DISPLAY PANELS WITH AN INTEGRATED OFF-AXIS MICRO-LENS ARRAY
A light emitting structure array system with a micro-lens array structure includes a first light emitting mesa, which includes a light emitting layer, a bottom bonding layer, a top electrode layer, and an insulation layer. The bottom bonding layer is at a bottom of the light emitting layer and bonded with the semiconductor substrate. The top electrode layer covers the first light emitting mesa and electrically connected with a reflective cup surrounding the first light emitting mesa. The reflective cup is electrically connected with a semiconductor substrate. The insulation layer covers a side wall of the light emitting layer. The light emitting structure array system with a micro-lens array structure further includes a first micro-lens formed above the light emitting mesa. A central axis of the first micro-lens is coaxially aligned with a central axis of the first light emitting mesa.
1 . A light emitting structure array system with a micro-lens array structure comprising:
a first light emitting mesa on a semiconductor substrate, including:
a light emitting layer;
a bottom bonding layer, at a bottom of the light emitting layer and bonded with a semiconductor substrate;
a top electrode layer, covering the first light emitting mesa and electrically connected with a reflective cup surrounding the first light emitting mesa, wherein the reflective cup is electrically connected with the semiconductor substrate; and
an insulation layer covering a side wall of the light emitting layer; and
a first micro-lens, formed above the first light emitting mesa, wherein a central axis of the first micro-lens is coaxially aligned with a central axis of the first light emitting mesa.
2 . The light emitting structure array system according to claim 1 , wherein the top electrode layer is in electrical contact with at least a portion of a top surface of the light emitting layer.
3 . The light emitting structure array system according to claim 2 , wherein a top surface of the insulation layer is flush with the top surface of the light emitting layer.
4 . The light emitting structure array system according to claim 2 , wherein a top surface of the insulation layer is higher than the top surface of the light emitting layer.
5 . The light emitting structure array system according to claim 4 , wherein the insulation layer covers at least a portion of the top surface of the light emitting layer.
6 . The light emitting structure array system according to claim 4 , wherein the insulation layer does not cover at least a portion of the top surface of the light emitting layer.
7 . The light emitting structure array system according to claim 1 , further comprising a sensor, wherein emitting light rays from the first light emitting mesa through the first micro-lens are converted together into the sensor.
8 . The light emitting structure array system according to claim 2 , wherein a sensor is arranged at a central axis of the light emitting structure array system.
9 . The light emitting structure array system according to claim 2 , wherein a sensor is not arranged at a central axis of the light emitting structure array system.
10 . The light emitting structure array system according to claim 1 , wherein a material of the first micro-lens is silicon oxide or organic materials.
11 . The light emitting structure array system according to claim 1 , wherein an inside wall of the reflective cup is stair-shaped.
12 . The light emitting structure array system according to claim 1 , wherein an inside wall of the reflective cup comprises a plurality of sidewalls at different angles.
13 . The light emitting structure array system according to claim 1 , further comprising a spacer, formed between the first light emitting mesa and the first micro-lens.
14 . The light emitting structure array system according to claim 13 , wherein a height of the spacer is less than height of the first micro-lens.
15 . The light emitting structure array system according to claim 1 , wherein the semiconductor substrate is an IC substrate.
16 . The light emitting structure array system according to claim 1 , further comprises a second light emitting mesa and a corresponding second micro-lens, wherein a relative position of the first micro-lens relative to the first light emitting mesa is different from a relative position of the second micro-lens relative to the corresponding second light emitting mesa.
17 . The light emitting structure array system according to claim 16 , wherein a bottom surface of the second micro-lens intersects with a central axis of the corresponding second light emitting mesa.
18 . The light emitting structure array system according to claim 16 , wherein material of the first micro-lens is as same as material of the second micro-lens.
19 . The light emitting structure array system according to claim 1 , wherein the bottom bonding layer is a metal layer.
20 . The light emitting structure array system according to claim 1 , wherein the top electrode layer is a conductive transparent layer.
21 . The light emitting structure array system according to claim 1 , wherein the insulation layer is made of dielectric materials.
22 . The light emitting structure array system according to claim 13 , wherein material of the spacer is as the same as material of the first micro-lens.
23 . A method of fabricating a display panel integrated with a micro-lens array, comprising:
providing a substrate;
forming a plurality of pixel light sources including at least one mesa on the substrate;
depositing a micro-lens material layer directly on the plurality of pixel light sources, wherein the micro-lens material layer covers a top of the plurality of pixel light sources and a top surface of the micro-lens material layer is flat; and
performing a patterning process including patterning the micro-lens material layer from top down, thereby forming the micro-lens array including a plurality of hemispheres in the micro-lens material layer, wherein the plurality of hemispheres are placed above the plurality of pixel light sources.
24 . The method of claim 23 , wherein the micro-lens material layer is deposited by spin coating.
25 . The method of claim 23 , further comprising: after forming the plurality of pixel light sources and before depositing the micro-lens material layer, forming a mark layer with marks for aligning to the micro-lens material layer in the patterning process.
26 . The method of claim 23 , further comprising: patterning the micro-lens material layer to expose an electrode area of the substrate.
27 . The method of claim 23 , further comprising:
depositing a mask layer on the top surface of the micro-lens material layer;
patterning the mask layer to form a hemisphere pattern in the mask layer; and
using the hemisphere pattern as a mask, etching the micro-lens material layer to form the plurality of hemispheres in the micro-lens material layer.
28 . The method of claim 27 , wherein, after the micro-lens material layer is etched, the micro-lens material layer is not etched through to expose a top surface of the at least one mesa, thereby a spacer is formed on the top of the at least one mesa.
29 . The method of claim 27 , wherein the mask layer is patterned by a photolithography process firstly and then a reflowing process.