Nitrogenating of Topological Semi-Metal Films to Increase Resistivity
The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: Ta x W 1-x , where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, Ta x W 1-x N, HfN, and Ta x Hf 1-x N, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, Ta x W 1-x N, HfN, and Ta x Hf 1-x N, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.
1 . A spintronic stack, comprising:
an amorphous layer;
a buffer layer comprising one or more materials selected from the group consisting of: MgO, Ru, Ti, YPt, CrMo, N, HfN, Ti, TiN, B2 alloys of X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, Ta x Hf 1-x N, Ta x W 1-x , and Ta x W 1-x , where x is from zero to 1;
a topological semi-metal (TSM) layer comprising YPtBi having a (110), (100), or (111) orientation;
an interlayer; and
a ferromagnetic layer.
2 . The spintronic stack of claim 1 , wherein the TSM layer has a (110) orientation.
3 . The spintronic stack of claim 1 , wherein each of the amorphous layer, the buffer layer, the TSM layer, the interlayer, and the ferromagnetic layer comprises nitrogen.
4 . The spintronic stack of claim 1 , wherein the ferromagnetic layer is disposed between the amorphous layer and the TSM layer.
5 . The spintronic stack of claim 1 , further comprising a cap layer, wherein the ferromagnetic layer is disposed between the cap layer and the TSM layer.
6 . The spintronic stack of claim 1 , wherein the buffer layer comprises a texturing layer and a barrier layer.
7 . The spintronic stack of claim 1 , wherein the amorphous layer comprises CoFeTaN, and wherein the interlayer comprises one or more materials selected from the group consisting of: GeN, HfN, YPtBiN, and TiN.
8 . A memory cell comprising the spintronic stack of claim 1 .
9 . A logic cell comprising the spintronic stack of claim 1 .
10 . A magnetic sensor comprising the spintronic stack of claim 1 .
11 . A magnetic recording device comprising the spintronic stack of claim 1 .
12 . A spintronic stack, comprising:
an amorphous layer;
a buffer layer disposed on the amorphous layer, the buffer layer comprising:
a texturing layer comprising one or more materials selected from the group consisting of: MgO, Ru, Ti, TiN, YPt, CrMo, HfN, B2 alloys of X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, Ta x W 1-x N, Ta x Hf 1-x N, and Ta x W 1-x , where x is from zero to 1; and
a barrier layer comprising one or more materials selected from the group consisting of: HfN, TiN, X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, Rh, or Ir, Ta x W 1-x N, and Ta x Hf 1-x N, where x is between 0 and 1;
a topological semi-metal (TSM) layer comprising YPtBi having a (110), (100), or (111) orientation;
an interlayer disposed on the TI layer; and
a ferromagnetic layer disposed on the interlayer.
13 . The spintronic stack of claim 12 , wherein the amorphous layer comprises CoFeTaN, wherein the ferromagnetic layer comprises CoFeN, CoFeBN, or CoFeNiN, and wherein the interlayer comprises one or more materials selected from the group consisting of: GeN, HfN, YPtBiN, and TiN.
14 . The spintronic stack of claim 12 , wherein each of the amorphous layer, the buffer layer, the TSM layer, the interlayer, and the ferromagnetic layer comprises nitrogen.
15 . The spintronic stack of claim 12 , wherein each of the buffer layer and the TSM layer are crystalline.
16 . A memory cell comprising the spintronic stack of claim 12 .
17 . A logic cell comprising the spintronic stack of claim 12 .
18 . A magnetic sensor comprising the spintronic stack of claim 12 .
19 . A magnetic recording device comprising the spintronic stack of claim 12 .
20 . A spintronic stack, comprising:
an amorphous layer;
a texturing layer disposed on the amorphous layer, the texturing layer comprising one or more materials selected from the group consisting of: MgO, Ru, Ti, TiN, YPt, CrMo, HfN, B2 alloys of X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, Ta x W 1-x N, Ta x Hf 1-x N, and Ta x W 1-x , where x is from zero to 1;
a ferromagnetic layer disposed on the texturing layer;
an interlayer disposed on the ferromagnetic layer;
a topological semi-metal (TSM) layer comprising YPtBi having a (110), (100), or (111) orientation; and
a barrier layer disposed on the TI layer, the barrier layer comprising one or more materials selected from the group consisting of: HfN, TiN, X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, Rh, or Ir, Ta x W 1-x N, and Ta x Hf 1-x N, where x is between 0 and 1.
21 . The spintronic stack of claim 20 , wherein each of the amorphous layer, the barrier layer, the TSM layer, the interlayer, and the ferromagnetic layer comprises nitrogen.
22 . The spintronic stack of claim 20 , wherein the ferromagnetic layer comprises CoFeN, CoFeBN, or CoFeNiN.
23 . The spintronic stack of claim 20 , wherein the TSM layer comprises YPtBiN having a (110) orientation.
24 . A memory cell comprising the spintronic stack of claim 20 .
25 . A logic cell comprising the spintronic stack of claim 20 .
26 . A magnetic sensor comprising the spintronic stack of claim 20 .
27 . A magnetic recording device comprising the spintronic stack of claim 20 .