SUBSTRATE ALIGNMENT SYSTEMS AND RELATED METHODS
Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.
1 . A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising an alignment feature on a first side of the wafer, a metal layer coupled to a second side of the wafer, a patterned metal layer directly coupled to the first side of the wafer, and a passivation layer directly coupled to the first side of the wafer and also coupled over the patterned metal layer;
aligning the wafer using an alignment tool focused on the first side of the wafer using the alignment feature; and
creating a plurality of alignment marks in the metal layer through one of lasering, sawing, or scribing;
wherein the plurality of alignment marks extend only partially into the metal layer.
2 . The method of claim 1 , wherein scribing further comprises using a scribe tool or a stylus.
3 . The method of claim 1 , further comprising:
forming a groove in the metal layer coupled to the second side of the wafer using one of lasering, sawing or scribing; and
singulating the wafer using one of lasering or sawing.
4 . The method of claim 3 , wherein the metal layer comprises a thickness of 1 micron in the plurality of alignment marks after grooving.
5 . The method of claim 3 , wherein grooving comprises using a laser and singulating comprises using the laser.
6 . The method of claim 3 , wherein grooving comprises using a laser and singulating comprises using a saw.
7 . The method of claim 3 , wherein the groove is formed only partially through the metal layer.
8 . The method of claim 1 , wherein the alignment tool is one of an infrared camera or a visible light camera.
9 . A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising an alignment feature in a die street on a first side of the wafer between a plurality of active areas, a metal layer on a second side of the wafer, a patterned metal layer directly coupled to the first side of the wafer, and a passivation layer directly coupled to the first side of the wafer and also coupled over the patterned metal layer;
aligning the wafer using a camera and the alignment feature;
creating a plurality of alignment marks in the metal layer through one of lasering, sawing, or scribing; and
thinning the metal layer to a thickness in the plurality of alignment marks.
10 . The method of claim 9 , singulating the wafer into a plurality of die with one of a laser, a saw, or a cutting tool.
11 . The method of claim 9 , wherein the metal layer comprises copper.
12 . The method of claim 9 , wherein scribing further comprises using a scribe tool or a stylus.
13 . The method of claim 12 , wherein the second thickness is 1 micron in the plurality of alignment marks after thinning.
14 . The method of claim 9 , wherein the camera is an infrared camera or a visible light camera.
15 . A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising a first side and a second side, wherein the first side comprises a plurality of die and one or more die streets between each of the plurality of die, a metal layer is coupled to the second side, a patterned metal layer is directly coupled to the first side, and a passivation layer is directly coupled to the first side and over the patterned metal layer;
aligning the wafer using a plurality of alignment features in two or more of the one or more die streets with an alignment camera;
creating one or more alignment marks in the metal layer through lasering, sawing, or scribing, wherein the one or more alignment marks correspond with the one or more of the plurality of alignment features;
grooving the one or more alignment marks with one of lasering, sawing or scribing; and
singulating the plurality of die by cutting the wafer with one of lasering, sawing or scribing.
16 . The method of claim 15 , wherein the metal layer is copper.
17 . The method of claim 15 , wherein the metal layer comprises a thickness of 1 micron in a groove.
18 . The method of claim 15 , wherein scribing further comprises one of using a scribe tool or a stylus.
19 . The method of claim 15 , wherein the one or more alignment marks extend only partially into the metal layer.
20 . The method of claim 15 , wherein a second patterned metal layer is coupled over the patterned metal layer and between openings within the passivation layer.