IP Library Patent Application 19195311
Patent Application
App. No. 19/195,311

IMAGE SENSOR DEVICE

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Quick Facts
Patent No.
US None
App. No.
19/195,311
Abstract

Methods of forming a back side image sensor device, as well as back side image sensor devices formed, are disclosed. In one such a method, an image sensor wafer having a first dielectric layer with a first surface is obtained. A reconstituted wafer having a processor die and a second dielectric layer with a second surface is obtained. The reconstituted wafer and the image sensor wafer are bonded to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer. In another method, such formation is for a processor die bonded to an image sensor wafer. In yet another method, such formation is for a processor die bonded to an image sensor die.

Claims (4)

1 . A method, comprising:

obtaining an image sensor wafer having a first dielectric layer with a first surface;

obtaining a reconstituted wafer having a processor die and a second dielectric layer with a second surface; and

bonding the reconstituted wafer and the image sensor wafer to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer.