STACKED DIE PACKAGE WITH ELECTRICAL SHIELDING PLATE
A semiconductor package structure includes a substrate with a substrate surface, a processing device electrically coupled to the substrate surface, one or more radio frequency integrated circuits (RFIC(s)) electrically coupled to the substrate surface, and a shield plate. The shield plate is disposed between the one or more RFIC(s) and the processing device and is configured to couple the one or more RFIC(s) to a package ground via one or more conductors. The package ground has a ground voltage associated with the semiconductor package structure.
1 . A semiconductor package structure comprising:
a substrate comprising a substrate surface;
a processing device electrically coupled to the substrate surface;
one or more radio frequency integrated circuits (RFIC(s)) electrically coupled to the substrate surface; and
a shield plate, wherein the shield plate is disposed between the one or more RFIC(s) and the processing device, and wherein the shield plate is configured to couple the one or more RFIC(s) to a package ground having a ground voltage associated with the semiconductor package structure via one or more conductors.
2 . The semiconductor package structure of claim 1 , wherein the processing device is a microcontroller unit (MCU).
3 . The semiconductor package structure of claim 1 , wherein the one or more RFIC(s) is positioned above the processing device.
4 . The semiconductor package structure of claim 1 , wherein the one or more RFIC(s) are one of a short-range wireless communication integrated circuit (IC), a low-power short-range wireless communication IC, a wireless local area network (WLAN) communication IC, a high-frequency IC, or a photonic IC.
5 . The semiconductor package structure of claim 1 , wherein the shield plate is a silicon wafer that further comprises:
a first surface coupled to the processing device via an epoxy; and
a second surface coupled to a ground plane, wherein the ground plane is one of aluminum or copper.
6 . The semiconductor package structure of claim 1 , wherein the shield plate further comprises:
an insulating layer comprising an organic material, wherein the insulating layer has a first surface and a second surface;
a first ground plane disposed on the first surface of the insulating layer;
a second ground plane disposed on the second surface of the insulating layer; and
one or more vias extending through the insulating layer and electrically coupling the first ground plane and the second ground plane, wherein the first ground plane and the second ground plane is copper.
7 . The semiconductor package structure of claim 1 , wherein a first RFIC of the one or more RFIC(s) is configured to be coplanar and adjacent to a second RFIC of the one or more RFIC(s), and wherein the first RFIC and the second RFIC are positioned above the processing device.
8 . The semiconductor package structure of claim 1 further comprising a memory device disposed between the one or more RFIC(s) and the processing device, wherein the shield plate is disposed between the memory device and the processing device, and wherein a second shield plate is disposed between the memory device and the one or more RFIC(s).
9 . The semiconductor package structure of claim 1 , wherein an antenna module is disposed on the one or more RFIC(s), and wherein there is no shield plate between the one or more RFIC(s) and the antenna module.
10 . The semiconductor package structure of claim 1 , wherein the shield plate is configured to:
couple to the package ground of the semiconductor package structure via one or more first wire bonds; and
couple to the one or more RFIC(s) via one or more second wire bonds, wherein the shield plate is configured to electrically couple the one or more RFIC(s) and the package ground via the one or more first wire bonds and the one or more second wire bonds.
11 . A semiconductor package structure comprising:
a dual-sided substrate comprising a first surface and a second surface;
a processing device electrically coupled to the first surface of the substrate;
one or more RFIC(s) electrically coupled to the second surface of the substrate positioned below the processing device; and
a shield plate, wherein the shield plate is disposed between the one or more RFIC(s) and the processing device, and wherein the shield plate is configured to couple the one or more RFIC(s) to a ground voltage associated with the semiconductor package structure via one or more conductors.
12 . The semiconductor package structure of claim 11 , wherein the one or more RFIC(s) are one of a short-range wireless communication IC, a low-power short-range wireless communication IC, a wireless local area network (WLAN) communication IC, a high-frequency IC, or a photonic IC.
13 . The semiconductor package structure of claim 11 , wherein the shield plate is integral to the dual-sided substrate.
14 . The semiconductor package structure of claim 11 , wherein a first RFIC of the one or more RFIC(s) is configured to be coplanar and adjacent to a second RFIC of the one or more RFIC(s).
15 . The semiconductor package structure of claim 11 , wherein a first RFIC of the one or more RFIC(s) is configured to be disposed above a second RFIC of the one or more RFIC(s).
16 . A method of manufacturing a semiconductor package structure comprising:
providing a substrate having a first surface and a second surface, wherein the substrate comprises a plurality of conductive traces for electrical routing;
applying, on the first surface of the substrate, a first die attach layer;
disposing a first side of a first IC on the first die attach layer, wherein the first IC has a first set of electrical contacts;
electrically connecting the first set of electrical contacts of the first IC to the substrate;
applying, on a second side of the first IC, a second die attach layer configured to cover one or more wire bonds of the first IC;
disposing, on the second die attach layer, a first side of a shield plate;
electrically connecting the shield plate to the substrate;
applying, on a second side of the shield plate, a third die attach layer;
disposing a first side of a second IC on the third die attach layer, wherein the second IC has a second set of electrical contacts; and
electrically connecting the second set of electrical contacts of the second IC to the substrate and to the shield plate.
17 . The method of claim 16 , wherein the first IC is an MCU.
18 . The method of claim 16 , wherein the second IC is one or more RFIC(s).
19 . The method of claim 18 , wherein a first RFIC of the one or more RFIC(s) is configured to be coplanar and adjacent to a second RFIC of the one or more RFIC(s), and wherein the first RFIC and the second RFIC are positioned above the first IC.
20 . The method of claim 16 , wherein the shield plate further comprises:
an insulating layer comprising an organic material, wherein the insulating layer has a first surface and a second surface;
a first ground plane disposed on the first surface of the insulating layer;
a second ground plane disposed on the second surface of the insulating layer; and
one or more vias extending through the insulating layer and electrically coupling the first ground plane and the second ground plane, wherein the first ground plane and the second ground plane is copper.