APPARATUS AND METHOD FOR GROWTH OF GALLIUM OXIDE CRYSTAL WITH AN OFFCUT
Apparatuses and methods as described herein can be used to grow a Ga 2 O 3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane that is rotated from a (001) plane crystallographic orientation. In one embodiment, the rotation is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
1 . A Ga 2 O 3 single crystal, comprising:
a single gallium oxide crystal whose principle plane is rotated from a (001) plane crystallographic orientation, wherein the single crystal has a full width half mass (FWHM) of less than 50 arcsec.
2 . The Ga 2 O 3 crystal of claim 1 , wherein the FWHM is measured parallel to a pull direction.
3 . The Ga 2 O 3 crystal of claim 1 , wherein the FWHM is measured perpendicular to the pull direction.
4 . The Ga 2 O 3 crystal of claim 1 , wherein a grown in miss-cut is greater than 2 degrees.
5 . The Ga 2 O 3 crystal of claim 4 , wherein the grown in miss-cut is less than 20 degrees.
6 . The Ga 2 O 3 crystal of claim 1 , wherein the length of the Ga 2 O 3 based single crystal is greater than 42 mm and not greater than 1000 mm.
7 . The Ga 2 O 3 crystal of claim 6 , wherein the Ga 2 O 3 based single crystal has a width that is greater than 25 mm and less than 140 mm.
8 . The Ga 2 O 3 crystal of claim 6 , wherein the Ga 2 O 3 based single crystal has a thickness of not less than about 0.2 mm and not greater than 25 mm.
9 . The Ga 2 O 3 crystal of claim 6 , wherein the single gallium oxide crystal further comprises a dopant, the dopant comprising a material selected from the group consisting of Sc, Sn, In, Zr, Cr, Ce, Mn, Fe, Cu, Ag, Zn, Cd, Al, Si, Mg, Ge, and Nb.
10 . A method of growing a Ga 2 O 3 based single crystal using an Edge-defined film fed growth (EFG) method, comprising:
bringing a seed crystal having a (001) crystallographic orientation in contact with a Ga 2 O 3 base melt, wherein a growth face is parallel to the base melt;
rotate a shaft clockwise or counterclockwise by a degree of rotation, wherein the degree of rotation is greater than 2 degrees and less than 20 degrees;
pulling the seed crystal to grow the Ga 2 O 3 based single crystal, wherein the Ga 2 O 3 based single crystal has a (001) crystallographic orientation as it is being grown; and
cooling the β-Ga 2 O 3 based single crystal after it has reached a length that is greater than 40 mm.
11 . The method of claim 10 , wherein the length of the Ga 2 O 3 based single crystal is not greater than 1000 mm.
12 . The method of claim 11 , wherein the length of the Ga 2 O 3 based single crystal is greater than 46 mm.
13 . The method of claim 12 , wherein the length of the Ga 2 O 3 based single crystal is less than 800 mm.
14 . The method of claim 10 , wherein the Ga 2 O 3 based single crystal has a width that is greater than 25 mm.
15 . The method of claim 14 , wherein the width of the β-Ga 2 O 3 based single crystal is less than 153 mm.
16 . The method of claim 10 , wherein the Ga 2 O 3 based single crystal has a thickness of not less than about 0.2 mm.
17 . The method of claim 16 , wherein the β-Ga 2 O 3 based single crystal has a thickness of not greater than 25 mm.
18 . The method of claim 10 , further comprising adding a dopant to the Ga 2 O 3 base melt.
19 . The method of claim 18 , wherein the dopant comprises a material selected from the group consisting of Sc, Sn, In, Zr, Cr, Ce, Mn, Fe, Cu, Ag, Zn, Cd, Al, Si, Mg, Ge, and Nb.
20 . The method of claim 19 , wherein the crystal has a dopant distribution that is about the same at a top of the crystal as a bottom of the crystal.