IP Library › Patent Application 19195788
Patent Application
App. No. 19/195,788

APPARATUS AND METHOD FOR GROWTH OF GADOLINIUM GALLIUM GARNET CRYSTAL

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Patent No.
US None
App. No.
19/195,788
Abstract

A gadolinium gallium garnet single crystal and method of forming said crystal is disclosed. The single gadolinium gallium garnet crystal can have a diameter of greater than 102 mm and a density of dislocations of less than 1 cm −2 in a central 80% of the crystal.

Claims (24)

1 . A gadolinium gallium garnet single crystal, comprising:

a single gadolinium gallium garnet crystal having a diameter greater than 102 mm and a density of dislocations of less than 1 cm −2 in a central 80% of the crystal.

2 . The gadolinium gallium garnet crystal of claim 1 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 105 mm.

3 . The gadolinium gallium garnet crystal of claim 1 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 115 mm.

4 . The gadolinium gallium garnet crystal of claim 1 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 120 mm.

5 . The gadolinium gallium garnet crystal of claim 1 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 150 mm.

6 . The gadolinium gallium garnet crystal of claim 1 , wherein the diameter of the gadolinium gallium garnet based single crystal is not greater than 1000 mm.

7 . The gadolinium gallium garnet crystal of claim 1 , wherein the gadolinium gallium garnet crystal has a density of dislocation of less than 0.5 dislocation/cm −2 in the central 80% of the crystal.

8 . A method of growing a gadolinium gallium garnet crystal, comprising:

bringing a seed crystal in contact with a gadolinium gallium garnet base melt;

pulling the seed crystal to grow the gadolinium gallium garnet based single crystal; and

cooling the gadolinium gallium garnet based single crystal after it has reached a diameter that is greater than 102 mm, wherein the gadolinium gallium garnet based single crystal has a density of dislocations of less than 1 cm −2 in a central 80% of the crystal.

9 . The method of claim 8 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 105 mm.

10 . The method of claim 8 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 115 mm.

11 . The method of claim 8 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 120 mm.

12 . The method of claim 8 , wherein the diameter of the gadolinium gallium garnet based single crystal is greater than 150 mm.

13 . The method of claim 8 , wherein the diameter of the gadolinium gallium garnet based single crystal is not greater than 1000 mm.

14 . The method of claim 8 , wherein the crystal was grown using a Czochralski method.

15 . The method of claim 8 , wherein cooling is carried out at a rate not greater than about 300° C./hr.

16 . The method of claim 8 , wherein cooling is carried out at a rate not greater than about 200° C./hr.

17 . The method of claim 8 , wherein cooling is carried out at a rate not greater than about 150° C./hr.

18 . The method of claim 8 , wherein cooling is carried out at a rate not greater than about 100° C./hr.

19 . The method of claim 8 , wherein cooling is carried out at a rate not greater than about 50° C./hr.

20 . The method of claim 8 , wherein the gadolinium gallium garnet base melt is within a crucible, wherein the crucible comprises iridium.

Assignments (1)
INTELLECTUAL PROPERTY SECURITY AGREEMENT SUPPLEMENT Recorded May 8, 2026
From: LUXIUM SOLUTIONS, LLC
To: GOLUB CAPITAL MARKETS LLC, AS COLLATERAL AGENT
Reel/Frame 075574/0443 →