of the inductively coupled plasma source.
12 . The plasma processing apparatus of claim 1 , wherein the insert is disposed within in the plasma chamber such that the plasma chamber remains under vacuum.
13 . The plasma processing apparatus of claim 1 , wherein one or more bellows are used to move the insert to one or more vertical positions in the plasma chamber.
14 . The plasma processing apparatus of claim 1 , wherein a second open end of the insert is coupled to one or more holding devices disposed on one or more bellows for moving the insert.
15 . The plasma processing apparatus of claim 1 , wherein one or more shims are disposed between a second open end of the insert and one or more holding devices.
16 . The plasma processing apparatus of claim 1 , further comprising a gas injection insert disposed in a center of the insert for delivering forced air towards a first closed end of the insert for cooling the insert.
17 . A method for processing a workpiece in a plasma processing apparatus, the plasma processing apparatus having a plasma chamber and a processing chamber, the processing chamber having a workpiece support, the processing chamber having an insert disposed therein movable to one or more vertical positions within the plasma chamber, the plasma chamber comprising a dielectric sidewall and a ceiling, the method comprising:
admitting a process gas to the plasma chamber;
generating one or more species from the process gas using a plasma induced in a plasma chamber;
moving the insert from a first vertical position to a second vertical position within the plasma chamber with a control system communicatively coupled to the insert, wherein the insert is a tubular insert having a first closed end and a second open end, wherein the first closed end is disposed within the plasma chamber and the second open end is open to atmosphere;
filtering the one or more species to generate a filtered mixture; and
exposing the workpiece to the filtered mixture to process the workpiece.
18 . The method of claim 17 , wherein the insert has a diameter (D 1 ) that is less than a diameter (D 2 ) of the processing chamber.
19 . The method of claim 18 , wherein a vacuum space with a radial thickness is defined between the insert and an inner wall of the plasma chamber, wherein the radial thickness is a difference between diameter (D 2 ) and diameter (D 1 ).
20 . The method of claim 17 , wherein the insert can be moved to a vertical position to adjust process uniformity during workpiece processing.