HIGH DENSITY MULTI-POLED THIN FILM PIEZOELECTRIC DEVICES AND METHODS OF MAKING THE SAME

1 . A method for producing multi-poled piezoelectric devices from a first piezoelectric device, the method comprising:

a) providing a first piezoelectric device, the first piezoelectric device comprising: a first bottom electrode, a first piezoelectric layer, a first top electrode, and a first substrate;

b) separating the first piezoelectric device into a plurality of piezoelectric devices by etching one or more of the first bottom electrode, the first piezoelectric layer, or the first top electrode, wherein each of the plurality of piezoelectric devices comprises a bottom electrode, a piezoelectric layer, and a top electrode;

c) generating one or more vertical interconnect access (vias) by etching the first piezoelectric layer, the first top electrode, or both; and

d) depositing a re-distribution layer (RDL) over the first piezoelectric device, the one or more vias, or both.

2 . The method of claim 1 , wherein step b) comprises: i) etching the first top electrode to generate a plurality of top electrodes; ii) subsequent to step i), etching the first piezoelectric layer to generate a plurality of piezoelectric layers; and iii) subsequent to step ii), etching the first bottom electrode to generate a plurality of bottom electrodes of the plurality of piezoelectric devices.

3 . The method of claim 2 , wherein step b) further comprises patterning using a photoresist in one or more of steps i), ii), or iii) for etching.

4 . The method of claim 3 , wherein step iii) is without removal of the photoresist in step ii).

5 . The method of claim 3 , further comprising: subsequent to step b) and prior to step c), removing the photoresist.

6 . The method of claim 1 , wherein step d) comprises: i) depositing a RDL dielectric layer over the first piezoelectric device; and ii) depositing a RDL conductor layer over the RDL dielectric layer.

7 . The method of claim 6 , wherein step d) further comprises: subsequent to step i) and prior to step ii), etching and patterning the RDL dielectric layer; subsequent to step ii), etching and patterning the RDL conductor layer, or both.

8 . The method of claim 1 , wherein step c) comprises:

i) depositing a photoresist over the first piezoelectric device;

a) ii) etching the first piezoelectric layer to a pre-determined depth;

b) iii) etching through the first piezoelectric layer from the pre-determined depth to stop at a top surface of the first bottom electrode along a vertical direction; and iv) removing the photoresist from the first piezoelectric device.

9 . The method of claim 8 , wherein the first piezoelectric layer comprises a stepped profile along a vertical direction configured to mitigate issues in topography of the vias.

10 . The method of claim 8 , the pre-determined depth is less than a full depth of the piezoelectric layer along a vertical direction.

11 . The method of claim 8 , wherein performing steps a) through d) decreases a characteristic length of the one or more vias along a horizontal direction thereby increasing packing density of the plurality of piezoelectric devices.

12 . The method of claim 1 , wherein step c) comprises:

i) depositing a photoresist over the first piezoelectric device;

a) ii) etching the first piezoelectric layer using isotropic etch; and

b) iii) removing the photoresist.

13 . A method for producing multi-poled piezoelectric devices, the method comprising: a) providing a first piezoelectric device, the first piezoelectric device comprising:

a first bottom electrode, a first piezoelectric layer, a first top electrode, and a first substrate;

a) b) etching the first top electrode;

b) depositing a RDL dielectric layer over the first top electrode;

c) etching the RDL dielectric layer using anisotropic etch; e) etching the first piezoelectric layer using anisotropic etch; and

d) f) depositing a RDL conductor layer over the RDL dielectric layer.

14 . The method of claim 13 , further comprising depositing a photoresist subsequent to step c) and prior to step d); and removing the photo resist prior to step f).