SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.
1 - 86 . (canceled)
87 . A method of making a source material for use in a vapor deposition apparatus to grow an SiC boule, the method comprising:
a) mixing SiC granules with a binder to form a slurry;
b) pressing the slurry into a volumetric shaped preform; and,
c) heating the volumetric shaped preform to provide a source material for use in a vapor deposition apparatus to grow an SiC boule; and,
d) wherein the source material has an internal porosity.
88 . The method of claim 87 , further comprising breaking apart a friable mass of SiC to provide the SiC granules.
89 . The method of claim 87 , comprising about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm.
90 . The method of claim 88 , comprising about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm.
91 . The method of claim 87 , wherein the source material comprises a top, a bottom and a side; the source material having a void formed in one or more of the top, the bottom and the side; wherein the void defines an opening.
92 . The method of claim 87 , wherein the source material has an elastic modulus of about 100 kPa to about 100 MPa.
93 . The method of claim 87 , wherein the source material has a hardness of about 100 Kg/mm 2 to about 2,000 Kg/mm 2 .
94 . The method of claim 87 , wherein the source material has an elastic modulus of greater than 500 kPa and a hardness of greater than 10 Kg/mm 2 .
95 . The method of claim 87 , wherein the source material has an elastic modulus of greater than 100 kPa and a hardness of greater than 100 Kg/mm 2 .
96 . The method of claim 87 , wherein the heating of step c) comprises a curing step, a pyrolysis step, or both a curing step and a pyrolysis step.
97 . The method of any claim 87 , wherein the heating of step c) comprises a curing step; and wherein the curing step comprising heating the preform to a temperature of from about 75° C. to about 125° C.
98 . The method of any of claim 87 , wherein the heating of step c) comprises a pyrolysis step; and wherein the pyrolysis step comprises heating the preform to a temperature of from about 900° C. to about 2,550° C.
99 . The method of any of claim 98 , wherein the heating of step c) comprises heating the under a pressure of 30,000 psi.
100 . The method of any of claim 87 , wherein the slurry comprises about 0.1% to about 65% binder by weight.
101 . The method of any of claim 87 , wherein the slurry comprises about 20% to about 40% binder by weight.
102 . The method of any of claim 87 , wherein the volumetric shaped preform has a top, a bottom and a side; and wherein the volumetric shaped preform has a void formed in one or more of the top, the bottom and the side; wherein the void defines an opening having a cross section of at least ¼ inches (6.35 mm).
103 . A method of making a source material for use in a vapor deposition apparatus to grow an SiC boule, the method comprising:
a) mixing SiC granules with a binder comprising SiOC to form a slurry;
b) pressing the slurry into a volumetric shaped preform; and,
c) heating the volumetric shaped preform to provide a source material for use in a vapor deposition apparatus to grow an SiC boule; whereby the SiOC binder is converted to SiC; and,
d) wherein the source material has an internal porosity, whereby the source material has an apparent density of from 1.5 g/cc to 3.0 g/cc.
104 . The method of claim 103 , wherein the source material has a compressive strength of about 10 MPa to 3.5 GPa.
105 . The method of claim 103 , wherein the source material has an elastic modulus of 50 KPa to 300 GPa.
106 . A method of making a source material for use in a vapor deposition apparatus to grow an SiC boule, the method comprising:
a) mixing 100 g to about 12,000 g of SiC granules with a liquid binder to form a slurry; wherein the slurry comprises 0.1% to about 65% binder by weight;
b) pressing the slurry into a volumetric shaped preform; and,
c) heating the volumetric shaped preform at a temperature of from about 900° C. to about 2,550° C. to provide a source material, wherein the source material has a structural integrity defined in part by a compressive strength of about 10 MPa to 3.5 GPa.; and,
d) wherein the source material has an internal porosity, whereby the volumetric shape has an apparent density of from 1.5 g/cc to 2.8 g/cc.