IP Library Patent Application 19309048
Patent Application
App. No. 19/309,048

APPARATUS AND METHODS OF ELECTRICALLY CONDUCTIVE OPTICAL SEMICONDUCTOR COATING

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Quick Facts
Patent No.
US None
App. No.
19/309,048
Abstract

A method of coating an optical substrate with a transparent, electrically conductive coating includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. A doped semiconductor is applied in a pattern over the semiconductor coating. The doped semiconductor in the pattern is activated for electrical conductivity in the doped semiconductor.

Claims (16)

1 . A window comprising:

a transparent substrate with a coating over the transparent substrate, the coating being made of both a transparent semiconductor and an electrically conductive semiconductor, the electrically conductive semiconductor being distributed in a pattern in the transparent semiconductor.

2 . The window as recited in claim 1 , wherein the semiconductor coating has broadband optical transmittance.

3 . The window as recited in claim 1 , wherein the pattern includes a grid.

4 . The window as recited in claim 1 , further comprising a protective coating over the semiconductor coating and doped semiconductor.

5 . The window as recited in claim 4 , further comprising a broadband anti-reflection coating over the protective coating.

6 . The window as recited in claim 1 , further comprising a broadband anti-reflection coating over the semiconductor coating and doped semiconductor.

7 . The window as recited in claim 1 , wherein the semiconductor coating includes at least one of In 2 O 3 or ZnO.

8 . The window as recited in claim 1 , wherein the electrically conductive semiconductor include doping portions of the semiconductor coating forming a pattern of doped semiconductor in the semiconductor coating

9 . The window as recited in claim 8 , wherein the doped semiconductor includes at least one of Sn, Mo, W, Ti, Al, or Ga.

10 . The method as recited in claim 1 , wherein the semiconductor coating has broadband optical transmittance in at least visible and infrared spectra.

11 . The window as recited in claim 1 , wherein a surface of the semiconductor coating is covered in its entirety with the pattern.

12 . The window as recited in claim 1 , wherein the activated doped semiconductor, semiconductor coating, and optical substrate are formed into a window without etching.

13 . The window as recited in claim 1 , wherein the activated doped semiconductor, semiconductor coating, and optical substrate are formed into a window without polishing or post-process planarization.

14 . The window as recited in claim 1 , wherein the activated doped semiconductor and semiconductor coating have closely matched indices of refraction to mitigate light scattering.

15 . The window as recited in claim 1 , wherein the pattern is configured to provide electromagnetic interference (EMI) shielding to the optical substrate.

Assignments (3)
SECURITY INTEREST Recorded May 26, 2026
From: DANBURY MISSION TECHNOLOGIES, LLC
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 074760/0870 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2026
From: GOODRICH CORPORATION; RAYTHEON TECHNOLOGIES CORPORATION
To: DANBURY MISSION TECHNOLOGIES, LLC (FORMERLY KNOWN AS AMERGINT EO SOLUTIONS, LLC)
Reel/Frame 075305/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2026
From: SCHWARTZ, BRADLEY DEAN
To: GOODRICH CORPORATION
Reel/Frame 075265/0340 →